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Fabrication of narrow pulse passively Q-switched self-stimulated Raman laser with c-cut Nd:GdVO_4 被引量:1
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作者 申高 李祚涵 韩鸣 《Optoelectronics Letters》 EI 2016年第6期430-432,共3页
Combining the self-stimulated Raman scattering technology and saturable absorber of Cr^(4+):YAG, a 1.17 μm c-cut Nd:GdVO_4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 ... Combining the self-stimulated Raman scattering technology and saturable absorber of Cr^(4+):YAG, a 1.17 μm c-cut Nd:GdVO_4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB_3O_5 frequency doubling crystal. 展开更多
关键词 switched repetition absorber yellow doubling Stokes coated stimulated mirror narrow
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