In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field...In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.展开更多
With high effective screen-printing technique, a new triode field emission display (FED)with enhanced petaling cold cathode was fabricated. For enhancing the field emission performance,a series of improved measures wa...With high effective screen-printing technique, a new triode field emission display (FED)with enhanced petaling cold cathode was fabricated. For enhancing the field emission performance,a series of improved measures was adopted in the fabrication course. Seen from the fabrication structure of enhanced petaling cold cathode,the bar conducting electrode and the petaling bottom electrode were fabricated with the sintered silver slurry on cathode glass faceplate. The luminescence image with green phosphor was displayed for the sealed enhanced petaling cold cathode FED. The measured results showed that the enhanced petaling cold cathode had good field emission performance. The enhanced petaling cold cathode FED possessed low turn-on electric-field of 1. 95 V /μm,large emission current of 1 389. 6 μA,and high luminance brightness of 1 520 cd /m2 .展开更多
The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are pre...The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.展开更多
碳纳米管是一种性能优良的场发射冷阴极材料,具有低的阈值电场和高的发射电流密度,在平板显示领域具有广阔的应用前景。本文从Fow ler-Nordhe im s场发射理论出发,阐述了CNT的场发射机制,详细论述了包括CNT的结构、方向性、阵列密度、...碳纳米管是一种性能优良的场发射冷阴极材料,具有低的阈值电场和高的发射电流密度,在平板显示领域具有广阔的应用前景。本文从Fow ler-Nordhe im s场发射理论出发,阐述了CNT的场发射机制,详细论述了包括CNT的结构、方向性、阵列密度、吸附气体、工作环境等诸多因素对其场发射特性的影响。研究表明,垂直取向,长径比高,密度适中,表面洁净的CNT场增强因子较大,场发射性能较好。展开更多
基金Project supported by the National Basic Research Program of China(Grant No.2013CB933603)the National Natural Science Foundation of China(Grant Nos.U1134006 and 61101041)
文摘In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.
基金National Natural Science Foundations of China(No.60976058,No.61274078)Natural Science Research Project of Henan Province Education Department,China(No.2009B510019)
文摘With high effective screen-printing technique, a new triode field emission display (FED)with enhanced petaling cold cathode was fabricated. For enhancing the field emission performance,a series of improved measures was adopted in the fabrication course. Seen from the fabrication structure of enhanced petaling cold cathode,the bar conducting electrode and the petaling bottom electrode were fabricated with the sintered silver slurry on cathode glass faceplate. The luminescence image with green phosphor was displayed for the sealed enhanced petaling cold cathode FED. The measured results showed that the enhanced petaling cold cathode had good field emission performance. The enhanced petaling cold cathode FED possessed low turn-on electric-field of 1. 95 V /μm,large emission current of 1 389. 6 μA,and high luminance brightness of 1 520 cd /m2 .
基金supported by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126)the Open Project of the Key Laboratory of Nano-devices and Applications,China(Grant No.13ZS04)the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017)
文摘The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
基金The National Natural Science Foundation of China(Nos.51072184,60976058,61274078)the Natural Science Research Project of Henan Province Education Department(No.2009B510019)
文摘碳纳米管是一种性能优良的场发射冷阴极材料,具有低的阈值电场和高的发射电流密度,在平板显示领域具有广阔的应用前景。本文从Fow ler-Nordhe im s场发射理论出发,阐述了CNT的场发射机制,详细论述了包括CNT的结构、方向性、阵列密度、吸附气体、工作环境等诸多因素对其场发射特性的影响。研究表明,垂直取向,长径比高,密度适中,表面洁净的CNT场增强因子较大,场发射性能较好。
