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Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors
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作者 MENGXiangti KANGAiguo +5 位作者 ZHANGXimin LIJihong HUANGQiang LIFengmei LIUXiaoguang ZHOUHongyu 《Rare Metals》 SCIE EI CAS CSCD 2004年第2期165-170,共6页
Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have be... Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper. 展开更多
关键词 semiconductor technology irradiation damage electron and gamma irradiation color cmos image sensor output characteristic SI
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