Molecular dynamics simulation study of nitrogen vacancy color centers prepared by carbon ion implantation into diamond

Nitrogen vacancy(NV)color centers in diamond have useful applications in quantum sensing andfluorescent marking.They can be gen-erated experimentally by ion implantation,femtosecond lasers,and chemical vapor deposition.However,there is a lack of studies of the yield of NV color centers at the atomic scale.In the molecular dynamics simulations described in this paper,NV color centers are pre-pared by ion implantation in diamond with pre-doped nitrogen and subsequent annealing.The differences between the yields of NV color centers produced by implantation of carbon(C)and nitrogen(N)ions,respectively,are investigated.It is found that C-ion implantation gives a greater yield of NV color centers and superior location accuracy.The effects of different pre-doping concentrations(400–1500 ppm)and implantation energies(1.0–3.0 keV)on the NV color center yield are analyzed,and it is shown that a pre-doping concentra-tion of 1000 ppm with 2 keV C-ion implantation can produce a 13%yield of NV color centers after 1600 K annealing for 7.4 ns.Finally,a brief comparison of the NV color center identification methods is presented,and it is found that the error rate of an analysis utiliz-ing the identify diamond structure coordination analysis method is reduced by about 7%compared with conventional identification+methods.

Effect of radiation-induced color centers absorption in optical fibers on fiber optic gyroscope for space application

The effects of color centers＇ absorption on fibers and interferometric fiber optical gyroscopes（IFOGs） are studied in the paper. The irradiation induced attenuation（RIA） spectra of three types of polarization-maintaining fibers（PMFs）, i.e.,P-doped, Ge-doped, and pure silica, irradiated at 100 Gy and 1000 Gy are measured in a wavelength range from 1100 nm to1600 nm and decomposed according to the Gaussian model. The relationship of the color centers absorption intensity with radiation dose is investigated based on a power model. Furthermore, the effects of all color centers＇ absorption on RIA and mean wavelength shifts（MWS） at 1300 nm and 1550 nm are discussed respectively. Finally, the random walk coefficient（RWC） degradation induced from RIA and the scale factor error induced by MWS of the IFOG are simulated and tested at a wavelength of 1300 nm. This research will contribute to the applications of the fibers in radiation environments.

Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond

Crystallization of diamond with different nitrogen concentrations was carried out with a FeNiCo-C system at pressure of 6.5 GPa.As the nitrogen concentration in diamond increased,the color of the synthesized diamond crystals changed from colorless to yellow and finally to atrovirens(a dark green).All the Raman peaks for the obtained crystals were located at about 1330 cm^(-1)and contained only the sp^(3)hybrid diamond phase.Based on Fourier transform infrared results,the nitrogen concentration of the colorless diamond was<1 ppm and absorption peaks corresponding to nitrogen impurities were not detected.However,the C-center nitrogen concentration of the atrovirens diamond reached 1030 ppm and the value of A-center nitrogen was approximately 180 ppm with a characteristic absorption peak at 1282 cm^(-1).Furthermore,neither the NV^(0)nor the NV^(-)optical color center existed in diamond crystal with nitrogen impurities of less than 1 ppm by photoluminescence measurement.However,Ni-related centers located at 695 nm and 793.6 nm were observed in colorless diamond.The NE8 color center at 793.6 nm has more potential for application than the common NV centers.NV^(0)and NV^(-)optical color centers coexist in diamond without any additives in the synthesis system.Importantly,only the NV^(-)color center was noticed in diamond with a higher nitrogen concentration,which maximized optimization of the NV^(-)/NV^(0)ratio in the diamond structure.This study has provided a new way to prepare diamond containing only NV^(-)optical color centers.

Single‑Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

Point defects in the crystal lattice of SiC,known as color centers,have recently emerged as one of the most promising single-photon emitters for non-classical light sources.However,the search for the best color center that satisfies all the requirements of practical applications has only just begun.Many color centers in SiC have been recently discovered but not yet identified.Therefore,it is extremely challenging to understand their optoelectronic properties and evaluate their potential for use in practical single-photon sources.Here,we present a theoretical approach that explains the experiments on single-photon electroluminescence(SPEL)of novel color centers in SiC p-i-n diodes and gives the possibility to engineer highly efficient single-photon emitting diodes based on them.Moreover,we develop a novel method of determining the electron and hole capture cross sections by the color center from experimental measurements of the SPEL rate and second-order coherence.Unlike other methods,the developed approach uses the experimental results at the single defect level that can be easily obtained as soon as a single-color center is identified in the i-type region of the SiC p-i-n diode.

Solid-state quantum nodes based on color centers and rare-earth ions coupled with fiber FabryePérot microcavities

High-performance optical quantum memories serving as quantum nodes are crucial for the distribution of remote entanglement and the construction of large-scale quantum networks.Notably,quantum systems based on single emitters can achieve deterministic spin–photon entanglement,which greatly simplifies the difficulty of constructing quantum network nodes.Among them,optically interfaced spins embedded in solid-state systems,as atomic-like emitters,are important candidate systems for implementing long-lived quantum memory due to their stable physical properties and robustness to decoherence in scalable and compact hardware.To enhance the strength of light-matter interactions,optical microcavities can be exploited as an important tool to generate high-quality spin–photon entanglement for scalable quantum networks.They can enhance the photon collection probability and photon generation rate of specific optical transitions and improve the coherence and spectral purity of emitted photons.For solid-state systems,open Fabry–Pérot cavities can couple single emitters that are not in proximity to the surface,avoiding significant spectral diffusion induced by the interfaces while maintaining the wide tunability,which enables addressing of multiple single emitters in the frequency and spatial domain within a single device.This review described the characteristics of single emitters as quantum memories with a comparison to atomic ensembles,the cavity-enhancement effect for single emitters and the advantages of different cavities,especially fiber Fabry–Pérot microcavities.Finally,recent experimental progress on solid-state single emitters coupled with fiber Fabry–Pérot microcavities was also reviewed,with a focus on color centers in diamond and silicon carbide,as well as rare-earth dopants.

Transient features of graphitization and nitrogen-vacancy color centers in a diamond fabricated by localization femtosecond laser direct writing

Femtosecond laser direct writing provides an efficient approach to fabricating single nitrogen vacancy(NV) color centers with a relatively high yield. Different from previously reported NV color centers with a random distribution in a bulk diamond or nanocrystals, this gives an opportunity to study the photophysical properties of single NV color centers with precise numbers and positions. However, ultrafast studies on single NV color centers prepared by localization femtosecond laser direct writing are still rare, especially for the graphitization inside a diamond and its relationship with single NV color centers. Here, we report the broadband transient absorption(TA) spectroscopic features of the graphitization and NV color centers in a diamond fabricated by localization femtosecond laser direct writing at room temperature under 400 nm excitation. In comparison with the graphene oxide film, the bleaching features of the graphitization point array in a diamond are similar to reduced graphene oxide,accompanied by excited state absorption signals from local carbon atom vacancy defects in graphene-like structures induced by laser writing. On the other hand, transient features of laser processing array containing single NV color centers with a yield of~50% are different from those of the graphitization point array. Our findings suggest that for ultrashort pulse processing of diamonds, broadband TA spectral signals are sensitive to the surrounding atomic environment of processing sites, which could be applied to laser writing point defects in other materials used as solid-state single photon sources.

Silicon Vacancy Color Centers in 6H-SiC Fabricated by Femtosecond Laser Direct Writing

As a single photon source,silicon vacancy(V_(Si))centers in wide bandgap semiconductor silicon carbide(SiC)are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum computing.Simultaneously,the new direct femtosecond(fs)laser writing technology has been successfully applied to preparing V_(Si)s in SiC.In this study,6H-SiC,which has been less studied,was used as the processed material.V_(Si) center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed laser.The surface was characterized by white light microscopy,atomic force microscopy,and confocal photoluminescence(PL)/Raman spectrometry.The effect of fs laser energy,vector polarization,pulse number,and repetition rate on 6H-SiC V_(Si) defect preparation was analyzed by measuring the V_(Si) PL signal at 785-nm laser excitation.The results show that fs laser energy and pulse number greatly influence the preparation of the color center,which plays a key role in optimizing the yield of V_(Si)s prepared by fs laser nanomachining.

Color centers in wide-bandgap semiconductors for subdiffraction imaging:a review

Solid-state atomic-sized color centers in wide-band-gap semiconductors,such as diamond,silicon carbide,and hexagonal boron nitride,are important platforms for quantum technologies,specifically for single-photon sources and quantum sensing.One of the emerging applications of these quantum emitters is subdiffraction imaging.This capability is provided by the specific photophysical properties of color centers,such as high dipole moments,photostability,and a variety of spectral ranges of the emitters with associated optical and microwave control of their quantum states.We review applications of color centers in traditional super-resolution microscopy and quantum imaging methods,and compare relative performance.The current state and perspectives of their applications in biomedical,chemistry,and material science imaging are outlined.

Radiation induced color centers in cerium-doped and cerium-free multicomponent silicate glasses

The effect of doped cerium on the radiation-resistance behavior of silicate glass was investigated in our work. The ultraviolet-visible absorption spectra and electron paramagnetic resonance（EPR） spectra were obtained after the cerium-rich and cerium-free multicomponent silicate glasses（K509 and K9） were irradiated by gamma rays with a dose range from 10 to 1000 kGy. The results showed that E’ center, oxygen deficient center（ODC） and non-bridging oxygen hole center（HC1 and HC2） were induced in K9 and K509 glasses after radiation. The concentrations of all color centers presented an exponential growth with the increase of the gamma dose. Moreover, the concentration of HC1 and HC2 in cerium-doped K509 glass was much lower than that in cerium-free K9 glass at the same dose of radiation, which could be attributed to the following mechanism： Ce3＋ ions capturing holes then forming Ce3＋＋ centers inhibited the formation of hole trapped color centers（HC1 and HC2） and Ce4＋ ions capturing electrons to form Ce3＋ centers suppressed the formation of electron trapped color centers like E’ center.

Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC

Color centers in silicon carbide(SiC)are promising candidates for quantum technologies.However,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging.In this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room temperature.PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping.Lattice defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,respectively.PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects.Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling.

Current sensor based on diamond nitrogen-vacancy color center

High precision current measurement is very important for the calibration of various high-precision equipment and the measurement of other precision detection fields.A new current sensor based on diamond nitrogen-vacancy(NV)color center magnetic measurement method is proposed to realize the accurate measurement of current.This new current method can greatly improve the accuracy of current measurement.Experiments show that the linearity of the current sensor based on diamond NV color center can reach up to 33 ppm,which is superior to other current sensors and solves the problem of low linearity.When the range of input current is 5-40 A,the absolute error of the calculated current is less than 51μA,and the relative error is 2.42×10^(-6) at 40 A.Combined with the research content and results of the experiment,the application of the current sensor in the field of current precision measurement is prospected.

A Laser-Diode-Pumped Nd:YAG Laser Q-Switched with a YAG Color Center Chip

A laser-diode-pumped Nd: YAG laser Q-switched Passively with a YAG colorcenter chip has been deveolped. The Q-switched pulse output has a duration of 25-70ns,an energy of about 7.9 μJ and a repetition frequency of 1.25-5.0kHz when the laser cavityparameters and pump power are changed. The Q-switched dynamics is analyzed with therate equation theorry. The theoretical and experimental results agree well.

Color center and radiation center in Lu_2SiO_5:Ce crystal

Radiation damage of Lu2SiO5：Ce （LSO：Ce） crystals was investigated through intense UV light. An absorption band at 435 nm was observed in the transmission spectrum of the damaged LSO：Ce crystal, similar to that of absorption band caused by gamma ray irradiation. GDMS analysis for LSO：Ce crystals revealed the existence of impurities, such as Yb in the crystals. The impurities might be responsible for the optical absorption of the color center and the radiation center.

Single-channel vector magnetic information detection method based on diamond NV color center

A method of detecting the single channel triaxial magnetic field information based on diamond nitrogen-vacancy(NV)color center is introduced.Firstly,the incident angle of the bias magnetic field which can achieve the equal frequency difference optically-detected magnetic resonance(ODMR)spectrum of diamond NV color center is calculated theoretically,and the triaxial magnetic information solution model is also constructed.Secondly,the microwave time-controlled circuit module is designed to generate equal timing and equal frequency difference microwave pulse signals in one channel.Combining with the optical detection magnetic resonance technology,the purpose of sequentially locking and detecting the four formant signals on one side of the diamond NV color center(m_(s)=-1 state signal)is achieved,and the vector magnetic field information detection is accomplished by combining the triaxial magnetic information solution model.The system can obtain magnetic field detection in a range of 0 mT-0.82 mT.The system's magnetic noise sensitivity is 14.2 nT/Hz^(1/2),and the deviation angle errors of magnetic field detectionθ_(x) andθ_(y) are 1.3° and 8.2° respectively.

Non-destructive Testing Method for Crack Based on Diamond Nitrogen-vacancy Color Center

Magnetic field measurement plays an extremely important role in material science,electronic en-gineering,power system and even industrial fields.In particular,magnetic field measurement provides a safe and reliable tool for industrial non-destructive testing.The sensitivity of magnetic field measurement deter-mines the highest level of detection.The diamond nitrogen-vacancy(NV)color center is a new type of quan-tum sensor developed in recent years.The external magnetic field will cause Zeeman splitting of the ground state energy level of the diamond NV color center.Optical detection magnetic resonance(ODMR),using a mi-crowave source and a lock-in amplifier to detect the resonant frequency of the NV color center,and finally the change of the resonant frequency can accurately calculate the size of the external magnetic field and the sensi-tivity of the external magnetic field change.In the experiment,a diamond containing a high concentration of NV color centers is coupled with an optical fiber to realize the preparation of a magnetic field scanning probe.Then,the surface cracks of the magnetized iron plate weld are scanned,and the scanning results are drawn into a two-dimensional magnetic force distribution map,according to the magnetic field gradient change of the magnetic force distribution map,the position and size of the crack can be judged very accurately,which pro-vides a very effective diagnostic tool for industrial safety.

Experimental investigation of vector static magnetic field detection using an NV center with a single first-shell ^(13)C nuclear spin in diamond

We perform a proof-of-principle experiment that uses a single negatively charged nitrogen–vacancy（NV） color center with a nearest neighbor ^13C nuclear spin in diamond to detect the strength and direction（including both polar and azimuth angles） of a static vector magnetic field by optical detection magnetic resonance（ODMR） technique. With the known hyperfine coupling tensor between an NV center and a nearest neighbor ^13C nuclear spin, we show that the information of static vector magnetic field could be extracted by observing the pulsed continuous wave（CW） spectrum.

Gamma-radiation effects in pure-silica-core photonic crystal fiber

We investigated the steady state gamma-ray radiation response of pure-silica-core photonic crystal fibers（PSC-PCFs）under an accumulated dose of 500 Gy and a dose rate of 2.38 Gy/min. The radiation-induced attenuation（RIA） spectra in the near-infrared region from 800 nm to 1700 nm were obtained. We find that the RIA at 1550 nm is related with hydroxyl（OH^-） absorption defects in addition to the identified self-trapped hole（STH） defects. Moreover, it is proposed and demonstrated that reduced OH^-absorption defects can decrease the RIA at 1550 nm. The RIA at 1550 nm has effectively declined from 27.7 d B/km to 3.0 dB/km through fabrication improvement. Preliminary explanations based on the unique fabrication processes were given to interpret the RIA characteristics of PSC-PCFs. The results show that the PSC-PCFs,which offer great advantages over conventional fibers, are promising and applicable to fiber sensors in harsh environments.

KCl-KBr∶OH^-混合晶体中的(F_2^+)H心研究

Tunable color center lasers making use of electron trapping defects such as F A and F + 2 like centers in alkali halide crystals can deliver broadly tunable power over the near infrared 0.8—4.0μm range.The tunable range and their impressive feature of narrow linewidth make these solid state lasers important to molecular spectroscopy,pollution detection,fiber optics communication and other scientific research fields.The( F + 2) H center consisting of an F + 2 center and an neibouring O 2- ion,is one of the most important color centers.In this paper,we will study the preparation,absorption and emission spectra of the ( F + 2) H center in mixed crystal KCl KBr∶OH -. Single crystals of KCl,KBr and different compositions of KCl x Br 1-x solid solutions are growtn with 0.1mol%—0.3mol% KOH in the melt by the Czochralski technique in air.

A radiation–temperature coupling model of the optical fiber attenuation spectrum in the Ge/P co-doped fiber

A radiation–temperature coupling model of optical fiber attenuation spectrum has been developed.The spectrum in Ge/P co-doped fiber ranging from 800 nm–1600 nm at different temperatures and doses was measured and decomposed according to the configurational coordinate model based on which the power-law model was employed to predict the intensity of the color center absorption band at different doses.And the fiber loss in space was predicted by the model.This work will benefit the application of fibers in a complicated radiation environment.

Enhanced single photon emission in silicon carbide with Bull's eye cavities

The authors demonstrate a Bull's eye cavity design that is composed of circular Bragg gratings and micropillar optical cavity in 4H silicon carbide(4H-SiC) for single photon emission. Numerical calculations are used to investigate and optimize the emission rate and directionality of emission. Thanks to the optical mode resonances and Bragg reflections,the radiative decay rates of a dipole embedded in the cavity center is enhanced by 12.8 times as compared to that from a bulk 4H-SiC. In particular, a convergent angular distribution of the emission in far field is simultaneously achieved, which remarkably boost the collection efficiency. The findings of this work provide an alternative architecture to manipulate light-matter interactions for achieving high-efficient SiC single photon sources towards applications in quantum information technologies.