The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomrist...The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance.Here,by studying band structures and electron transport properties of MoS2 atomristor,a comprehensive memristive mechanism is obtained.Guided by the simulation results,monolayer MoS2 with moderated defect concentration has been fabricated in the experiment,which can build atomristors with high performance and good consistency.Based on this,for the first time,MoS2 all-atomristor logic gates are realized successfully.As a demonstration,a half-adder based on the logic gates and a binary neural network(BNN)based on crossbar arrays are evaluated,indicating the applicability in various logic computing circumstances.Owing to shorter transition time and lower energy consumption,all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.展开更多
基金This work was supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011)the National Key Research and Development Program of China(No.2016YFA0200403)+4 种基金Eu-FP7 Project(No.247644)CAS Strategy Pilot Program(No.XDA 09020300)Fundamental Research Funds for the Central Universities(No.buctrc202122)the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401)the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001).
文摘The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance.Here,by studying band structures and electron transport properties of MoS2 atomristor,a comprehensive memristive mechanism is obtained.Guided by the simulation results,monolayer MoS2 with moderated defect concentration has been fabricated in the experiment,which can build atomristors with high performance and good consistency.Based on this,for the first time,MoS2 all-atomristor logic gates are realized successfully.As a demonstration,a half-adder based on the logic gates and a binary neural network(BNN)based on crossbar arrays are evaluated,indicating the applicability in various logic computing circumstances.Owing to shorter transition time and lower energy consumption,all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.
