Fabrication of Meander and Spiral Type Micro Inductors

To obtain microstructure of magnetic devices, the thin film inductors were fabricated by the process such as thin film manufacturing, photolithography and wet etching. The frequency characteristics of these devices are measured at high frequency range. When the inductor sizes of the spiral and the meander type are same, the inductance and the quality factor of the spiral type inductor are larger than those of the meander type inductor, but the driving frequency of the spiral type inductor is lower than that of the meander type inductor.

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology has been investigated deeply. The fabricated 1-nH spiral inductor on SiC substrate demonstrates a self-resonant frequency of 51.6 GHz, with a peak Q-fact of 12.14 at 22.1 GHz. From the S-parameters measurements, the exponential decay phenomenon is observed for L, Q-factor, and SRF with the air-bridge height decreasing, and an analytic expression is concluded to exactly fit the measured data which can be used to predict the performance of the spiral inductor. All the coefficients in the formula have specific meaning. By means of establishing the lumped model, the parasitic coupling capacitance of the air-bridge has been extracted and presents the exponential decay with the air-bridge heights decreasing which indicates that this capacitor is directly related to the coupling effect of the air-bridge. Through the electromagnetic field distribution simulation, the details of the electric field around the air-bridge have been presented which demonstrate the formation and the variation principles of the coupling effect.

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor （AI）, such as the effective inductance Ls, quality factor Q, and self-resonant frequency too is analyzed based on 0.35%tm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density Jc, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and 090, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller Jc is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and 090. In addition, under the fixed collector current Ic, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ab become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

Fabrication and Performance of Novel RF Spiral Inductors on Silicon

This paper discusses fabrication and performance of novel circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure perfect contact between the seed layer and the top of pillars. Dry etching technique is used to remove the seed layer. The results show that Q-factor of the inductor is greatly improved by removing silicon underneath the inductor coil. The spiral inductor with line width of 50 μm has a peak Q-factor of 10 for the inductance of 2.5 nH at frequency of 1 GHz, and the resonance frequency of the inductor is about 8.5 GHz. For the inductor of conductor width 80 μm, the peak Q-factor increases to about 17 for inductance of 1.5 nH in the frequency range of 0.05 -3.00 GHz.

Magnetic-Particle-Composite-Medium-Filled Stacked-Spiral Inductors for Radio-Frequency CMOS Applications

Magnetic-particle-composite-medium-filled stacked-spiral inductors for rf complementary metal oxide semiconductor(CMOS)applications in GHz are demonstrated.The new inductor features a nearly closed magnetic circuit loop,an optimized high-permeability and low-loss sub-1μm magnetic particles'composite core,and a developed 0.18-μm CMOS-compatible device fabrication process.An equivalent circuit model with structural amplifying factors is proposed and modeled.The prototype of the 6-level stacked inductor with Co_(2)Z magnetic-particles-composite-medium filling increases the inductance L by 50%,and quality factor Q by 37%at frequencies as high as 1 GHz,with high inductance density as 825 nH/mm2 and a reduced size area by 80%compared to the planar spiral inductor.

Reluctance Network Analysis for Complex Coupled Inductors

The use of reluctance networks has been a conventional practice to analyze transformer structures. Basic transformer structures can be well analyzed by using the magnetic-electric analogues discovered by Heaviside in the 19th century. However, as power transformer structures are getting more complex today, it has been recognized that changing transformer structures cannot be accurately analyzed using the current reluctance network methods. This paper presents a novel method in which the magnetic reluctance network or arbitrary complexity and the surrounding electrical networks can be analyzed as a single network. The method presented provides a straightforward mapping table for systematically linking the electric lumped elements to magnetic circuit elements. The methodology is validated by analyzing several practical transformer structures. The proposed method allows the analysis of coupled inductor of any complexity, linear or non-linear.

A compact and reconfigurable low noise amplifier employing combinational active inductors and composite resistors feedback techniques

A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.

Canonic Realizations of Voltage-Controlled Floating Inductors Using CFOAs and Analog Multipliers

New voltage-controlled floating inductors employing CFOAs and an analog multiplier have been presented which have the attractive features of using a canonic number of passive components (only two resistors and a capacitor) and not requiring any component-matching conditions and design constraints for the intended type of inductance realization. The workability and applications of the new circuits have been demonstrated by SPICE simulation and hardware experimental results based upon AD844-type CFOAs and AD633-type/MPY534 type analog multipliers.

The Application of FDTD and Micro Genetic Algorithms on the Planar Spiral Inductors

High Q inductors are the important elements for RF circuit design. In this paper, the FDTD method is applied to explain the crowding effect of the spiral inductor , which can never be accurately analyzed by analytical solutions. The experimental results verify the FDTD simulation. The micro genetic algorithms and FDTD are combined to design the high Q of the inductor, the results show the efficiency of this exploration.

一种基于耦合电感的高增益软开关谐振变换器

该文提出了一种具有高增益、软开关的新型谐振变换器。该谐振变换器使用耦合电感来提高电压增益,升压比不仅取决于占空比,还取决于耦合电感的变比,具有高增益的优点。此外,由于采用了有源钳位技术,漏感中的能量可以被回收利用,用来对开关管的结电容充放电提供能量,从而实现软开关。由于采用了耦合电感,所提出的变换器可以在较低的开关管电压应力的情况下实现较高的输出电压,因此可以使用低导通电阻的低压器件,从而提升系统的效率。该文分析了该谐振变换器的工作原理,并推导了输出电压、关断电流应力等参数的解析表达式。在此基础上,从理论上分析了该变换器取得软开关的条件,并对该变换器的各个器件的电压电流应力进行分析,为器件选型提供了理论依据。最后,搭建1kW实验样机,针对该文提出的基于耦合电感的谐振变换器的高增益、软开关、低电压应力、高效率等性能进行了实验验证。通过实验得出所提出的拓扑可以在10倍增益的情况下达到最高97.5%的效率,表明所提拓扑的优越性。

基于二次型升压变换器和开关电容的混合式升压方案研究

提出一种混合式高升压比DC-DC变换器。该变换器由二次型升压变换器、开关电容和耦合电感单元集成。为了减少元件的数量,耦合电感一次侧与二次型升压变换器共用;二次型升压变换器的输出电容一分为二,并与开关电容共用。由于电源和负载之间的共地特性,则输入电流连续。对所提变换器的电压增益进行了推导,并分析其电压应力。结果表明所提逆变器具备高电压增益、低电压应力的特性。最后,搭建了80 W的实验样机,实验结果验证了所提变换器的正确性和有效性。

基于寄生电感优化的分立器件布局方法研究

为了探究分立器件与PCB组合形成的半桥电路时采用何种布局方式才能尽最大限度减小线路寄生电感的问题,基于换流回路寄生电感概念,提出了一种经优化的分立器件在PCB上的布局方式,进而减小换流回路的寄生电感,随后通过有限元仿真软件评估并验证不同布局方式所产生的寄生电感,并结合LTspice电路仿真软件评估不同布局方式对器件电开关特性的影响,最后通过双脉冲实验验证了所设计的一种经过优化布局半桥电路的优越性.所提供的半桥电路的设计方法为分立器件在PCB上的布局提供了理论和技术支撑.

一种交叉倍压型高增益DC/DC变换器

针对光伏发电、燃料电池发电等领域对高增益直流变换器的需求,以两相交错并联升压变换器为研究对象,由2个含有电感的倍压单元组合设计出实现电压提升的交叉倍压结构,据此提出了一种新颖的交叉倍压型高增益DC/DC变换器。该变换器可实现(3n+4)/(1-d)倍的高电压增益(1∶n为耦合电感匝数比,d为变换器占空比),且具有电路器件的低电压应力特性。对于漏感引起的开关管电压尖峰问题,引入了钳位电容构成释放漏感能量通道,同时提升了输出电压。介绍了新型交叉倍压型高增益变换器的拓扑结构,分析了变换器各模态的工作过程,推导了电压增益、输入电流纹波及各器件电压应力等稳态特性,并搭建样机进行实验研究,验证了该直流变换技术方案的可行性和先进性。

新型高增益耦合电感二次型变换器

将开关-耦合电感单元引入二次型变换器,采用一个耦合电感和两个独立电感,在开关管关断时,电感为电容充电;导通时,利用电容为负载供电。与传统变换器相比,所提出的变换器采用更少的器件,能得到高电压增益效果与低占空比。采用了降低电压应力的电容,二极管和半导体开关,开关管应力更低。提出了稳态和比较性能分析,制作了一台140W实验平台,给出实验数据与结论,验证了理论分析的正确性。

基于开关电感的宽电压增益双向DC/DC变换器

此处提出了一种用于储能系统的基于开关电感的宽电压增益双向DC/DC变换器。该变换器在实现双向升降压的同时进一步扩大了双向变换器的电压增益,可以适应不同电压等级的储能电池;相同电压增益下功率器件占空比有效降低,进一步减小了输入电流纹波,有助于提高电池充电性能。分析了放电和充电两种工作模式的工作原理,并搭建实验样机进行验证。实验结果表明在输出电压稳定的工况下,该变换器放电模式可以实现0.5~5倍的电压增益,充电模式可以实现0.2~2倍的电压增益,证明了所提变换器的双向升降压能力和宽电压增益能力。

卧式反应釜电磁感应加热设计

针对大型反应釜的感应加热难以进行大量实验验证的问题,通过将理论计算与有限元仿真相结合的方式,对计算得出的参数进行优化,选择合适的输出功率和谐振频率,完成感应器的设计。通过仿真可以更好对比不同匝数、自热对流和搅拌轴对加热的影响,更直观地查看工件温度分布情况,缩小计算参数误差,实现反应釜加热的工艺要求。

考虑电感饱和的逆变器变开关频率控制仿真

不当操作会导致电感饱和状态下逆变器功率损耗严重,为了提升频率控制的稳定性,提出考虑电感饱和的逆变器变开关频率控制方法。根据逆变器的构成获取相关参数的矢量关系,利用基尔霍夫电压定律生成电感饱和状态的逆变器数学模型,通过旋转构建逆变器在dp坐标系下的数学模型,用于预测推导逆变器的电压值。设计开关控制的三大核心成分,分别为功率鉴定器、频率鉴定器和频率滞环比较器,利用电压定向矢量控制方法分别从三个核心成分中得出逆变器的损耗、功率控制结果以及频率状态量误差,完成逆变器变开关频率控制。实验结果表明,所提方法的电压控制效果较好,频率控制稳定性较高。

基于MPC的耦合电感飞跨电容双向DC/DC变换器功率均衡解耦控制策略

耦合电感功率变换器因耦合电感阻抗、电感值等参数差异易导致功率不均衡。针对耦合电感飞跨电容双向DC/DC变换器,提出一种基于模型预测控制(MPC)的功率均衡解耦控制策略。通过对变换器原理进行分析,建立基于电感电流解耦的数学模型,得到包括电感电流和飞跨电容电压等6个控制变量的解耦控制方法。在此基础上,提出基于MPC的功率均衡解耦控制策略。同时,为降低MPC算法的运算负荷,根据解耦控制模型重构模型预测价值函数,实现各控制变量独立动态寻优,使系统能在稳定控制输出电压及飞跨电容电压的同时,实现两相耦合电感的功率均衡控制。最后,通过理论分析及实验对所提策略进行有效验证。

基于SEPIC的新型高增益DC-DC变换器及衍生拓扑分析

针对光伏并网系统中单开关升压变换器(如SEPIC、Boost、准Z源、二次型)电压增益低和半导体器件电压应力大的问题,提出1种基于SEPIC的外部升压型高增益DC-DC变换器。首先对所提变换器在电感电流连续导通模式和断续导通模式下的工作原理和稳态特性进行详细分析,并与其他新型拓扑进行性能对比。在此基础上,给出了基于外部升压网络的衍生拓扑。最后,通过搭建1台400 V/200 W的实验样机证明了理论分析的准确性。所提变换器利用阻抗网络和开关电容单元构成的外部升压网络提升了SEPIC变换器的电压增益,并改善了半导体器件电压应力大的缺点。