Image classification based on bag-of-words(BOW)has a broad application prospect in pattern recognition field but the shortcomings such as single feature and low classification accuracy are apparent.To deal with this...Image classification based on bag-of-words(BOW)has a broad application prospect in pattern recognition field but the shortcomings such as single feature and low classification accuracy are apparent.To deal with this problem,this paper proposes to combine two ingredients:(i)Three features with functions of mutual complementation are adopted to describe the images,including pyramid histogram of words(PHOW),pyramid histogram of color(PHOC)and pyramid histogram of orientated gradients(PHOG).(ii)An adaptive feature-weight adjusted image categorization algorithm based on the SVM and the decision level fusion of multiple features are employed.Experiments are carried out on the Caltech101 database,which confirms the validity of the proposed approach.The experimental results show that the classification accuracy rate of the proposed method is improved by 7%-14%higher than that of the traditional BOW methods.With full utilization of global,local and spatial information,the algorithm is much more complete and flexible to describe the feature information of the image through the multi-feature fusion and the pyramid structure composed by image spatial multi-resolution decomposition.Significant improvements to the classification accuracy are achieved as the result.展开更多
Ge complementary tunneling field-effect transistors(TFETs) are fabricated with the NiGe metal source/drain(S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of suffi...Ge complementary tunneling field-effect transistors(TFETs) are fabricated with the NiGe metal source/drain(S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope(S factor). Especially, I_d of 0.2 μA/μm is revealed at V_g-V_(th) = V_d = ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K.展开更多
基金Supported by Foundation for Innovative Research Groups of the National Natural Science Foundation of China(61321002)Projects of Major International(Regional)Jiont Research Program NSFC(61120106010)+1 种基金Beijing Education Committee Cooperation Building Foundation ProjectProgram for Changjiang Scholars and Innovative Research Team in University(IRT1208)
文摘Image classification based on bag-of-words(BOW)has a broad application prospect in pattern recognition field but the shortcomings such as single feature and low classification accuracy are apparent.To deal with this problem,this paper proposes to combine two ingredients:(i)Three features with functions of mutual complementation are adopted to describe the images,including pyramid histogram of words(PHOW),pyramid histogram of color(PHOC)and pyramid histogram of orientated gradients(PHOG).(ii)An adaptive feature-weight adjusted image categorization algorithm based on the SVM and the decision level fusion of multiple features are employed.Experiments are carried out on the Caltech101 database,which confirms the validity of the proposed approach.The experimental results show that the classification accuracy rate of the proposed method is improved by 7%-14%higher than that of the traditional BOW methods.With full utilization of global,local and spatial information,the algorithm is much more complete and flexible to describe the feature information of the image through the multi-feature fusion and the pyramid structure composed by image spatial multi-resolution decomposition.Significant improvements to the classification accuracy are achieved as the result.
基金Supported by the National Natural Science Foundation of China under Grant No 61504120the Zhejiang Provincial Natural Science Foundation of China under Grant No LR18F040001the Fundamental Research Funds for the Central Universities
文摘Ge complementary tunneling field-effect transistors(TFETs) are fabricated with the NiGe metal source/drain(S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope(S factor). Especially, I_d of 0.2 μA/μm is revealed at V_g-V_(th) = V_d = ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K.