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Image Classification Based on the Fusion of Complementary Features 被引量:3
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作者 Huilin Gao Wenjie Chen 《Journal of Beijing Institute of Technology》 EI CAS 2017年第2期197-205,共9页
Image classification based on bag-of-words(BOW)has a broad application prospect in pattern recognition field but the shortcomings such as single feature and low classification accuracy are apparent.To deal with this... Image classification based on bag-of-words(BOW)has a broad application prospect in pattern recognition field but the shortcomings such as single feature and low classification accuracy are apparent.To deal with this problem,this paper proposes to combine two ingredients:(i)Three features with functions of mutual complementation are adopted to describe the images,including pyramid histogram of words(PHOW),pyramid histogram of color(PHOC)and pyramid histogram of orientated gradients(PHOG).(ii)An adaptive feature-weight adjusted image categorization algorithm based on the SVM and the decision level fusion of multiple features are employed.Experiments are carried out on the Caltech101 database,which confirms the validity of the proposed approach.The experimental results show that the classification accuracy rate of the proposed method is improved by 7%-14%higher than that of the traditional BOW methods.With full utilization of global,local and spatial information,the algorithm is much more complete and flexible to describe the feature information of the image through the multi-feature fusion and the pyramid structure composed by image spatial multi-resolution decomposition.Significant improvements to the classification accuracy are achieved as the result. 展开更多
关键词 image classification complementary features bag-of-words (BOW) feature fusion
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Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain 被引量:1
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作者 Junkang Li Yiming Qu +3 位作者 Siyu Zeng Ran Cheng Rui Zhang Yi Zhao 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第11期70-73,共4页
Ge complementary tunneling field-effect transistors(TFETs) are fabricated with the NiGe metal source/drain(S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of suffi... Ge complementary tunneling field-effect transistors(TFETs) are fabricated with the NiGe metal source/drain(S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p-and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope(S factor). Especially, I_d of 0.2 μA/μm is revealed at V_g-V_(th) = V_d = ±0.5 V for Ge pTFETs,with the S factor of 28 mV/dec at 7 K. 展开更多
关键词 Ge complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain MOSFET
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