A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti...Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.展开更多
SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同...SiC MOSFET因其高击穿电压、高开关速度、低导通损耗等性能优势而被广泛应用于各类电力电子变换器中。然而,由于其短路耐受时间仅为2~7μs,且随母线电压升高而缩短,快速可靠的短路保护电路已成为其推广应用的关键技术之一。为应对不同母线电压下的Si C MOSFET短路故障,文中提出一种基于漏源电压积分的自适应快速短路保护方法(drain-sourcevoltageintegration-basedadaptivefast short-circuit protection method,DSVI-AFSCPM),研究所提出的DSVI-AFSCPM在硬开关短路(hardswitchingfault,HSF)和负载短路(fault under load,FUL)条件下的保护性能,进而研究不同母线电压对DSVI-AFSCPM的作用机理。同时,探究Si CMOSFET工作温度对其响应速度的影响。最后,搭建实验平台,对所提出的DSVI-AFSCPM在发生硬开关短路和负载短路时不同母线电压、不同工作温度下的保护性能进行实验测试。实验结果表明,所提出的DSVI-AFSCPM在不同母线电压下具有良好的保护速度自适应性,即母线电压越高,短路保护速度越快,并且其响应速度受Si CMOSFET工作温度影响较小,两种短路工况下工作温度从25℃变化到125℃,短路保护时间变化不超过90 ns。因此,该文为Si CMOSFET在不同母线电压下的可靠使用提供一定技术支撑。展开更多
Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor...Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.展开更多
Minimizing the energy consumption to increase the life span and performance of multiprocessor system on chip(MPSoC)has become an integral chip design issue for multiprocessor systems.The performance measurement of com...Minimizing the energy consumption to increase the life span and performance of multiprocessor system on chip(MPSoC)has become an integral chip design issue for multiprocessor systems.The performance measurement of computational systems is changing with the advancement in technology.Due to shrinking and smaller chip size power densities onchip are increasing rapidly that increasing chip temperature in multi-core embedded technologies.The operating speed of the device decreases when power consumption reaches a threshold that causes a delay in complementary metal oxide semiconductor(CMOS)circuits because high on-chip temperature adversely affects the life span of the chip.In this paper an energy-aware dynamic power management technique based on energy aware earliest deadline first(EA-EDF)scheduling is proposed for improving the performance and reliability by reducing energy and power consumption in the system on chip(SOC).Dynamic power management(DPM)enables MPSOC to reduce power and energy consumption by adopting a suitable core configuration for task migration.Task migration avoids peak temperature values in the multicore system.High utilization factor(ui)on central processing unit(CPU)core consumes more energy and increases the temperature on-chip.Our technique switches the core bymigrating such task to a core that has less temperature and is in a low power state.The proposed EA-EDF scheduling technique migrates load on different cores to attain stability in temperature among multiple cores of the CPU and optimized the duration of the idle and sleep periods to enable the low-temperature core.The effectiveness of the EA-EDF approach reduces the utilization and energy consumption compared to other existing methods and works.The simulation results show the improvement in performance by optimizing 4.8%on u_(i) 9%,16%,23%and 25%at 520 MHz operating frequency as compared to other energy-aware techniques for MPSoCs when the least number of tasks is in running state and can schedule more tasks to make an energy-efficient processor by controlling and managing the energy consumption of MPSoC.展开更多
Increasing the life span and efficiency of Multiprocessor System on Chip(MPSoC)by reducing power and energy utilization has become a critical chip design challenge for multiprocessor systems.With the advancement of te...Increasing the life span and efficiency of Multiprocessor System on Chip(MPSoC)by reducing power and energy utilization has become a critical chip design challenge for multiprocessor systems.With the advancement of technology,the performance management of central processing unit(CPU)is changing.Power densities and thermal effects are quickly increasing in multi-core embedded technologies due to shrinking of chip size.When energy consumption reaches a threshold that creates a delay in complementary metal oxide semiconductor(CMOS)circuits and reduces the speed by 10%–15%because excessive on-chip temperature shortens the chip’s life cycle.In this paper,we address the scheduling&energy utilization problem by introducing and evaluating an optimal energy-aware earliest deadline first scheduling(EA-EDF)based technique formultiprocessor environments with task migration that enhances the performance and efficiency in multiprocessor systemon-chip while lowering energy and power consumption.The selection of core andmigration of tasks prevents the system from reaching itsmaximumenergy utilization while effectively using the dynamic power management(DPM)policy.Increase in the execution of tasks the temperature and utilization factor(u_(i))on-chip increases that dissipate more power.The proposed approach migrates such tasks to the core that produces less heat and consumes less power by distributing the load on other cores to lower the temperature and optimizes the duration of idle and sleep times across multiple CPUs.The performance of the EA-EDF algorithm was evaluated by an extensive set of experiments,where excellent results were reported when compared to other current techniques,the efficacy of the proposed methodology reduces the power and energy consumption by 4.3%–4.7%on a utilization of 6%,36%&46%at 520&624 MHz operating frequency when particularly in comparison to other energy-aware methods for MPSoCs.Tasks are running and accurately scheduled to make an energy-efficient processor by controlling and managing the thermal effects on-chip and optimizing the energy consumption of MPSoCs.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported by the Plan for Science Innovation Talent of Henan Province(No.154100510007)the Natural and Science Foundation in Henan Province(No.162300410179)the Cultivation Foundation of Henan Normal University National Project(No.2017PL04)
文摘Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
文摘Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.
文摘Minimizing the energy consumption to increase the life span and performance of multiprocessor system on chip(MPSoC)has become an integral chip design issue for multiprocessor systems.The performance measurement of computational systems is changing with the advancement in technology.Due to shrinking and smaller chip size power densities onchip are increasing rapidly that increasing chip temperature in multi-core embedded technologies.The operating speed of the device decreases when power consumption reaches a threshold that causes a delay in complementary metal oxide semiconductor(CMOS)circuits because high on-chip temperature adversely affects the life span of the chip.In this paper an energy-aware dynamic power management technique based on energy aware earliest deadline first(EA-EDF)scheduling is proposed for improving the performance and reliability by reducing energy and power consumption in the system on chip(SOC).Dynamic power management(DPM)enables MPSOC to reduce power and energy consumption by adopting a suitable core configuration for task migration.Task migration avoids peak temperature values in the multicore system.High utilization factor(ui)on central processing unit(CPU)core consumes more energy and increases the temperature on-chip.Our technique switches the core bymigrating such task to a core that has less temperature and is in a low power state.The proposed EA-EDF scheduling technique migrates load on different cores to attain stability in temperature among multiple cores of the CPU and optimized the duration of the idle and sleep periods to enable the low-temperature core.The effectiveness of the EA-EDF approach reduces the utilization and energy consumption compared to other existing methods and works.The simulation results show the improvement in performance by optimizing 4.8%on u_(i) 9%,16%,23%and 25%at 520 MHz operating frequency as compared to other energy-aware techniques for MPSoCs when the least number of tasks is in running state and can schedule more tasks to make an energy-efficient processor by controlling and managing the energy consumption of MPSoC.
文摘Increasing the life span and efficiency of Multiprocessor System on Chip(MPSoC)by reducing power and energy utilization has become a critical chip design challenge for multiprocessor systems.With the advancement of technology,the performance management of central processing unit(CPU)is changing.Power densities and thermal effects are quickly increasing in multi-core embedded technologies due to shrinking of chip size.When energy consumption reaches a threshold that creates a delay in complementary metal oxide semiconductor(CMOS)circuits and reduces the speed by 10%–15%because excessive on-chip temperature shortens the chip’s life cycle.In this paper,we address the scheduling&energy utilization problem by introducing and evaluating an optimal energy-aware earliest deadline first scheduling(EA-EDF)based technique formultiprocessor environments with task migration that enhances the performance and efficiency in multiprocessor systemon-chip while lowering energy and power consumption.The selection of core andmigration of tasks prevents the system from reaching itsmaximumenergy utilization while effectively using the dynamic power management(DPM)policy.Increase in the execution of tasks the temperature and utilization factor(u_(i))on-chip increases that dissipate more power.The proposed approach migrates such tasks to the core that produces less heat and consumes less power by distributing the load on other cores to lower the temperature and optimizes the duration of idle and sleep times across multiple CPUs.The performance of the EA-EDF algorithm was evaluated by an extensive set of experiments,where excellent results were reported when compared to other current techniques,the efficacy of the proposed methodology reduces the power and energy consumption by 4.3%–4.7%on a utilization of 6%,36%&46%at 520&624 MHz operating frequency when particularly in comparison to other energy-aware methods for MPSoCs.Tasks are running and accurately scheduled to make an energy-efficient processor by controlling and managing the thermal effects on-chip and optimizing the energy consumption of MPSoCs.
