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Ionic Conductivity of Nano-LaF_3 Bulk Material at Room Temperature
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作者 Wu Daxiong Wu Xijun Lü Yanfei Wang Hui 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第2期192-192,共1页
Nanocrystalline powder of LaF3 was synthesized by a method of direct precipitation from water solution. Particle size and shape of LaF3 nanocrystalline powder was analysed with TEM. Particles were mainly spherical wit... Nanocrystalline powder of LaF3 was synthesized by a method of direct precipitation from water solution. Particle size and shape of LaF3 nanocrystalline powder was analysed with TEM. Particles were mainly spherical with narrow particle size distribution (10 20 nm). The average particle size analysed with XRD is 16.7 nm. Nano-LaF3 bulk material was prepared by compacting the powder to 1 GPa at room temperature and a vacuum of 10^-4 Pa. The ionic conductivity of nano-LaF3 bulk material was studied with complex impedance spectra at room temperature. The ionic conductivity of nano-LaF3 bulk material (1 × 10^-5 S·cm^-1 ) at room temperature is significantly increased compared to that of single crystal LaF3 (1 × 10^-6 S·cm^-1). A special phenomenon was observed firstly time that the ionic conductivity increased gradually with multiple testing in result of relaxation. 展开更多
关键词 NANOCRYSTALLINE nano-LaF3 bulk material ionic conductivity complex impedance spectra rare earths
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Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy
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作者 路忠林 邹文琴 +1 位作者 徐明祥 张凤鸣 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第7期399-403,共5页
C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphir... C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30~ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films. 展开更多
关键词 ZnO grain boundaries complex impedance spectra single crystalline and bi-crystallinethin films
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