A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed,...A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.展开更多
Low noise distributed amplifiers （DAs） using the novel low noise composite-channel Al0.3 Ga0.7N/ml0.05 Ga0.95 N/ GaN HEMTs （CC-HEMTs） with 1μm-gate-length are designed and fabricated. Simulated and measured resul...Low noise distributed amplifiers （DAs） using the novel low noise composite-channel Al0.3 Ga0.7N/ml0.05 Ga0.95 N/ GaN HEMTs （CC-HEMTs） with 1μm-gate-length are designed and fabricated. Simulated and measured results of the DAs are characterized. The measured results show that the low noise DAs have input and output VSWR （voltage standing wave ratio） of less than 2.0,associated gain of more than 7.0dB and gain ripple of less than ldB in the frequency range from 2 to 10GHz. Noise figure of the DAs is less than 5dB in the frequency range from 2 to 6GHz,and less than 6.5dB in the frequency range from 2 to 10GHz. The measured results agree well with the simulated ones.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60476035）.
文摘A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.
基金supported by the National Natural Science Foundation of China(No.60776052)~~
文摘Low noise distributed amplifiers （DAs） using the novel low noise composite-channel Al0.3 Ga0.7N/ml0.05 Ga0.95 N/ GaN HEMTs （CC-HEMTs） with 1μm-gate-length are designed and fabricated. Simulated and measured results of the DAs are characterized. The measured results show that the low noise DAs have input and output VSWR （voltage standing wave ratio） of less than 2.0,associated gain of more than 7.0dB and gain ripple of less than ldB in the frequency range from 2 to 10GHz. Noise figure of the DAs is less than 5dB in the frequency range from 2 to 6GHz,and less than 6.5dB in the frequency range from 2 to 10GHz. The measured results agree well with the simulated ones.
