Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

A vertical junction barrier Schottky diode with a high-K/low-K compound dielectric structure is proposed and optimized to achieve a high breakdown voltage(BV).There is a discontinuity of the electric field at the interface of high-K and low-K layers due to the different dielectric constants of high-K and low-K dielectric layers.A new electric field peak is introduced in the n-type drift region of junction barrier Schottky diode(JBS),so the distribution of electric field in JBS becomes more uniform.At the same time,the effect of electric-power line concentration at the p-n junction interface is suppressed due to the effects of the high-K dielectric layer and an enhancement of breakdown voltage can be achieved.Numerical simulations demonstrate that GaN JBS with a specific on-resistance(R_(on,sp)) of 2.07 mΩ·cm^(2) and a BV of 4171 V which is 167% higher than the breakdown voltage of the common structure,resulting in a high figure-of-merit(FOM) of 8.6 GW/cm^(2),and a low turn-on voltage of 0.6 V.

Enhancing the Goos-Hänchen shift based on quasi-bound states in the continuum through material asymmetric dielectric compound gratings

Quasi-bound state in the continuum(QBIC)resonance is gradually attracting attention and being applied in Goos-Hänchen(GH)shift enhancement due to its high quality(Q)factor and superior optical confinement.Currently,symmetry-protected QBIC resonance is often achieved by breaking the geometric symmetry,but few cases are achieved by breaking the material symmetry.This paper proposes a dielectric compound grating to achieve a high Q factor and high-reflection symmetry-protectede QBIC resonance based on material asymmetry.Theoretical calculations show that the symmetry-protected QBIC resonance achieved by material asymmetry can significantly increase the GH shift up to-980 times the resonance wavelength,and the maximum GH shift is located at the reflection peak with unity reflectance.This paper provides a theoretical basis for designing and fabricating high-performance GH shift tunable metasurfaces/dielectric gratings in the future.