The minority carrier diffusion length of n-type GaN fdms grown by metalorganic chemical vapor deposition （MOCVD） has been studied by measuring the surface photovoltaic （PV） spectra. It was found that the minority ...The minority carrier diffusion length of n-type GaN fdms grown by metalorganic chemical vapor deposition （MOCVD） has been studied by measuring the surface photovoltaic （PV） spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority cartier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.展开更多
文摘The minority carrier diffusion length of n-type GaN fdms grown by metalorganic chemical vapor deposition （MOCVD） has been studied by measuring the surface photovoltaic （PV） spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority cartier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.
