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Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on SOI substrate 被引量:1
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作者 陈文锁 张波 +2 位作者 李肇基 方健 关旭 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第6期44-46,共3页
A new lateral insulated-gate bipolar transistor(LIGBT) with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductiv... A new lateral insulated-gate bipolar transistor(LIGBT) with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies. 展开更多
关键词 enhanced conductivity modulation effect shielded anode SIMOX technology
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