A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductiv...A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.60876053,60806025,60976060).
文摘A new lateral insulated-gate bipolar transistor（LIGBT） with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.
