A UTD SOLUTION FOR THE RADIATED FIELD FROM MONOPOLE ON A CONDUCTING CYLINDER SURFACE WITH A DIELECTRIC COATING

A can0nical problem is investigated for high frequency electromagnetic radiation from amonopo1e on a conducting cylinder with c0ating-At first, the exact solution of this problem is given interms of Dyadic Green's function method. Then, using Watson transformation and high frequency asymptotic approximate technique to the exact soluton, a UTD soultion is obtained. The radiation field excitedby a monopole is expressed in terms of the compound Fock' S functions (CFF), which reduce to the geomertrical optics result in the deep lit region and the creeping waves in the shadow region.

Fast Measurement of Dielectric Conductivity for Space Application by Surface Potential Decay Method

Surface potential decay of polymers for electrical insulation can help to determine the dark conductivity for spacecraft charging analysis. Due to the existence of radiation-induced conductivity, it decays fast in the first few hours after irradiation and exponentially slowly for the remaining time. The measurement of dark conductivity with this method usually takes the slow part and needs a couple of days. Integrating the Fowler formula into the deep dielectric charging equations, we obtain a new expression for the fast decay part. The experimental data of different materials, dose rates and temperatures are fitted by the new expression. Both the dark conductivity and the radiation-induced conductivity are derived and compared with other methods. The result shows a good estimation of dark conductivity and radiation-induced conductivity in high-resistivity polymers, which enables a fast measurement of dielectric conductivity within about 600 rain after irradiation.

Preparation and Electrorheological Property of Y_4O(OH)_9(NO_3)-NH_4NO_3 Materials

The new electrorheologicai （ER） material, a particle material composed of Y4O（OH）9（NO3） and NH4NO3, was obtained. They display better ER performance. The shear stress of the suspension of Y4O （OH）9 （NO3） （ NH4NO3 ）2.8 material in dimethyl silicone oil reaches 1469 Pa at an electric field strength （E） of 4.2 kV·mm^-1 and the shear rate （7） of 150 s^-1 The relative shear stress, τ E/τ0（ τE and τ0 are the shear stresses at E = 4.2 and 0 kV·mm^-1 respectively）, is up to 29, which is 19 times that of pure Y2O3 material. The dielectric and conductive property of the materials play important roles in the modification of the ER effect of the particle materials. The researches on these new ER materials are very useful for obtaining a better understanding on the mechanism of the ER effect and finding an ideal ER material.

Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However,the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge,ultraviolet（UV） ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition（ALD） La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing.The x-ray photoelectron spectroscopy（XPS） and conductive atomic force microscopy（AFM） results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600？C annealing,and the electrical characteristics are greatly improved.

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

In this paper,ground-signal-ground type through-silicon vias（TSVs） exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-circuit model and passive elements（RLGC） parameters based on the physical parameters are presented with the frequency up to 100 GHz.The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm.Therefore,the applied voltage of TSVs only needs to achieve the flatband voltage,and there is no need to indicate the threshold voltage.This is due to the small permittivity of air gaps.The proposed model shows good agreement with the simulation results of ADS and Ansoft＇s HFSS over a wide frequency range.

Optical,UV-Vis spectroscopy studies,electrical and dielectric properties of transition metal-based of the novel organic–inorganic hybrid(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O

In this work,we are interested in the synthesis of new hybrid material(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O grown by hydrothermal methods.X-ray diffraction indicates that this compound crystallizes at 150(2)K in the monoclinic system with C2/c space group,with the following unit cell parameters:a=19:6830(15)Å,b=18:1870(15)Å,c=6:8567(6)Å,β=93:224ð3Þ○and Z=4.On the other hand,the optical properties of this compound were studied using ultraviolet-visible(UV-Vis)spectroscopy in the range 200-800 nm.Furthermore,the optical absorbances are used to determine the absorption coefficientαand the optical band gap E g,so the Tauc model was used to determine the optical gap energy of the compound(C_(6)H_(10)N_(2))(Hg_(2)Cl_(5))_(2)·3H_(2)O.The analysis of the results revealed the existence of optical allowed indirect transition mechanisms with the band gap energy equal to(2.37 eV)for liquid and(4.33 eV)for solid.Impedance measurements indicate that the electrical and dielectric properties are strongly dependent on both temperature and frequency.Nyquist plots(Z'' versus Z ')show that the conductivity behavior is accurately represented by an equivalent circuit model which consists of a series combination of bulk and grain boundary.Furthermore,the angular frequency dependence plots of the real and imaginary parts,ε' andε'',of complex dielectric permittivityε*and tanδlosses at several temperatures between 303 and 453 K were studied for the title compound.Finally,the modulus plots can be characterized by the presence of two relaxation peaks.

Hybridization between microstructure and magnetization improvement in lead and RE co-doped BiFeO_3

The crystal structure,magnetic and electrical properties of Bi（0.96）Pb（0.04） FeO3 and Bi（0.92）Pb（0.04）RE（0.04）FeO3（RE=La,Sm,Dy and Yb）polycrystalline samples were prepared by the flash autocombustion technique.X-ray diffraction（XRD）measurements show that the rare-earth doped compositions crystallized in rhombohedral symmetry of space group R3 c.The undoped sample consisted needle shape particles while rare earth substitution preferred platelet like particles as clarified from high resolution transmission electron microscopy（HRTEM）.Morphological features were examined using field emission scanning electron microscopy（FESEM）.Magnetization measurements showed that Yb^3＋ samples possessed the highest room temperature saturation magnetization while when Bi^3＋ ions were substituted by La^3＋ ions,a smaller MS（0.28 emu/g）was obtained.The coexistence of ferroelectric and magnetic transitions was detected using DSC and χM,indicating the multiferroic characteristics of Bi（0.92）Pb（0.04）RE（0.04）FeO3 crystallites.The Néel temperature shifted upwards with decreasing the ionic radius of rare earth ion.Nice correlation was established between microstructure,morphology and magnetic properties in view of the contribution of magnetocrystalline and shape anisotropy in the magnetic parameters values.

Effect of Sintering on Grain Boundary Microstructure and Electrical Properties of CaCu_3Ti_4O_(12) Ceramics

CaCu3Ti4O12 ceramic with a giant dielectric constant was synthesized by sol-gel method and sintered in three different sintering conditions： 1 035 ℃ for 48 h, 1 080 ℃ for 3 h and 48 h. The phase of the ceramics, the element distribution, the valance state of Ti ions at grain boundaries, and the electrical properties were characterized via X-ray diffraction（XRD）, energy dispersive X-ray analysis（EDAX）, X-ray photoelectron spectroscopy（XPS）, electrical conduction and dielectric measurement. The results demonstrate that the grain-boundary microstructure and the electrical properties are influenced by sintering conditions： 1 By raising sintering temperature, the Cu-rich and Ti-poor grain boundary was formed and grain resistivity was decreased. 2 By prolonging sintering time, the content of Ti3＋ near the grain boundary increased, leading to the decrease of the grain-boundary resistivity and the increase of the activation energy at grain boundary. The ceramic, sintering at 1 080 ℃ for 48 h, exhibited a small grain resistivity（60.5 ＊cm）, a large grain-boundary activation energy（0.42 e V）, and a significantly enhanced dielectric constant（close to 1×105 at a low frequency of 1×103 Hz）. The results of electrical properties accord with the internal boundary layer capacitor model for explaining the giant dielectric constant observed in Ca Cu3Ti4O12 ceramics.