In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal-superconductor （NS） junction in the clean limit is studied theoretically. First we solve the quasi...In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal-superconductor （NS） junction in the clean limit is studied theoretically. First we solve the quasiclassical Eilenberger equations, and using the obtained density of states we can acquire the thermal and electrical conductances for the NS junction. Then we compare the conductance in a normal region of an NS junction with that in a single layer of normal metal （N）. Moreover, we study the Wiedemann-Franz （WF） law for these two cases （iN and NS）. From our calculations we conclude that the behaviour of the NS junction does not conform to the WF law for all temperatures. The effect of the thickness of normal metal on the thermal conductivity is also theoretically investigated in the paper.展开更多
A mixed Langmuir-Blodgett film was built up by mixture 1:1 of bis (ethyldithio)tetrathiafulvalene-tetracyanoquinodimethane/stearie acid(BEDT-TTF- TCNQ/SA).A degree of charge transfer(CT)in complex of BEDT-TTF with TCN...A mixed Langmuir-Blodgett film was built up by mixture 1:1 of bis (ethyldithio)tetrathiafulvalene-tetracyanoquinodimethane/stearie acid(BEDT-TTF- TCNQ/SA).A degree of charge transfer(CT)in complex of BEDT-TTF with TCNQ was estimated at 0.477～0,486 by Raman frequencies of central Vc=c and Vc-s,The existence of charge transfer in BEDT-TTF-TCNQ has been confirmed by FTIR and XPS spectroscopy.展开更多
HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperatu...HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.展开更多
文摘In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal-superconductor （NS） junction in the clean limit is studied theoretically. First we solve the quasiclassical Eilenberger equations, and using the obtained density of states we can acquire the thermal and electrical conductances for the NS junction. Then we compare the conductance in a normal region of an NS junction with that in a single layer of normal metal （N）. Moreover, we study the Wiedemann-Franz （WF） law for these two cases （iN and NS）. From our calculations we conclude that the behaviour of the NS junction does not conform to the WF law for all temperatures. The effect of the thickness of normal metal on the thermal conductivity is also theoretically investigated in the paper.
文摘A mixed Langmuir-Blodgett film was built up by mixture 1:1 of bis (ethyldithio)tetrathiafulvalene-tetracyanoquinodimethane/stearie acid(BEDT-TTF- TCNQ/SA).A degree of charge transfer(CT)in complex of BEDT-TTF with TCNQ was estimated at 0.477～0,486 by Raman frequencies of central Vc=c and Vc-s,The existence of charge transfer in BEDT-TTF-TCNQ has been confirmed by FTIR and XPS spectroscopy.
基金Project supported by the Natural Science Foundation of Shanghai(No.15ZR1418700)the Natural Science Foundation of China(Nos.51272159,61405118)the Natural Science Foundation of Zhejiang(Nos.LY15A040001,LQ13A040004)
文摘HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al（Pt）/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.
