β-Ga2O3 cone-like nanowires have been in-situ grown on the surface of gallium grains and films by heating gallium substrates at 750-1000℃ for 2h in air.The controllable synthesis of β-Ga2O3 nano-wires with differen...β-Ga2O3 cone-like nanowires have been in-situ grown on the surface of gallium grains and films by heating gallium substrates at 750-1000℃ for 2h in air.The controllable synthesis of β-Ga2O3 nano-wires with different diameters and lengths was achieved by adjusting the heating temperature and time.The as-synthesized products were characterized by means of X-ray diffraction,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the β-Ga2O3 nanowires are single crystalline with a monoclinic structure and have a controllable diameter and length in the range of 30-100nm and 0.5-1.5μm,respectively.A possible mechanism was also proposed to account for the formation of β-Ga2O3 cone-like nanowires.Photoluminescence spectra of the β-Ga2O3 nanowires obtained at different temperatures were measured at room temperature,and a strong blue photolumi-nescence with peaks at 430 and 460nm and a weak red photoluminescence with peak at 713nm were observed.The blue light emission intensity decreases with increasing the reaction temperature,how-ever,the red light emission intensity hardly changes.The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy with a hole on a gallium-oxygen vacancy pair and the nitrogen dopants,etc.,respectively.展开更多
基金Supported by the National Natural Science Foundation of China(Grant No. 20573072)Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20060718010)
文摘β-Ga2O3 cone-like nanowires have been in-situ grown on the surface of gallium grains and films by heating gallium substrates at 750-1000℃ for 2h in air.The controllable synthesis of β-Ga2O3 nano-wires with different diameters and lengths was achieved by adjusting the heating temperature and time.The as-synthesized products were characterized by means of X-ray diffraction,scanning electron mi-croscopy and transmission electron microscopy.The results showed that the β-Ga2O3 nanowires are single crystalline with a monoclinic structure and have a controllable diameter and length in the range of 30-100nm and 0.5-1.5μm,respectively.A possible mechanism was also proposed to account for the formation of β-Ga2O3 cone-like nanowires.Photoluminescence spectra of the β-Ga2O3 nanowires obtained at different temperatures were measured at room temperature,and a strong blue photolumi-nescence with peaks at 430 and 460nm and a weak red photoluminescence with peak at 713nm were observed.The blue light emission intensity decreases with increasing the reaction temperature,how-ever,the red light emission intensity hardly changes.The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy with a hole on a gallium-oxygen vacancy pair and the nitrogen dopants,etc.,respectively.
