Aligned silica nanowire arrays and silica microflowers were fabricated using boron as the catalyst and under the flow N2 gas. The obtained product had no catalyst contamination. And silica nanowires had long lengths o...Aligned silica nanowire arrays and silica microflowers were fabricated using boron as the catalyst and under the flow N2 gas. The obtained product had no catalyst contamination. And silica nanowires had long lengths of a few hundreds. The growth of nanowire arrays and microflowers was explained using mechanism. Parallel-plate capacitors using silica nanowire mat as the dielectric were fabricated. The silica nanowire capacitor shows a specific capacitance of 0.24 n F/cm~2 at the frequency of 100 Hz. The capacitor is not monotone changing with the frequency. The measurement of mechanical properties shows that the tunneling current increases along with an increase in bending angle of the capacitor.展开更多
Micro channel of T2 copper were molding through electronic-magnetic forming experiments.Laser scanning confocal microscope and contourgraph were used to measure the section profile and sheet thickness.The effects of v...Micro channel of T2 copper were molding through electronic-magnetic forming experiments.Laser scanning confocal microscope and contourgraph were used to measure the section profile and sheet thickness.The effects of voltage,shape of channel and discharge cycles on laws of metal flow were studied.Results showed that forming depth of micro channel and thinning of sheet thickness increased as the increasing of the voltage.Mold-filling capacity of components formed by two molds with different structures had been increased when the voltage was increased.Mold with semicircle structure facilitate the material flow and the forming depth of parts was relative large.Semicircle structure was better than taper structure in mold-filling capacity.A number of small pulse discharges can improve the forming quality and deformation,but local thinning in sheet metal leads to non-uniform distribution of thickness.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 61404036)the National Basic Research Program of China (No. 2012CB934104)+1 种基金the Fundamental Research Funds for the Central Universities (Nos. HIT. NSRIF.2015039, 01508536)State Key Laboratory of Urban Water Resource and Environment, Harbin Institute of Technology (No. 2016 TS 06)
文摘Aligned silica nanowire arrays and silica microflowers were fabricated using boron as the catalyst and under the flow N2 gas. The obtained product had no catalyst contamination. And silica nanowires had long lengths of a few hundreds. The growth of nanowire arrays and microflowers was explained using mechanism. Parallel-plate capacitors using silica nanowire mat as the dielectric were fabricated. The silica nanowire capacitor shows a specific capacitance of 0.24 n F/cm~2 at the frequency of 100 Hz. The capacitor is not monotone changing with the frequency. The measurement of mechanical properties shows that the tunneling current increases along with an increase in bending angle of the capacitor.
基金Item Sponsored by the National Natural Science Foundation of China[No.5083500250805035]
文摘Micro channel of T2 copper were molding through electronic-magnetic forming experiments.Laser scanning confocal microscope and contourgraph were used to measure the section profile and sheet thickness.The effects of voltage,shape of channel and discharge cycles on laws of metal flow were studied.Results showed that forming depth of micro channel and thinning of sheet thickness increased as the increasing of the voltage.Mold-filling capacity of components formed by two molds with different structures had been increased when the voltage was increased.Mold with semicircle structure facilitate the material flow and the forming depth of parts was relative large.Semicircle structure was better than taper structure in mold-filling capacity.A number of small pulse discharges can improve the forming quality and deformation,but local thinning in sheet metal leads to non-uniform distribution of thickness.
