Tuning Structural and Electronic Configuration of FeN_(4) via External S for Enhanced Oxygen Reduction Reaction

The Fe-N-C material represents an attractive oxygen reduction reaction electrocatalyst,and the FeN_(4)moiety has been identified as a very competitive catalytic active site.Fine tuning of the coordination structure of FeN_(4)has an essential impact on the catalytic performance.Herein,we construct a sulfur-modified Fe-N-C catalyst with controllable local coordination environment,where the Fe is coordinated with four in-plane N and an axial external S.The external S atom affects not only the electron distribution but also the spin state of Fe in the FeN_(4)active site.The appearance of higher valence states and spin states for Fe demonstrates the increase in unpaired electrons.With the above characteristics,the adsorption and desorption of the reactants at FeN_(4)active sites are optimized,thus promoting the oxygen reduction reaction activity.This work explores the key point in electronic configuration and coordination environment tuning of FeN_(4)through S doping and provides new insight into the construction of M-N-C-based oxygen reduction reaction catalysts.

Human blood plasma-based electronic integrated circuit amplifier configuration

Dear Editor： There is accumulating evidence that human blood electronic circuit components and their application circuits become more and more important to cyborg implant/engineering, man-machine interface, hu- man disease detection and healing, and artificial brain evolutionusl. Here, we report the first development of human plasma-based amplifier circuit in the dis- crete as well as integrated circuit （IC） configuration mode. Electrolytes in the human blood contain an enormous number of charge carriers such as positive and negative molecule/atom ions, which are electri- cally conducting media and therefore can be utilized for developing electronic circuit components and their application circuits. These electronic circuits obvi- ously have very high application impact potential towards bio-medical engineering and medical science and technology.

Coordination configurations of cupric tartrate in electronic industry wastewater

The coordination structure of cupric tartrate(Cu−TA)complex was investigated by ultraviolet−visible(UV-Vis)and liquid chromatography/mass spectrometer(LC-MS)firstly;furthermore,effective coordination configurations and electronic properties of Cu−TA in aqueous solution were systematically revealed by density functional theory(DFT)calculations.Consistently,Job plots show the possible existence of[Cu(TA)]and[Cu(TA)_(2)]^(2-)at 230 and 255 nm based on UV-Vis results.LC-MS results confirm the existence of the single and high coordination complexes[Cu_(2)(TA)_(2)]^(+),[Cu(TA)_(2)]^(+)and[Cu_(2)(TA)_(3)(H_(2)O)_(2)(OH)_(2)]^(2+).DFT calculation results show that carboxylic oxygen and hydroxyl oxygen of tartaric acid(TA)are preferred sites for Cu(Ⅱ)coordination.[Cu(TA)](1H,3H sites O of TA coordinated with Cu(Ⅱ)),[Cu(TA)_(2)]^(2-)(two 1^(C),2^(H) sites O of TA coordinated with Cu(Ⅱ)),and[Cu(TA)_(3)]^(4-)(three 2H,3H sites O of TA coordinated with Cu(Ⅱ))should be dominant coordination configurations of Cu−TA.The corresponding Gibbs reaction energies are-170.1,-136.2,and-90.2 kJ/mol,respectively.

AB INITIO CONFIGURATION INTERACTION STUDY OF THE ELECTRONIC AND GEOMETRIC STRUCTURE OF MIXED NEUTRAL AND CATIONIC BLi_k（k＝1~7）CLUSTERS

The geometries of mixed neutral and cationic BLik(k=1-7)clusters have ben determined with energy gradient method.The correlation energy is considered with the single-double configuration interaction(CISD).The boron atom B takes the central position in the most stable geometries of all clusters studied except in the neutral BLi3 cluster.The binding energies per atom and the second differences in energies are discussed.

Electronic States of Difluorocarbene Calculated by Multireference Configuration Interaction Method

We investigate the geometries and energies of seven electronic states X-1A1, A1B1, a-3B1, B-1A2,b-3A2, C1B2 and c-3B2 of CF2 carbene using internally contracted multireference configuration interaction methods including Davidson correction （icMRCIq-Q） with different basis sets aug-cc-pVXZ （X=T, Q, 5）. For the first time, the potential energy curves of electronic states of CF2 related icMRCI＋Q/aug-cc-pVTZ level. The ab initio results will and dynamics of electronic states of CF2 radical. to the lowest dissociation limit are calculated at the further increase our understanding of the structures

Relative Irradiance Measurement and Bonding Configurations of Amorphous Fluorinated Carbon Films Deposited by Electron Cyclotron Resonance Plasma

a-C:F films are deposited by microwave electron cyclotron resonance (ECR)plasma chemical vapor deposition (CVD) using trifluoromethane (CHF3) and benzene (C6H6) as source gases at different microwave powers. The radicals in plasma originating from source gases dissociation are analyzed by relative irradiance measurement. The bonding configurations and binding state of a-C:F films are measured with Fourier-transformed infrared spectrometer (FTIR) and x-ray photoelectron spectroscopy (XPS). The results show that a-C:F films are mainly composed of CF radical at lower powers but of CF2 radical at higher powers. The deposition of films is related to the radicals generated in plasma and the main bonding configurations are dependent on the ratio of CF to CF2 radicals in films.

Density functional investigations for geometric and electronic properties of In_4M and In_(12)M (M=C,Si,In) clusters

First-principle calculations are performed to study geometric and electronic properties of both neutral and anionic In4M and In12M （M = C, Si, In） clusters. In4C and In4Si are found to be tetrahedral molecules. The icosahedral structure is found to be unfavourable for In12M. The most stable structure for In12C is a distorted buckled biplanar structure while for In12Si it is of an In-cage with the Si located in the centre. Charge effect on the structure of In12M is discussed. In4C has a significantly large binding energy and an energy gap between the highest-occupied molecularorbital level and the lowest unoccupied molecular-orbital level, a low electron affinity, and a high ionization potential, which are the characters of a magic cluster, enriching the family of doped-group-IIIA metal clusters for cluster-assembled materials.

Effects of electron correlation and the Breit interaction on one- and two-electron one-photon transitions in double K hole states of He-like ions(10 ≤ Z ≤ 47)

The x-ray energies and transition rates associated with single and double electron radiative transitions from the double K hole state 2s2p to the 1s2s and 1s^2 configurations of 11 selected He-like ions(10 ≤ Z ≤ 47) are calculated using the fully relativistic multi-configuration Dirac–Fock method(MCDF). An appropriate electron correlation model is constructed with the aid of the active space method, which allows the electron correlation effects to be studied efficiently. The contributions of the electron correlation and the Breit interaction to the transition properties are analyzed in detail. It is found that the two-electron one-photon(TEOP) transition is correlation sensitive. The Breit interaction and electron correlation both contribute significantly to the radiative transition properties of the double K hole state of the He-like ions. Good agreement between the present calculation and previous work is achieved. The calculated data will be helpful to future investigations on double K hole decay processes of He-like ions.

Vacuum deposited film growth,morphology and interfacial electronic structures of 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT)

Interfaces play critical roles in electronic devices and provide great diversity of film morphology and device performance.We retrospect the substrate mediated vacuum film growth of benchmark high mobility material 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT)and the interface electronic structures.The film growth of C8-BTBT molecules is diversified depending on the substrate-molecule and molecule-molecule interactions.On atomic smooth substrates C8-BTBT film grows in layer-by-layer mode while on coarse substrate it grows in islands mode.The initial molecular layer at dielectric,semiconductor and conductive substrates displays slight different lattice structure.The initial molecule orientation depends on the substrate and will gradually change to standing up configuration as in bulk phase.C8-BTBT behaves as electron donor when contacting with dielectric and stable conductive materials.This usually induces a dipole layer pointing to C8-BTBT and an upward bend bending in C8-BTBT side toward the interface.Although it is air stable,C8-BTBT is chemically reactive with some transition metals and compounds.The orientation change from lying down to standing up in the film usually leads to decrease of ionization potential.The article provides insights to the interface physical and chemical processes and suggestions for optimal design and fabrication of C8-BTBT based devices.

A high power MOPA free-electron laser with narrowline-width

A new kind of MOPA configuration to obtain a high power free-electron laser with very narrow line-width that can satisfy the requirements of some applications such as the laser isotope separation has been proposed, which is investigated by onedimension simulations.

Two-electron and one-photon transitions in highly charged nickel-like ions

This paper calculates the transition wavelengths and probabilities of the two-electron and one-photon （TEOP） transition from the （3s1/2^-14dj）J=1,2 to （3P3/2^-14s1/2）J=1 and the （3P1/2^-14s1/2）J=1 to （3dj^-14dj＇）J=1,2 for highly charged Ni-like ions with atomic number Z in the range 47 〈 Z 〈 92. In the calculations, the multi-configuration Dirac-Fock method and corresponding program packages GRASP92 and REOS99 were used, and the relativistic effects, correlation effects and relaxation effects were considered systematically. It is found that the TEOP transitions are very sensitive to the correlation of electrons, and the probabilities will be enhanced sharply in some special Z regions along the isoelectronic sequence. The present TEOP transition wavelengths are compared with the available data from some previous publications, good agreement is obtained.

Electron momentum spectroscopy of NF_3

The electronic structure of nitrogen trifluoride was investigated by combining the high-resolution electron momentum spectroscopy with the high-level calculations. The experimental binding energy spectra and the momentum distributions of each orbital were compared with the results of Hartree-Fock, density functional theory （DFT）, and symmetry-adapted- cluster configuration-interaction （SAC-CI） methods. SAC-CI and DFT-B3LYP with the aug-cc-pVTZ basis set can well reproduce the binding energy spectra and the observed momentum distributions of the valence orbitals except 1 a2 and 4e orbitals. It was found that the calculated momentum distributions using DFT-B3LYP are even better than those using the high-level SAC-CI method.

SiTe分子激发态光谱性质的理论研究

采用多参考组态相互作用(MRCI)的方法研究了Si Te分子的电子结构,获得18个Λ-S态的势能曲线.基于势能曲线(PECs)通过数值积分方法获得电子态的光谱常数.计算Si Te分子的电偶极矩(PDMs)并分析电子组态的变化对电偶极矩的影响.此外,计算得到的势能曲线表明,11Π和13Π态与附近的5个电子态(13Σ^(+),13Δ,11Σ^(-),13Σ^(-),11Δ)在16500~27400 cm^(-1)的能量区域内密集分布,邻近的电子态对13Π态有明显的扰动作用.通过11Π和13Π态的自旋-轨道耦合矩阵元,分析电子组态与自旋-轨道耦合矩阵元的关系.最后,计算了SiT e分子21Σ^(+)-X1Σ^(+),13Π-13Δ,11Π-X1Σ^(+),13Π-13Σ^(-)和13^(+)Σ^(-)13Π的跃迁偶极矩(TDM)以及11Π-X1Σ^(+)和21Σ^(+)-X1Σ^(+)的辐射寿命.

基于d电子理论的Ti-Nb-Cu三元形状记忆合金性能优化

基于d电子理论设计Ti-Nb-Cu形状记忆合金的相组成,以优化其性能。XRD分析和TEM观察表明,Cu添加导致键级(Bo)和金属d轨道能级(Md)值减小,从而使相组成发生演变。随着Cu含量的增加,相组成的变化可以总结如下:β+α"→β+ω→β+α"+ω→β。随着Cu含量的增加,Ti-Nb-Cu形状记忆合金的屈服强度、极限抗拉强度和伸长率均呈先增大后减小的趋势。通过优化Cu合金元素含量,Ti-Nb-Cu形状记忆合金具有优异的力学性能,其屈服强度为528 MPa,极限抗拉强度为742 MPa,这主要归因于固溶强化、晶粒细化以及析出强化的综合作用。

110 kV智能变电站综合自动化系统改造方案设计与研究

与常规变电站相比,智能变电站综合自动化系统改造时存在公共设备安全隔离、新旧装置通讯配合等危险点管控问题。针对这些问题,以某110 kV智能变电站为例,提出“三阶段停电”方案,对智能电子设备配置下装方案、综合自动化系统改造危险点等进行分析,以规避施工过程中的风险,为后续220 kV智能变电站综合自动化系统改造提供借鉴。

Unveiling the geometric site dependent activity of spinel Co_(3)O_(4)for electrocatalytic chlorine evolution reaction

Spinel cobalt oxide(Co_(3)O_(4)),consisting of tetrahedral Co^(2+)(CoTd)and octahedral Co^(3+)(CoOh),is considered as promising earth-abundant electrocatalyst for chlorine evolution reaction(CER).Identifying the catalytic contribution of geometric Co site in the electrocatalytic CER plays a pivotal role to precisely modulate electronic configuration of active Co sites to boost CER.Herein,combining density functional theory calculations and experiment results assisted with operando analysis,we found that the Co_(Oh) site acts as the main active site for CER in spinel Co_(3)O_(4),which shows better Cl^(-)adsorption and more moderate intermediate adsorption toward CER than CoTd site,and does not undergo redox transition under CER condition at applied potentials.Guided by above findings,the oxygen vacancies were further introduced into the Co_(3)O_(4) to precisely manipulate the electronic configuration of Co_(Oh) to boost Cl^(-)adsorption and optimize the reaction path of CER and thus to enhance the intrinsic CER activity significantly.Our work figures out the importance of geometric configuration dependent CER activity,shedding light on the rational design of advanced electrocatalysts from geometric configuration optimization at the atomic level.

Absolute configuration of Buagafuran:An experimental and theoretical electronic circular dichroism study

Buagafuran is a novel drug candidate derived from natural product.Its absolute configuration has been confirmed by electronic circular dichroism combined with modern quantum-chemical calculation using time-dependent density functional theory.The predicted UV absorbance peak is underestimated by several nanometers compared with the experimental data.The applicability of empirical rule for the C=C-C-O system in Buagafuran has also been discussed.Our results show that electronic circular dichroism could be a useful tool for the absolute configuration assignment of chiral drugs,especially for the oily or semisolid substances,whose crystal structures are impossible to obtain.

浅析电子通信信号的干扰与控制

本文以电子通信信号的干扰与控制作为研究主题,首先从电子通信和电子通信信号两个方面展开相应的概念解读,进而从3个方面阐述电子通信信号的主要干扰类型,并结合实际指出产生干扰的原因,最后有针对性地从尽可能的消除硬件干扰、注意规避电子设备产生的干扰以及有层次的排查和解决同频干扰3个方面提出电子通信信号受到干扰的控制措施,希望能进一步保障我国电子通信信号质量。

可配置化卫星电子学半物理仿真系统设计与实现

为提高商业卫星星务软件的研制效率,减少卫星部件产品研制进度对整星软件开发的影响,便于卫星批量研制生产,提出一种可配置化卫星电子学半物理仿真系统设计。该电子学仿真系统由中心计算机、通信接口部分、星上电子学单机仿真部分和系统测试部分组成,利用可配置化、通用化、高集成化和模块化设计思想,开发具有可配置化特点的中心计算机、灵活可配置多功能特点的星上电子学单机仿真模拟器、可重构的通信接口和智能化系统测试接口,集成一套可配置化卫星电子学仿真系统。以此仿真系统进行星务软件的开发测试实验,结果表明,该系统能够为整星提供半物理仿真实验数据,满足不同型号卫星星务软件的研制需求,同时具备接入实物单机进行仿真测试功能。该电子学仿真系统能够提高星务软件的研制效率,有利于卫星批量生产,具有重要的工程研制意义。

Relation between standard entropies of elements and electronic configurations

A close relationship has been found between the standard entropies of elements and their electronic configurations. Based on the positions of elements in the periodic table and the variation in the standard entropies of elements, the standard entropies of elements can be expressed as the sum of two functions: S0= f（N） + f（E）, where S0 is the standard entropy of an element, N the principal quantum number, and E the number of outermost electrons. And the specific formula is S0=99.05N1/3 + [0.32（sp - 4）4 - 119.76] + [- 56.56N1/3 + 0.70（sd - 7）2 - 42.12]+[- 11.95 ×10-4（df- 8）4-105.70], where sp, sd, df are the numbers of the outermost electrons in the sp, sd, df regions of the periodic table, respectively. This formula helps reveal the essence of the standard entropies of elements and deepens our understanding of the thermodynamic characteristics of compounds.