WC-10Co cemented carbides with finer WC and narrower grain size distributions are produced by using(Cr,V)_(2)(C,N)as grain growth inhibitors.As a result,with the increase of(Cr_(0.9),V_(0.1))_(2)(C,N)and(V_(0.9),Cr_(0...WC-10Co cemented carbides with finer WC and narrower grain size distributions are produced by using(Cr,V)_(2)(C,N)as grain growth inhibitors.As a result,with the increase of(Cr_(0.9),V_(0.1))_(2)(C,N)and(V_(0.9),Cr_(0.1))_(2)(C,N),the grains size of WC and mean free path of Co phase decrease,and adjacency of WC increases.Refinement and homogenization of grains enhance the transverse rupture strength(TRS)and the hardness.Meanwhile,the deflection and bridging of cracks keep the fracture toughness at a respectable level.The WC-10Co-0.6(Cr_(0.9),V_(0.1))_(2)(C,N)-0.025(V_(0.9),Cr_(0.1))_(2)(C,N)cemented carbides exhibit excellent comprehensive mechanical properties with the TRS of 4602.6 MPa,hardness of 1835 kg/mm^(2),and fracture toughness of 10.39 MPa·m^(1/2),respectively.However,the large pores are caused by excess N larger than 0.03 wt%and deteriorates the mechanical properties.We provide a new approach to WC-Co cemented carbides preparation with a narrow grain size distribution by adding novel grain growth inhibitors.展开更多
The high-pressure diagram of V–N compounds is enriched by proposed seven new stable high-pressure phases.The P-1-VN_4with the armchair N-rich structure may be quenched to ambient conditions.The formed N–N covalent b...The high-pressure diagram of V–N compounds is enriched by proposed seven new stable high-pressure phases.The P-1-VN_4with the armchair N-rich structure may be quenched to ambient conditions.The formed N–N covalent bond plays an important role for the structural stability of N-chain.The charge transfer results in a V–N ionic bond interaction,which further improves the stability of N-chain structure.The P-1-VN_4,P4mnc-VN_8,and Immm-VN_(10)with the outstanding detonation properties have potential application in explosive field.展开更多
Ti-6 Al-4 V-Si3 N4 composites were effectively fabricated by spark plasma sintering(SPS) technique. The addition of Si_3 N_4 on Ti-6 AI-4 V was varied from 5% to 15%(wt fraction). The effect of Si_3 N_4 addition on th...Ti-6 Al-4 V-Si3 N4 composites were effectively fabricated by spark plasma sintering(SPS) technique. The addition of Si_3 N_4 on Ti-6 AI-4 V was varied from 5% to 15%(wt fraction). The effect of Si_3 N_4 addition on the densification, microstructure, and microhardness and corrosion behaviour of Ti-6 Al-4 V was investigated.An increase in microhardness value was recorded from 325.46 HV_(0.1) to 585.73 HV_(0.1). X-ray diffraction(XRD) analysis showed that the intensity of diffraction peaks of Si3 N4 phase in the composites increased.The sintered Ti-6 Al-4 V reinforced with Si_3 N_4 compacts revealed the non-existence of intermediate phases, such as TiSi_2(titanium silicide) which was expected. SEM analysis of the spark plasma sintered composites revealed a and β phase microstructures in Ti-6 Al-4 V with uniform distribution of Si3 N4 particulates in the matrix. The corrosion resistance property of the material was improved by the addition of Si_3 N_4 from 0.986629 mm/year to 0.030547 mm/year.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
Objective. The goal of this paper is to investigate the relationship between the N-glycosylation of acetylglucosaminyltransferase V(Glc NAcT-V) and its activity and to know which site among the 6 N-glycosylation sites...Objective. The goal of this paper is to investigate the relationship between the N-glycosylation of acetylglucosaminyltransferase V(Glc NAcT-V) and its activity and to know which site among the 6 N-glycosylation sites in the GlcNAcT-V gene is the most important. Methods.Wild type of GlcNAcTV was transfected into COS7 cells and its activity was measured 48 h later. The first site (Asn 110) was mutated with sitedirected mutagenesis and transfected into COS7 cells. Results. It was found that after the cells were added tunicamycin(TM, 1 μ g/ml), the activity was 117% of the wild type. The activity of the cells with mutating GlcNAcTV was about 120% of the wild type RTPCR showed that there was no significant change in mRNA expression among the three groups. Conclusion.The Nglycosylation is important for its activity. Our results suggest that the Nlinked carbohydrates on GlcNAcTV are required for the posttranscriptional activity of the enzyme.展开更多
基金Funded by the 2021 Strategic Cooperation Project between Sichuan University and The People's Government of Zigong(No.2021CDZG-1)Major Science and Technology Research Projects of Panxi,Sichuan Province(No.2022PXZB-04)。
文摘WC-10Co cemented carbides with finer WC and narrower grain size distributions are produced by using(Cr,V)_(2)(C,N)as grain growth inhibitors.As a result,with the increase of(Cr_(0.9),V_(0.1))_(2)(C,N)and(V_(0.9),Cr_(0.1))_(2)(C,N),the grains size of WC and mean free path of Co phase decrease,and adjacency of WC increases.Refinement and homogenization of grains enhance the transverse rupture strength(TRS)and the hardness.Meanwhile,the deflection and bridging of cracks keep the fracture toughness at a respectable level.The WC-10Co-0.6(Cr_(0.9),V_(0.1))_(2)(C,N)-0.025(V_(0.9),Cr_(0.1))_(2)(C,N)cemented carbides exhibit excellent comprehensive mechanical properties with the TRS of 4602.6 MPa,hardness of 1835 kg/mm^(2),and fracture toughness of 10.39 MPa·m^(1/2),respectively.However,the large pores are caused by excess N larger than 0.03 wt%and deteriorates the mechanical properties.We provide a new approach to WC-Co cemented carbides preparation with a narrow grain size distribution by adding novel grain growth inhibitors.
文摘The high-pressure diagram of V–N compounds is enriched by proposed seven new stable high-pressure phases.The P-1-VN_4with the armchair N-rich structure may be quenched to ambient conditions.The formed N–N covalent bond plays an important role for the structural stability of N-chain.The charge transfer results in a V–N ionic bond interaction,which further improves the stability of N-chain structure.The P-1-VN_4,P4mnc-VN_8,and Immm-VN_(10)with the outstanding detonation properties have potential application in explosive field.
基金financial support from National Research Foundation(NRF), Pretoria, South Africa
文摘Ti-6 Al-4 V-Si3 N4 composites were effectively fabricated by spark plasma sintering(SPS) technique. The addition of Si_3 N_4 on Ti-6 AI-4 V was varied from 5% to 15%(wt fraction). The effect of Si_3 N_4 addition on the densification, microstructure, and microhardness and corrosion behaviour of Ti-6 Al-4 V was investigated.An increase in microhardness value was recorded from 325.46 HV_(0.1) to 585.73 HV_(0.1). X-ray diffraction(XRD) analysis showed that the intensity of diffraction peaks of Si3 N4 phase in the composites increased.The sintered Ti-6 Al-4 V reinforced with Si_3 N_4 compacts revealed the non-existence of intermediate phases, such as TiSi_2(titanium silicide) which was expected. SEM analysis of the spark plasma sintered composites revealed a and β phase microstructures in Ti-6 Al-4 V with uniform distribution of Si3 N4 particulates in the matrix. The corrosion resistance property of the material was improved by the addition of Si_3 N_4 from 0.986629 mm/year to 0.030547 mm/year.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
文摘Objective. The goal of this paper is to investigate the relationship between the N-glycosylation of acetylglucosaminyltransferase V(Glc NAcT-V) and its activity and to know which site among the 6 N-glycosylation sites in the GlcNAcT-V gene is the most important. Methods.Wild type of GlcNAcTV was transfected into COS7 cells and its activity was measured 48 h later. The first site (Asn 110) was mutated with sitedirected mutagenesis and transfected into COS7 cells. Results. It was found that after the cells were added tunicamycin(TM, 1 μ g/ml), the activity was 117% of the wild type. The activity of the cells with mutating GlcNAcTV was about 120% of the wild type RTPCR showed that there was no significant change in mRNA expression among the three groups. Conclusion.The Nglycosylation is important for its activity. Our results suggest that the Nlinked carbohydrates on GlcNAcTV are required for the posttranscriptional activity of the enzyme.
