The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is f...The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib(△Ib) are proportional to variations of Nit (△Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.展开更多
电池的直流内阻是电池内部离子电阻与电子电阻之和。它决定电池功率特性,同时也反映电池的老化状况与一致性,因此对于电池的外特性建模与应用非常重要。该文提出了一种基于电池恒流外特性的直流内阻测试方法。该方法将不同恒流工况下的...电池的直流内阻是电池内部离子电阻与电子电阻之和。它决定电池功率特性,同时也反映电池的老化状况与一致性,因此对于电池的外特性建模与应用非常重要。该文提出了一种基于电池恒流外特性的直流内阻测试方法。该方法将不同恒流工况下的电池荷电状态(state of charge,SOC)变化过程归一化,从而能够利用恒流充放电曲线来获取不同工作电流及SOC条件下的直流内阻。该方法在保证测试精度的同时比已有方法更加简便。展开更多
文摘The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib(△Ib) are proportional to variations of Nit (△Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.
文摘电池的直流内阻是电池内部离子电阻与电子电阻之和。它决定电池功率特性,同时也反映电池的老化状况与一致性,因此对于电池的外特性建模与应用非常重要。该文提出了一种基于电池恒流外特性的直流内阻测试方法。该方法将不同恒流工况下的电池荷电状态(state of charge,SOC)变化过程归一化,从而能够利用恒流充放电曲线来获取不同工作电流及SOC条件下的直流内阻。该方法在保证测试精度的同时比已有方法更加简便。