Impact of source and drain contact thickness on the performance of organic thin film transistors

This paper analyzes the impact of source（ts） and drain（td） contact thicknesses on top contact（TC） and bottom contact（BC） organic thin film transistors（OTFTs） with a gate in the bottom, using a benchmarked industry standard Atlas 2-D numerical device simulator. The parameters including drive current（Ids）, mobility（μ）, threshold voltage（Vt）and current on-off ratio（ION/IOFF） are analyzed from the device physics point of view on different electrode thicknesses, ranging from infinitesimal to 50 nm, for both top and bottom contact structures. Observations demonstrate that the performance of the BC structure is more affected by scaling of ts=din comparison to its counterpart. In the linear region, the mobility is almost constant at all the values of ts=dfor both structures. However,an increment of 18% and 83% in saturation region mobility is found for TC andBC structures, respectively with scaling down ts=dfrom 50–0 nm. Besides this, the current on-off ratio increases more sharply in the BC structure.This analysis simplifies a number of issues related to the design and fabrication of organic material based devices and circuits.

Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al_(0.3)Ga_(0.7)N/GaN heterostructures

Ni/Au Schottky contacts with thicknesses of either 50（？）/50（？） or 600（？）/2000（？） were deposited on strained Al_（0.3）Ga_（0.7）N/GaN heterostructures.Using the measured C-V curves and I-V characteristics at room temperature,the calculated density of the two-dimensional electron-gas（2DEG） of the 600（？）/2000（？） thick Ni/Au Schottky contact is about 9.13×10^（12） cm^（-2） and that of the 50（？）/50（？） thick Ni/Au Schottky contact is only about 4.77×10^（12） cm^（-2）.The saturated current increases from 60.88 to 86.34 mA at a bias of 20 V as the thickness of the Ni/Au Schottky contact increases from 50（？）/50（？） to 600 A/2000 A.By self-consistently solving Schrodinger＇s and Poisson＇s equations,the polarization charge sheet density of the two samples was calculated,and the calculated results show that the polarization in the AlGaN barrier layer for the thick Ni/Au Schottky contact is stronger than the thin one.Thus,we attribute the results to the increased biaxial tensile stress in the Al_（0.3）Ga_（0.7）N barrier layer induced by the 600（？）/2000（？） thick Ni/Au Schottky contact.

Simulation Studies on the Settlement of Composite Foundation with Contact Element of Zero Thickness

The various factors influencing the settlement of composite foundation have been more completely studied through numerical simulation. The influence on the settlement of composite foundation of the geometry and mechanical properties of the pile, soil, cushion, and the interface between pile and soil have been investigated through computer simulation, in which the contact elements with zero thickness are used. Some valuable conclusions for the settlement of composite foundation have been obtained: (1) The method using the contact element of zero thickness is successful when used in the simulation of the settlement of composite foundation; (2) Among the factors influencing the settlement of composite foundation, the compression modulus of the soil is the largest, and the cohesion of the soil is the second largest; (3) The effects on settlement of the internal friction angle of the soil, the elastic modulus, the radius, and the length of the pile, and the elestic modulus of the cushion are also more obvious.