<div style="text-align:justify;"> A scheme of frequency sweep linearization of semiconductor lasers using a feed-back loop based on amplitude-frequency response is demonstrated in this paper. The beat ...<div style="text-align:justify;"> A scheme of frequency sweep linearization of semiconductor lasers using a feed-back loop based on amplitude-frequency response is demonstrated in this paper. The beat frequency signal is obtained by self-heterodyne detection. The frequency changes are converted to the envelope of beat frequency signal after amplitude-frequency response. The active frequency sweep linearization is realized by feeding envelope deviations back to the drive currents of the lasers by a feedback loop. A simulation model is built to verify this scheme by Simulink. This scheme does not need high-performance, expensive lasers, complex linearization or tedious post-processing processes, which are of great significance for related applications. </div>展开更多
An all-solid-state quasi-continuous-wave dispersion cavity tunable Ti：sapphire laser pumped by a laser diode pumped frequency-doubled Nd：YAG laser is reported. Using a dense flint glass prism as the dispersion eleme...An all-solid-state quasi-continuous-wave dispersion cavity tunable Ti：sapphire laser pumped by a laser diode pumped frequency-doubled Nd：YAG laser is reported. Using a dense flint glass prism as the dispersion element, a tuning range from 730 to 880 nm with the tinewidth of 3 nm and the pulse width of 17.2 ns was obtained. The maximum output power of this laser system was 5.6 W at 786.3 nm corresponding to an optical-to-optical conversion efficiency of 25.5% under the pump power of 22 W.展开更多
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots （QDs） embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW...Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots （QDs） embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 μm for a 20-μm ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy （MBE） growth conditions, the QD density per layer is raised to 4 × 10^10 cm^-2. The laser keeps lasing at ground state until the temperature reaches 65 ℃.展开更多
We experimentally demonstrate a novel multi-wavelength continuous wave (CW) optical source with precise 25-GHz spacing based on the longitudinal mode-carving of a supercontinuum (SC) spectrum. The CW light was modulat...We experimentally demonstrate a novel multi-wavelength continuous wave (CW) optical source with precise 25-GHz spacing based on the longitudinal mode-carving of a supercontinuum (SC) spectrum. The CW light was modulated with a 10-Gb/s non-return zero (NRZ) format. The experimental results show that the multiwavelength CW optical source is promising for dense wavelength division multiplexing (DWDM) systems.展开更多
文摘<div style="text-align:justify;"> A scheme of frequency sweep linearization of semiconductor lasers using a feed-back loop based on amplitude-frequency response is demonstrated in this paper. The beat frequency signal is obtained by self-heterodyne detection. The frequency changes are converted to the envelope of beat frequency signal after amplitude-frequency response. The active frequency sweep linearization is realized by feeding envelope deviations back to the drive currents of the lasers by a feedback loop. A simulation model is built to verify this scheme by Simulink. This scheme does not need high-performance, expensive lasers, complex linearization or tedious post-processing processes, which are of great significance for related applications. </div>
基金This work was supported by the National Natural Sci- ence Foundation of China under Grant No. 60278001.
文摘An all-solid-state quasi-continuous-wave dispersion cavity tunable Ti：sapphire laser pumped by a laser diode pumped frequency-doubled Nd：YAG laser is reported. Using a dense flint glass prism as the dispersion element, a tuning range from 730 to 880 nm with the tinewidth of 3 nm and the pulse width of 17.2 ns was obtained. The maximum output power of this laser system was 5.6 W at 786.3 nm corresponding to an optical-to-optical conversion efficiency of 25.5% under the pump power of 22 W.
基金This work was supported by the Major State Key Basic Research Program (No. TG2000036603) the National "863" Program of China (No. 2002AA312080) and the National Natural Science Foundation of China (No. 60137020).
文摘Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots （QDs） embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 μm for a 20-μm ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy （MBE） growth conditions, the QD density per layer is raised to 4 × 10^10 cm^-2. The laser keeps lasing at ground state until the temperature reaches 65 ℃.
基金This work was supported by the National Hi-Tech project(863)project(No.2002AA122033)
文摘We experimentally demonstrate a novel multi-wavelength continuous wave (CW) optical source with precise 25-GHz spacing based on the longitudinal mode-carving of a supercontinuum (SC) spectrum. The CW light was modulated with a 10-Gb/s non-return zero (NRZ) format. The experimental results show that the multiwavelength CW optical source is promising for dense wavelength division multiplexing (DWDM) systems.
