This paper investigates the effects of material and dimension parameters on the frequency splitting,frequency drift,and quality factor(Q)of aluminium nitride(AlN)-on-n-doped/pure silicon(Si)microelectromechanical syst...This paper investigates the effects of material and dimension parameters on the frequency splitting,frequency drift,and quality factor(Q)of aluminium nitride(AlN)-on-n-doped/pure silicon(Si)microelectromechanical systems(MEMS)disk resonators through analysis and simulation.These parameters include the crystallographic orientation,dopant,substrate thickness,and temperature.The resonators operate in the elliptical,higher order,and flexural modes.The simulation results show that i)the turnover points of the resonators exist at 55°C,-50°C,40°C,and-10°C for n-doped silicon with the doping concentration of 2×1019 cm-3 and the Si thickness of 3.5μm,and these points are shifted with the substrate thickness and mode variations;ii)compared with pure Si,the modal-frequency splitting for n-doped Si is higher and increases from 5%to 10%for all studied modes;iii)Q of the resonators depends on the temperature and dopant.Therefore,the turnover,modal-frequency splitting,and Q of the resonators depend on the thickness and material of the substrate and the temperature.This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.展开更多
Over the past several decades, the technology of micro-electromechanical system（MEMS） has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next genera...Over the past several decades, the technology of micro-electromechanical system（MEMS） has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride（AlN） MEMS contour-mode resonator（CMR）has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit（IC） technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.展开更多
文摘This paper investigates the effects of material and dimension parameters on the frequency splitting,frequency drift,and quality factor(Q)of aluminium nitride(AlN)-on-n-doped/pure silicon(Si)microelectromechanical systems(MEMS)disk resonators through analysis and simulation.These parameters include the crystallographic orientation,dopant,substrate thickness,and temperature.The resonators operate in the elliptical,higher order,and flexural modes.The simulation results show that i)the turnover points of the resonators exist at 55°C,-50°C,40°C,and-10°C for n-doped silicon with the doping concentration of 2×1019 cm-3 and the Si thickness of 3.5μm,and these points are shifted with the substrate thickness and mode variations;ii)compared with pure Si,the modal-frequency splitting for n-doped Si is higher and increases from 5%to 10%for all studied modes;iii)Q of the resonators depends on the temperature and dopant.Therefore,the turnover,modal-frequency splitting,and Q of the resonators depend on the thickness and material of the substrate and the temperature.This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.
基金Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130)the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base’s Financial Support (No. Z131103002813070)the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32)
文摘Over the past several decades, the technology of micro-electromechanical system（MEMS） has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride（AlN） MEMS contour-mode resonator（CMR）has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit（IC） technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.
