The effects of rare earth Ce on the microstructure and mechanical properties of impure copper containing Pb were investigated using OM,SEM,EPMA,TEM and tensile testing.TEM and EDS analysis reveal that spherical CePb3 ...The effects of rare earth Ce on the microstructure and mechanical properties of impure copper containing Pb were investigated using OM,SEM,EPMA,TEM and tensile testing.TEM and EDS analysis reveal that spherical CePb3 particles form after Ce addition.CePb3 particles,with average size of^3.6μm,homogenously distribute in the Cu matrix.Due to small lattice misfit(~4.62%)with Cu matrix,CePb3 particles can act as effective nucleation sites beneficial to the grain refinement.Pb at grain boundaries seriously deteriorates the mechanical properties of Cu.The tensile strength and the elongation of Cu-0.1 Pb are decreased by 43.1%and 56.7%compared with those of pure copper,respectively.Ce can purify grain boundaries,cause the precipitation of CePb3 particles and refine grain sizes,which contribute to significant improvement of the mechanical properties of Cu.Compared with Cu-0.1Pb,the tensile strength(179 MPa)and the elongation(38.5%)of Cu-0.1Pb-0.3Ce are increased by 117.6%and 151.6%,respectively.展开更多
Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental ...Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Ω·cm is obtained when the sample is treated at 1200℃ for 2 h with the surface concentration of the copper dopant source being 1.83×10^7mol/cm^2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K.展开更多
基金Projects(ZR2018MEE005,ZR2018MEE016)supported by the Natural Science Foundation of Shandong Province,ChinaProject(J18KA059)supported by the Higher Educational Science and Technology Program of Shandong Province,ChinaProject(HJ16B01)supported by the Doctoral Fund of Yantai University,China。
文摘The effects of rare earth Ce on the microstructure and mechanical properties of impure copper containing Pb were investigated using OM,SEM,EPMA,TEM and tensile testing.TEM and EDS analysis reveal that spherical CePb3 particles form after Ce addition.CePb3 particles,with average size of^3.6μm,homogenously distribute in the Cu matrix.Due to small lattice misfit(~4.62%)with Cu matrix,CePb3 particles can act as effective nucleation sites beneficial to the grain refinement.Pb at grain boundaries seriously deteriorates the mechanical properties of Cu.The tensile strength and the elongation of Cu-0.1 Pb are decreased by 43.1%and 56.7%compared with those of pure copper,respectively.Ce can purify grain boundaries,cause the precipitation of CePb3 particles and refine grain sizes,which contribute to significant improvement of the mechanical properties of Cu.Compared with Cu-0.1Pb,the tensile strength(179 MPa)and the elongation(38.5%)of Cu-0.1Pb-0.3Ce are increased by 117.6%and 151.6%,respectively.
基金Project supported by the National High Technology Research and Development Program of China(No.2012AA091102)the National Natural Science Foundation of Xinjiang(No.2010211B24)
文摘Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Ω·cm is obtained when the sample is treated at 1200℃ for 2 h with the surface concentration of the copper dopant source being 1.83×10^7mol/cm^2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K.
