Characterization of the arrangement feature of copper interconnects by Moir inversion method

This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication.

Finite element simulation of hydrostatic stress in copper interconnects

This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding （SIV） in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.

Interface Reaction of SiO_2/Ta and Its Influence on Cu Diffusion

Ta/NiFe film is deposited on Si substrate precoated with SiO_2 by magnetron sputtering.SiO_2/Ta interface and Ta_5Si_3 standard sample are investigated by using X-ray photoelectron spectroscopy (XPS) and peak decomposition technique.The results show that there is a thermodynamically favorable reaction at the SiO_2/Ta interface:37Ta+15SiO_2=5Ta_5Si_3+6Ta_2O_5.The more stable products Ta_5Si_3 and Ta_2O_5 may be beneficial to stop the diffusion of Cu into SiO_2.

Finite Element Modeling of Hydrostatic Stress Distribution in Copper Dual-damascene Interconnects

Hydrostatic stresses of copper dual-damascene interconnects are calculated by a commercial finite element software in this paper.The analytical work is performed to examine the effects of different low-k(k is permittivity)dielectrics,barrier layer and aspect ratio of via on hydrostatic stress distribution in the copper interconnects.The results of calculation indicate that the hydrostatic stresses are highly non-uniform throughout the copper interconnects and the highest tensile hydrostatic stress exists on the top interface of lower level interconnect near via.Both the high coefficient of thermal expansion and the low elastic modulus of the low-k dielectrics and barrier layer can decrease the highest hydrostatic stress on the top interface,which can improve the reliability of the copper interconnects.

The stability of a novel weakly alkaline slurry of copper interconnection CMP for GLSI

Chemical mechanical polishing（CMP） is one of the important machining procedures of multilayered copper interconnection for GLSI, meanwhile polishing slurry is a critical factor for realizing the high polishing performance such as high planarization efficiency, low surface roughness. The effect of slurry components such as abrasive（colloidal silica）, complexing agent（glycine）, inhibitor（BTA） and oxidizing agent（H_2O_2） on the stability of the novel weakly alkaline slurry of copper interconnection CMP for GLSI was investigated in this paper. First, the synergistic and competitive relationship of them in a peroxide-based weakly alkaline slurry during the copper CMP process was studied and the stability mechanism was put forward. Then 1 wt% colloidal silica, 2.5 wt% glycine,200 ppm BTA, 20 m L/L H_2O_2 had been selected as the appropriate concentration to prepare copper slurry, and using such slurry the copper blanket wafer was polished. From the variations of copper removal rate, root-mean square roughness（Sq） value with the setting time, it indicates that the working-life of the novel weakly alkaline slurry can reach more than 7 days, which satisfies the requirement of microelectronics further development.