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题名借鉴德国职教经验打造中国高职品牌
被引量：15
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作者
吕景泉
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机构
天津中德职业技术学院
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出处
《天津成人高等学校联合学报》
2004年第5期6-10,共5页
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文摘
理念、人员(师资)、设施和网络是优秀学府四个要素,天津中德职业技术学院在多年借鉴德国职教经验从事高职办学实践的基础上,进行了构建独具特色的高职课程结构、理论和实践教学体系、教学模式方面的尝试,探索了高职师资队伍建设、高职实践教学基地建设和高职院校网络联系系统建设的相关原则和方式方法。
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关键词
德国
高等职业技术教育
中国
品牌建设
课程结构
实践教学
师资建设
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Keywords
idea
personnel
facility
network
course structure on 4 levels 2 section
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分类号
G718.5
[文化科学—职业技术教育学]
G719.516
[文化科学—职业技术教育学]
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题名建设全国技能型人才培养基地打造中国职教品牌
被引量：7
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作者
吕景泉
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机构
天津中德职业技术学院
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出处
《天津职业院校联合学报》
2006年第1期5-12,共8页
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文摘
结合全国职业教育工作会议精神,回顾天津职业教育发展的历程,指明中德职业技术学院在落实以就业为导向,加强专业建设;以能力为本位,加强课程体系和教材建设;以技能为中心,加强实训基地和师资队伍建设;以职业道德为核心,加强学生思想政治工作中的实践的重要性。
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关键词
“四层两段一贯穿”的课程结构
“相互平行
融合交叉”的理论和实践教学体系
核心技术一体化
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Keywords
course structure on 4 levels 2 sections
the theory of parallelism and incorporation and practice-oriented teaching method
the integration of core technology skill
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分类号
G719.21
[文化科学—职业技术教育学]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量：5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1004-4213(2012)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1].The diffraction limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-100nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.one wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1 SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1 Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1,ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1ε3S22+ε22S1S3)+(ε1ε2S2S3+ε2ε3S1S2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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