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New Technique:A low drift current reference based on PMOS temperature correction technology 被引量:1
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作者 Yi-die YE Le-nian HE Ya-dan SHEN 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2012年第12期937-943,共7页
A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchangi... A low drift current reference based on PMOS temperature correction technology is proposed.To achieve the minimum temperature coefficient(TC),the PMOS cascode current mirror is designed as a cross structure.By exchanging the bias for two layers of the self-biased PMOS cascode structure,the upper PMOS,which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure,is forced to work in the linear region.As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy,it was designed using a CSMC 1 μm 40 V BCD process.Simulation shows that the TC of the reference current was only 23.8×10 6 /°C over the temperature range of 40-120 °C under the typical condition. 展开更多
关键词 Current reference cross structure PMOS cascode Temperature coefficient Low drift
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