By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single cryst...By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random)were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.展开更多
基金funded by the Science Center of the National Science Foundation of China(Grant No.52088101)the National Natural Science Foundation of China(Grant Nos.11474342 and11174353)+2 种基金the National Key Research and Development Program of Chinathe Strategic Priority Research Program B of the Chinese Academy of Sciencessupported in part by the beamline 08U1A of SSRF。
文摘By employing scanning probe microscopy,conductive path and local oxygen-vacancy dynamics have been investigated in crosshatched La_(0.7)Sr_(0.3)MnO_(3) thin films grown onto flat and vicinal LaAlO_(3)(001)single crystal substrates.Consistent with prior studies,the crosshatch topography was observed first by dynamical force microscopy as the epi-stain started to release with increasing film thickness.Second,by using conductive atomic force microscopy(CAFM),conductive crosshatch and dots(locally aligned or random)were unravelled,however,not all of which necessarily coincided with that shown in the in situ atomic force microscopy.Furthermore,the current-voltage responses were probed by CAFM,revealing the occurrence of threshold and/or memristive switchings.Our results demonstrate that the resistive switching relies on the evolution of the local profile and concentration of oxygen vacancies,which,in the crosshatched films,are modulated by both the misfit and threading dislocations.
