In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried o...In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is～4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ～-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.展开更多
基金partially supported by the National Natural Science Foundation of China under Grant Nos.61674072,61565011,and 51304097
文摘In this Letter,we demonstrate a 1×4 low-crosstalk silicon photonics cascaded arrayed waveguide grating,which is fabricated on a silicon-on-insulator wafer with a 220-nm-thick top silicon layer and a 2μm buried oxide layer.The measured on-chip transmission loss of this cascaded arrayed waveguide grating is～4.0 dB,and the fiber-towaveguide coupling loss is 1.8 dB/facet.The measured channel spacing is 6.4 nm.The adjacent crosstalk by characterization is very low,only -33.2 dB.Compared to the normal single silicon photonics arrayed waveguide grating with a crosstalk of ～-12.5 dB,the crosstalk of more than 20 dB is dramatically improved in this cascaded device.
