Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in th...Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.展开更多
A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-...A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-efect transistors(MOSFETs),corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77 K.Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K.The SAR ADC is fabricated and verified by standard 0.35μm complementary metal oxide semiconductor(CMOS)process.At 77 K,measurement results show that signal to noise and distortion ratio(SNDR)is 54.74 dB and efective number of bits(ENOB)is 8.8 at the sampling rate of 500 kHz.The total circuit consumes 0.6 mW at 3.3 V power supply.展开更多
基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技...基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技术研究所0.35μm工艺条件下的PD SOI器件进行了建模和验证,结果显示所建立的模型与测试数据吻合,表明本文所提方法的准确性及有效性。展开更多
基金Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics(Grant No.U1230112)
文摘Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282 c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode＇s electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.
基金the National Major Scientific and Technological Special Project of China(No.2012ZX03004008)the Science and Technology Pillar Program of Tianjin(No.11ZCKFGX01400)
文摘A 10-bit 500 kHz low-power successive approximation register(SAR)analog-to-digital converter(ADC)for cryogenic infrared readout circuit is proposed.To improve the simulation accuracy of metal-oxidesemiconductor field-efect transistors(MOSFETs),corresponding modification in device model is presented on the basis of BSIM3v3 with parameter extraction at 77 K.Corresponding timing is adopted in comparator to eliminate the influence caused by abnormal performance of MOSFETs at 77 K.The SAR ADC is fabricated and verified by standard 0.35μm complementary metal oxide semiconductor(CMOS)process.At 77 K,measurement results show that signal to noise and distortion ratio(SNDR)is 54.74 dB and efective number of bits(ENOB)is 8.8 at the sampling rate of 500 kHz.The total circuit consumes 0.6 mW at 3.3 V power supply.
文摘基于BSIMSOI模型研究了深亚微米级部分耗尽型绝缘体上硅金属氧化物半导体场效应晶体管(PD SOI MOSFET)器件的自加热效应、体接触效应及浮体效应,并提出了PD SOI MOSFET的建模方法及相应的模型参数提取方法。根据上述方法对西安微电子技术研究所0.35μm工艺条件下的PD SOI器件进行了建模和验证,结果显示所建立的模型与测试数据吻合,表明本文所提方法的准确性及有效性。
