Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the p...Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.展开更多
基金Funded by the National Natural Science Foundation of China(No.51461135004)the Doctoral Fund of Ministry of Education Priority Development Project(No.20130143130002)+1 种基金the Key Technology Innovation Project of Hubei Province(2013AAA005)the Scientific Leadership training Program of Hubei Province
文摘Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.
