Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantati...Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.展开更多
Cubic boron nitride(CBN) micro powders and mixture of CBN micro powders with Al or Ti powders were fast heated at 1 300,1 400,1 450,1 500℃,and then kept for 5 min under spark plasma sintering (SPS).The obtained powde...Cubic boron nitride(CBN) micro powders and mixture of CBN micro powders with Al or Ti powders were fast heated at 1 300,1 400,1 450,1 500℃,and then kept for 5 min under spark plasma sintering (SPS).The obtained powders were analyzed with XRD.The results show that,simple CBN kept cubic structure after heated at 1 300℃;when the temperature rose to 1 400℃,some CBN was transformed into hexagonal structured boron nitride(hBN).As for CBN micro powders mixed with aluminum or titanium micro powders,the onset transforming temperature of CBN to hBN get raised.This results indicated that the structural transformation of boron nitride begun from the surface of CBN crystal particle,different coexist elements affect the surface situation of CBN particles.As the stabilities of CBN crystal particle surface improved,the onset structural transform temperature of CBN was also increased.展开更多
This paper investigates the procedure of cubic boron nitride （cBN） thin film delamination by Fourier-transform infrared （IR） spectroscopy. It finds that the apparent IR absorption peak area near 1380cm^-1 and 1073...This paper investigates the procedure of cubic boron nitride （cBN） thin film delamination by Fourier-transform infrared （IR） spectroscopy. It finds that the apparent IR absorption peak area near 1380cm^-1 and 1073 cm^-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN, respectively, increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation. The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination, which suggests that the relaxation of the turbostratic BN （tBN） layer from the compressed condition is also hysteretic to film delamination. Moreover, cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN（amorphous BN）/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.展开更多
Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasmaenhanced chemical vapour deposition. It was found that the introduction of 02 into the deposition system su...Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasmaenhanced chemical vapour deposition. It was found that the introduction of 02 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230- 1280 cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.展开更多
Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS a...Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.展开更多
Cubic boron nitride（c-BN） was synthesized through benzene thermal method at a lower temperature of （300℃） by selecting liquid（（C2H5）2O·）BF3 and Li3N as reactants. Hexagonal boron nitride（h-BN） and or...Cubic boron nitride（c-BN） was synthesized through benzene thermal method at a lower temperature of （300℃） by selecting liquid（（C2H5）2O·）BF3 and Li3N as reactants. Hexagonal boron nitride（h-BN） and orthorhombic boron nitride（o-BN） were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B—F can be broken. Compared with BBr3, liquid （C2H5）2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007)the Natural Science Foundation of Beijing, China (Grant No. 4072007)+2 种基金the Scientific Research Program of Beijing Municipal Commission of Education, China (Grant No.KM200910005018)the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, Chinathe Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality
文摘Cubic boron nitride （c-BN） thin films are deposited on p-type Si wafers using radio frequency （RF） sputtering and then doped by implanting S ions. Wile implantation energy of the ions is 19 keV, and the implantation dose is between 1015 ions/cm2 and 1016 ions/cm2. The doped c-BN thin films are then annealed at a temperature between 400℃ and 800℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.
基金support provided by Natural Science Foundation of Hebei Province(No.E 2006000226)
文摘Cubic boron nitride(CBN) micro powders and mixture of CBN micro powders with Al or Ti powders were fast heated at 1 300,1 400,1 450,1 500℃,and then kept for 5 min under spark plasma sintering (SPS).The obtained powders were analyzed with XRD.The results show that,simple CBN kept cubic structure after heated at 1 300℃;when the temperature rose to 1 400℃,some CBN was transformed into hexagonal structured boron nitride(hBN).As for CBN micro powders mixed with aluminum or titanium micro powders,the onset transforming temperature of CBN to hBN get raised.This results indicated that the structural transformation of boron nitride begun from the surface of CBN crystal particle,different coexist elements affect the surface situation of CBN particles.As the stabilities of CBN crystal particle surface improved,the onset structural transform temperature of CBN was also increased.
基金supported by the National Science Foundation of Zhejiang Province,China (Grant No Y405051)the Zhejiang Provincial Education Department,China (Grant No 20061365)the Education Ministry Scientific Research Startup Foundation for Returnee,China (Grant No 2007-24)
文摘This paper investigates the procedure of cubic boron nitride （cBN） thin film delamination by Fourier-transform infrared （IR） spectroscopy. It finds that the apparent IR absorption peak area near 1380cm^-1 and 1073 cm^-1 attributed to the B-N stretching vibration of sp2-bonded BN and the transverse optical phonon of cBN, respectively, increased up to 195% and 175% of the original peak area after film delamination induced compressive stress relaxation. The increase of IR absorption of sp2-bonded BN is found to be non-linear and hysteretic to film delamination, which suggests that the relaxation of the turbostratic BN （tBN） layer from the compressed condition is also hysteretic to film delamination. Moreover, cross-sectional transmission electron microscopic observations revealed that cBN film delamination is possible from near the aBN（amorphous BN）/tBN interface at least for films prepared by plasma-enhanced chemical vapour deposition.
基金Project supported by the National Natural Science Foundation of China (Grant No. 50772096)the Educational Department of Zhejiang Province, China (Grant No. 20061365)
文摘Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasmaenhanced chemical vapour deposition. It was found that the introduction of 02 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230- 1280 cm^-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.
基金National Natural Science Foundation ofChina(No.59971065)
文摘Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.
基金Projects(2027300750372006) supported by the National Natural Science Foundation of China
文摘Cubic boron nitride（c-BN） was synthesized through benzene thermal method at a lower temperature of （300℃） by selecting liquid（（C2H5）2O·）BF3 and Li3N as reactants. Hexagonal boron nitride（h-BN） and orthorhombic boron nitride（o-BN） were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B—F can be broken. Compared with BBr3, liquid （C2H5）2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.
