A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of ...A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.展开更多
We review and summarize the applications of the Grad-Shafranov(GS) reconstruction technique to space plasma structures in the Earth's magnetosphere and in the interplanetary space. We organize our presentations fo...We review and summarize the applications of the Grad-Shafranov(GS) reconstruction technique to space plasma structures in the Earth's magnetosphere and in the interplanetary space. We organize our presentations following the branches of the "academic family tree" rooted on Prof. Bengt U. ? Sonnerup, the inventor of the GS method. Special attentions are paid to validations of the GS reconstruction results via(1) the direct validation by co-spatial in-situ measurements among multiple spacecraft, and(2) indirect validation by implications and interpretations of the physical connection between the structures reconstructed and other related processes. For the latter, the inter-comparison and interconnection between the large-scale magnetic flux ropes(i.e., Magnetic Clouds) in the solar wind and their solar source properties are presented. In addition, we also summarize various GS-type(or-like) reconstruction and an extension of the GS technique to toroidal geometry. In particular,we point to a possible advancement with added complexity of "helical symmetry" and mixed helicity, in the hope of stimulating interest in future development. We close by offering some thoughts on appreciating the scientific merit of GS reconstruction in general.展开更多
文摘A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.
基金supported by National Aeronautics and Space Administration (NASA) and National Science Foundation (NSF) (Grants Nos. AGS-1062050, NNG04GF47G, NNG06GD41G, NNX12AF97G, NNX12AH50G, NNH13ZDA001N, and NNX14AF41G)
文摘We review and summarize the applications of the Grad-Shafranov(GS) reconstruction technique to space plasma structures in the Earth's magnetosphere and in the interplanetary space. We organize our presentations following the branches of the "academic family tree" rooted on Prof. Bengt U. ? Sonnerup, the inventor of the GS method. Special attentions are paid to validations of the GS reconstruction results via(1) the direct validation by co-spatial in-situ measurements among multiple spacecraft, and(2) indirect validation by implications and interpretations of the physical connection between the structures reconstructed and other related processes. For the latter, the inter-comparison and interconnection between the large-scale magnetic flux ropes(i.e., Magnetic Clouds) in the solar wind and their solar source properties are presented. In addition, we also summarize various GS-type(or-like) reconstruction and an extension of the GS technique to toroidal geometry. In particular,we point to a possible advancement with added complexity of "helical symmetry" and mixed helicity, in the hope of stimulating interest in future development. We close by offering some thoughts on appreciating the scientific merit of GS reconstruction in general.