Precision measurement and suppression of low-frequency noise in a current source with double-resonance alignment magnetometers

Low-noise high-stability current sources have essential applications such as neutron electric dipole moment measurement and high-stability magnetometers. Previous studies mainly focused on frequency noise above 0.1 Hz while less on the low-frequency noise/drift. We use double resonance alignment magnetometers(DRAMs) to measure and suppress the low-frequency noise of a homemade current source(CS) board. The CS board noise level is suppressed by about 10 times in the range of 0.001-0.1 Hz and is reduced to 100 n A/√Hz at 0.001 Hz. The relative stability of CS board can reach2.2 × 10^(-8). In addition, the DRAM shows a better resolution and accuracy than a commercial 7.5-digit multimeter when measuring our homemade CS board. Further, by combining the DRAM with a double resonance orientation magnetometer,we may realize a low-noise CS in the 0.001-1000 Hz range.

Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Fihn Transistors

The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.

Shot noise in electron transport through a double quantum dot:a master equation approach

We study shot noise in tunneling current through a double quantum dot connected to two electric leads. We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics. The approach based on the occupation-state basis, despite being widely used in many previous studies, is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots. In contrast, the calculations using the eigenstate basis are valid for an arbitrary interdot coupling. Using realistic model parameters, we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small. Furthermore, properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.

Performance enhancement of CMOS terahertz detector by drain current

In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors（MOSFETs） both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power（NEP） with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection.

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.

Quantization of the radiation field in an anisotropic dielectric medium

There are both loss and dispersion characteristics for most dielectric media. In quantum theory the loss in medium is generally described by Langevin force in the Langevin noise （LN） scheme by which the quantization of the radiation field in various homogeneous absorbing dielectrics can be successfully actualized. However, it is invalid for the anisotropic dispersion medium. This paper extends the LN theory to an anisotropic dispersion medium and presented the quantization of the radiation field as well as the transformation relation between the homogeneous and anisotropic dispersion media.

Quantization of electromagnetic field in quadratic continuous nonlinear absorptive dielectrics

This paper reports that in the quantization of electromagnetic field in the dielectrics, the wave equation with regard to the Green function is analytically solved by a direct integral method for a quadratic continuous nonlinear absorptive dielectric medium. The quantization of the electromagnetic field in such a nonlinear absorptive dielectric is carried out for which the material dielectric function is assumed as a separable variable about the frequency and the space coordinate. The vacuum field fluctuations for different spatial continuous variations of dielectric function are numerically calculated, which shows that the present result is self-consistent.