A hybrid technique to compute the surface-wave scattering of electrically large 2-D bodies with cracks by combining the current-based hybrid method and the finite element method is presented in this letter. Based on t...A hybrid technique to compute the surface-wave scattering of electrically large 2-D bodies with cracks by combining the current-based hybrid method and the finite element method is presented in this letter. Based on the equivalence theorem, the field scattered by a body with cracks can be divided into two parts: the scattering from the body without cracks and that from the cracks. Some numerical results have been obtained and the feasibility of the proposed method is shown.展开更多
A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared w...A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process,in which the function of the prototype is verified.展开更多
文摘A hybrid technique to compute the surface-wave scattering of electrically large 2-D bodies with cracks by combining the current-based hybrid method and the finite element method is presented in this letter. Based on the equivalence theorem, the field scattered by a body with cracks can be divided into two parts: the scattering from the body without cracks and that from the cracks. Some numerical results have been obtained and the feasibility of the proposed method is shown.
基金Project supported by the National High Technology Research and Development Program of China(No.2009AA01Z115)the Key National Science and Technology Specific Project of China(No.2009ZX02023-1-3)
文摘A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the proposed asymmetrical scheme is implemented in a 0.35μm three metal process,in which the function of the prototype is verified.
