Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

Subject Code:F04 With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Wang Kaiyou(王开友)from the Institute of Semiconductors,Chinese Academy of Sciences demonstrates all-electric and programmable manipulations of ferromagnetic bits without external

Orbital torque of Cr-induced magnetization switching in perpendicularly magnetized Pt/Co/Pt/Cr heterostructures

The spin–orbit torque via the spin Hall effect of heavy metals has shown promising prospect in driving the magnetization switching in spintronic devices due to the generated spin current from heavy metals.Recently,the 3d-light metals have been predicted the ability to generate orbital current and the associated orbital torques from the orbital Hall effect.However,few experiments have been carried out since it is quite hard to directly detect the orbital current-generated orbital torque.Here,we report an effective method to demonstrate the strong orbital torques in light metal Cr through a conversion process from orbital current to spin current by introducing the Pt interfacial layer in perpendicularly magnetized symmetric Pt/Co/Pt structures.A quite large and monotonically growth of orbital torque efficiency in Pt/Co/Pt/Cr with the increase of the thickness of Cr layer is obtained with the largest effective orbital torque efficiency around 2.6 Oe/(MA·cm^(-2))(1 Oe=79.5775 A·m^(-1)).The ability of orbital torque to drive the magnetization switching is also reported with the critical switching current density down to the order of 106A·cm^(-2).Our findings prove the efficiency for switching the magnetization from light metal Cr layers through the orbital Hall effect.

Current-Induced Magnetic Switching in an L1_(0) FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

In this study,current-induced partial magnetization-based switching was realized through the spin–orbit torque(SOT)in single-layer L1_(0) FePt with a perpendicular anisotropy(K_(u⊥))of 1.19×10^(7) erg·cm^(-3)(1 erg·cm^(-3)=0.1 J·m^(-3)),and its corresponding SOT efficiency(βDL)was 8×10^(-6) Oe·(A·cm^(-2))^(-1)(1 Oe=79.57747 A·m^(-1)),which is several times higher than that of the traditional Ta/CoFeB/MgO structure reported in past work.The SOT in the FePt films originated from the structural inversion asymmetry in the FePt films since the dislocations and defects were inhomogeneously distributed within the samples.Furthermore,the FePt grown on MgO with a granular structure had a larger effective SOT field and effi-ciency than that grown on SrTiO_(3)(STO)with a continuous structure.The SOT efficiency was found to be considerably dependent on not only the sputtering temperature-induced chemical ordering but also the lattice mismatch-induced evolution of the microstructure.Our findings can provide a useful means of efficiently electrically controlling a magnetic bit that is highly thermally stable via SOT.

Topological magnetotransport and electrical switching of sputtered antiferromagnetic Ir_(20)Mn_(80)

Topological magnetotransport in non-collinear antiferromagnets has attracted extensive attention due to the exotic phenomena such as large anomalous Hall effect(AHE),magnetic spin Hall effect,and chiral anomaly.The materials exhibiting topological antiferromagnetic physics are typically limited in special Mn_3X family such as Mn_3Sn and Mn_3Ge.Exploring the topological magnetotransport in common antiferromagnetic materials widely used in spintronics will not only enrich the platforms for investigating the non-collinear antiferromagnetic physics,but also have great importance for driving the nontrivial topological properties towards practical applications.Here,we report remarkable AHE,anisotropic and negative parallel magnetoresistance in the magnetron-sputtered Ir_(20)Mn_(80)antiferromagnet,which is one of the most widely used antiferromagnetic materials in industrial spintronics.The ab initio calculations suggest that the Ir_4Mn_(16)(IrMn_4)or Mn_3Ir nanocrystals hold nontrivial electronic band structures,which may contribute to the observed intriguing magnetotransport properties in the Ir_(20)Mn_(80).Further,we demonstrate the spin–orbit torque switching of the antiferromagnetic Ir_(20)Mn_(80)by the spin Hall current of Pt.The presented results highlight a great potential of the magnetron-sputtered Ir_(20)Mn_(80)film for exploring the topological antiferromagnet-based physics and spintronics applications.

Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization

Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.

First-order reversal curve investigated magnetization switching in Pd/Co/Pd wedge film

The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We investigate the polar magneto-optical Kerr effect（MOKE） and carry out the first-order reversal curve（FORC） measurements.For the wedge system,it is observed that the Co thickness could drive the spin reorientation transition（SRT） from out-of-plane to in-plane.Meanwhile,we find the different types of magnetization switchings in the continuous SRT process,which can originate from the formation of different magnetic compositions.Our work provides the possibility of tuning the interfacial effect,and paves the way to analyzing magnetization switching.

Voltage control of magnetization switching and dynamics

The voltage controlled magnetic switching effect is verified experimentally. The Landau–Lifshitz–Gilbert（LLG）equation is used to study the voltage controlled magnetic switching. It is found that the initial values of magnetic moment components are critical for the switching effect, which should satisfy a definite condition. The external magnetic field which affects only the oscillation period should be comparable to the internal magnetic field. If the external magnetic field is too small, the switching effect will disappear. The precessions of mx and my are the best for the tilt angle of the external magnetic field θt = 0？, i.e., the field is perpendicular to the sample plane.

Machine Learning and Micromagnetic Studies of Magnetization Switching

Magnetization switching is one of the most fundamental topics in the field of magnetism.Machine learning(ML)models of random forest(RF),support vector machine(SVM),deep neural network(DNN)methods are built and trained to classify the magnetization reversal and non-reversal cases of single-domain particle,and the classification performances are evaluated by comparison with micromagnetic simulations.The results show that the ML models have achieved great accuracy and the DNN model reaches the best area under curve(AUC)of 0.997,even with a small training dataset,and RF and SVM models have lower AUCs of 0.964 and 0.836,respectively.This work validates the potential of ML applications in studies of magnetization switching and provides the benchmark for further ML studies in magnetization switching.

Multiple modes of perpendicular magnetization switching scheme in single spin-orbit torque device

Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.

Perpendicular magnetization switching by large spin-orbit torques from sputtered Bi2Te3

Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room temperature.However,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial application.In this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy.By harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room temperature.Besides,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources.Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.

Multi-band polarization switch based on magnetic fluid filled dual-core photonic crystal fiber

The research of high-performance polarization controllers is of great significance for expanding the application field of polarization optics. Here, a polarization switch is demonstrated by using a dual-core photonic crystal fiber(DCPCF)with four symmetrical air holes, placed above and below each core, filled with magnetic fluid(MF). The switch, which utilizes a magnetic field to change the coupling length ratio of the x and y polarization modes, enables dynamic tuning of the polarization state and extinction ratio. Numerical results show that when the working length is 36.638 mm, the magneto–optical polarization switch can operate in four communication bands, i.e., 1509 nm to 1520 nm, 1544 nm to1556 nm, 1578 nm to 1591 nm, and 1611 nm to 1624 nm. Moreover, the extinction ratio(ER) is greater than 20 d B in the fiber length range of 38.5 mm to 38.7 mm, indicating that the device has a good fault tolerance for the interception of the fiber length.

Spin switching in antiferromagnets using Néel-order spin-orbit torques

Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin–orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.

Initial Rotor Position Detection of 12/10 Flux-switching Permanent Magnet Motors

电机转子初始位置检测的精度直接决定其启动运行时的性能。针对12/10极永磁磁通切换型电机,在验证其凸极性的基础上,采用注入脉振高频信号实现转子初始位置估计。通过对传统高频脉振正弦电压信号注入的分析,研究了基于高频方波或三角波的注入方法,再利用电流差值调制或直接信号调制方法得到位置误差信号,同时根据磁路的饱和效应,通过对d轴电流过零点时间差值的累加,实现了磁极方向辨识。分析了位置误差信号的系数与初始位置检测收敛性的关系。通过实验验证了所提方法的正确性和可行性。

Electromagnetic Performance Analysis of Flux-Switching Permanent Magnet Tubular Machine with Hybrid Cores

The performance of traditional flux switching permanent magnet tubular machine(FSPMTM)are improved by using new material and structure in this paper.The existing silicon steel sheet making for all mover cores or part of stator cores are replaced by soft magnetic composite(SMC)cores,and the lamination direction of the silicon steel sheet in stator cores have be changed.The eddy current loss of the machine with hybrid cores will be reduced greatly as the magnetic flux will not pass through the silicon steel sheet vertically.In order to reduce the influence of end effect,the unequal stator width design method is proposed.With the new design,the symmetry of the permanent magnet flux linkage has been improved greatly and the cogging force caused by the end effect has been reduced.Both 2-D and 3-D finite element methods(FEM)are applied for the quantitative analysis.

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO(001) films

Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO（001） films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/MgO（001） films at different temperatures.

Reduction of Cogging Torque in Permanent Magnet Flux-Switching Machines

Permanent magnet flux-switching machine (PMFSM) is a relatively new structure. Available literatures mainly focused on its general design procedure and performance analysis. In this paper, Finite Element Method (FEM) is taken to ana-lyze various design techniques to reduce the cogging torque in a prototype 12/10-pole PMFSM.

Study on Magnetic Shielding for Performance Improvement of Axial-Field Dual-Rotor Segmented Switched Reluctance Machine

A category of permanent-magnet-shield(PM-shield)axial-field dual-rotor segmented switched reluctance machines(ADS-SRMs)are presented in this paper.These topologies are featured by using the magnetic material to shield the flux leakage in the stator and rotor parts.Besides,the deployed magnets weaken the magnetic saturation in the iron core,thus increasing the main flux.Hence,the torque-production capability can be increased effectively.All the PM-shield topologies are proposed and designed based on the magnetic equivalent circuit(MEC)model of ADS-SRM,which is the original design deploying no magnet.The features of all the PM-shield topologies are compared with the original design in terms of the magnetic field distributions,flux linkages,phase inductances,torque components,and followed by their motion-coupled analyses on the torque-production capabilities,copper losses,and efficiencies.Considering the cost reduction and the stable ferrite-magnet supply,an alternative proposal using the ferrite magnets is applied to the magnetic shielding.The magnet demagnetization analysis incorporated with the thermal behavior is performed for further verification of the motor performance.

Winding Inductance and Performance Prediction of a Switched Reluctance Motor with an Exterior-rotor Considering the Magnetic Saturation

This paper deals with an analytical method to effectively calculate the inductance of an exterior-rotor switched reluctance motor(SRM),which evaluates the winding inductance of both the active section and the end section,accounting for the influence of core saturation.According to the inductance calculated by the analytical model,the flux linkage table and torque table can be established,and the steady state performance such as phase current,flux linkage,copper loss and core loss can be predicted.Effectiveness of this method is verified by the finite element method as well as by experimental results of a 12/8 SRM prototype.