When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop thr...When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.展开更多
三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模...三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模态下电流应力、回流功率的表达式,通过对比求解全局内最小电流应力、最小回流功率对应最优移相比,并设计相应优化控制策略。然后基于相同传输功率段将两种优化控制策略进行对比分析,发现两种优化控制策略均可在全功率传输内对变换器进行优化。当1/2<p<2/3时,两种优化控制对电流应力的优化等效,当0<p<1/2时,两种优化控制对回流功率的优化等效。最后通过实验验证了理论分析的有效性和正确性。展开更多
Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed duri...Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.展开更多
DC magnetic biasing problem,caused by the DC grounding electrode, threatened the safe operation of AC power grid. In this paper, the characteristics of the soil stratification near DC grounding electrode was researche...DC magnetic biasing problem,caused by the DC grounding electrode, threatened the safe operation of AC power grid. In this paper, the characteristics of the soil stratification near DC grounding electrode was researched. The AC-DC interconnected large-scale system model under the monopole operation mode was established. The earth surface potential and DC current distribution in various stations under the different surface thickness was calculated. Some useful conclusions are drawn from the analyzed results.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.51977132)Key Special Science and Technology Project of Liaoning Province (Grant No.2020JH1/10100012)General Program of the Education Department of Liaoning Province (Grant No.LJKZ0126)。
文摘When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.
文摘三电平双有源混合全桥(hybrid three level full bridge,H-TLFB)DC-DC变换器在双重移相控制下存在回流功率和电流应力较大的问题,为此提出电流应力优化控制和回流功率优化控制两种优化控制策略。首先分析变换器4种工作模态,推导不同模态下电流应力、回流功率的表达式,通过对比求解全局内最小电流应力、最小回流功率对应最优移相比,并设计相应优化控制策略。然后基于相同传输功率段将两种优化控制策略进行对比分析,发现两种优化控制策略均可在全功率传输内对变换器进行优化。当1/2<p<2/3时,两种优化控制对电流应力的优化等效,当0<p<1/2时,两种优化控制对回流功率的优化等效。最后通过实验验证了理论分析的有效性和正确性。
基金supported by the research fund of Chungnam National University
文摘Type-Ⅱsuperlattice(T2SL)materials are the key element for infrared(IR)detectors.However,it is well known that the characteristics of the detectors with the T2SL layer are greatly affected by the strain developed during the growth process,which determines the performance of IR detectors.Therefore,great efforts have been made to properly control the strain effect and develop relevant analysis methods to evaluate the strain-induced dark current characteristics.In this work,we report the strain-induced dark current characteristics in InAs/GaSb T2SL MWIR photodetector.The overall strain of InAs/GaSb T2SL layer was analyzed by both high-resolution X-ray diffraction(HRXRD)and the dark current measured from the absorber layer at the elevated temperatures(≥110 K),where the major leakage current component is originated from the reduced minority carrier lifetime in the absorber layer.Our findings indicate that minority carrier lifetime increases as the tensile strain on the InAs/GaSb T2SL is more compensated by the compressive strain through‘InSb-like’interface,which reduces the dark current density of the device.Specifically,tensile strain compensated devices exhibited the dark current density of less than 2×10^-5 A/cm^2 at 120 K,which is more than one order of magnitude lower value compared to that of the device without tensile strain relaxation.
文摘DC magnetic biasing problem,caused by the DC grounding electrode, threatened the safe operation of AC power grid. In this paper, the characteristics of the soil stratification near DC grounding electrode was researched. The AC-DC interconnected large-scale system model under the monopole operation mode was established. The earth surface potential and DC current distribution in various stations under the different surface thickness was calculated. Some useful conclusions are drawn from the analyzed results.
