In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak...In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 ℃ annealing, meanwhile, deep level defects are decreased.展开更多
合成了一种具有深的HOMO(-6.15 e V)分子轨道和高三线态能级(T_1,2.82 e V)的新型化合物10-(2-螺-9,9'-氧杂蒽芴基)吩噻嗪(SFXPz)。因其宽的能带结构(E_g,4.22 e V)和深的HOMO能级而有望制备高效蓝色有机电致磷光器件。热重分析和...合成了一种具有深的HOMO(-6.15 e V)分子轨道和高三线态能级(T_1,2.82 e V)的新型化合物10-(2-螺-9,9'-氧杂蒽芴基)吩噻嗪(SFXPz)。因其宽的能带结构(E_g,4.22 e V)和深的HOMO能级而有望制备高效蓝色有机电致磷光器件。热重分析和差热扫描曲线表明,该化合物具有良好的热稳定性(T_d,259℃)和高的形态稳定性(T_g,206℃)。完全相互分离的HOMO和LUMO轨道有利于阻止分子内能量反转。SFXPz的紫外吸收峰分别位于230,260,292和310 nm左右;其荧光光谱两个发射峰分别位于311,324 nm左右。此外,该化合物的分子结构经LC-MS、~1H NMR和^(13)C NMR进行了详细表征。展开更多
基金Supported by the National Natural Science Foundation of China (No. 61006008)Xi'an Applied Materials Innovation Fund (No. XA-AM-200607)
文摘In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 ℃ annealing, meanwhile, deep level defects are decreased.
文摘合成了一种具有深的HOMO(-6.15 e V)分子轨道和高三线态能级(T_1,2.82 e V)的新型化合物10-(2-螺-9,9'-氧杂蒽芴基)吩噻嗪(SFXPz)。因其宽的能带结构(E_g,4.22 e V)和深的HOMO能级而有望制备高效蓝色有机电致磷光器件。热重分析和差热扫描曲线表明,该化合物具有良好的热稳定性(T_d,259℃)和高的形态稳定性(T_g,206℃)。完全相互分离的HOMO和LUMO轨道有利于阻止分子内能量反转。SFXPz的紫外吸收峰分别位于230,260,292和310 nm左右;其荧光光谱两个发射峰分别位于311,324 nm左右。此外,该化合物的分子结构经LC-MS、~1H NMR和^(13)C NMR进行了详细表征。
