A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the ...A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.展开更多
Nitrogen(N)deep placement has been found to reduce N leaching and increase N use efficiency in paddy fields.However,relatively little is known how bacterial consortia,especially abundant and rare taxa,respond to N dee...Nitrogen(N)deep placement has been found to reduce N leaching and increase N use efficiency in paddy fields.However,relatively little is known how bacterial consortia,especially abundant and rare taxa,respond to N deep placement,which is critical for understanding the biodiversity and function of agricultural ecosystem.In this study,lllumina sequencing and ecological models were conducted to examine the diversity patterns and underlying assembly mechanisms of abundant and rare taxa in rice rhizosphere soil under different N fertilization regimes at four rice growth stages in paddy fields.The results showed that abundant and rare bacteria had distinct distribution patterns in rhizosphere samples.Abundant bacteria showed ubiquitous distribution;while rare taxa exhibited uneven distribution across all samples.Stochastic processes dominated community assembly of both abundant and rare bacteria,with dispersal limitation playing a more vital role in abundant bacteria,and undominated processes playing a more important role in rare bacteria.The N deep placement was associated with a greater influence of dispersal limitation than the broadcast N fertilizer(BN)and no N fertilizer(NN)treatments in abundant and rare taxa of rhizosphere soil;while greater contributions from homogenizing dispersal were observed for BN and NN in rare taxa.Network analysis indicated that abundant taxa with closer relationships were usually more likely to occupy the central position of the network than rare taxa.Nevertheless,most of the keystone species were rare taxa and might have played essential roles in maintaining the network stability.Overall,these findings highlighted that the ecological mechanisms and co-occurrence patterns of abundant and rare bacteria in rhizosphere soil under N deep placement.展开更多
This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect ...This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.展开更多
A 0.5 V static master-slave D flip-flop （DFF） divider-by-2 is implemented with a 0.13 μm 1P8M RF- mixed signal CMOS process. Low-threshold transistors in a deep-N well with forward-body bias technology are used in ...A 0.5 V static master-slave D flip-flop （DFF） divider-by-2 is implemented with a 0.13 μm 1P8M RF- mixed signal CMOS process. Low-threshold transistors in a deep-N well with forward-body bias technology are used in the circuit. Each of the D-latch with source coupled logic consists of sensing and latching circuits. To increase the maximum operating frequency and decrease power consumption, the latching current is one half of the sensing current. The circuit optimization methods are described in this paper. The measured maximum operating frequency is 6.5 GHz and the minimum input singled-signal amplitude is 0.15 V.展开更多
文摘A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved.
基金the National Key Research and Development Program of China(2016YFD0200309 and 2018YFD0301104-01).
文摘Nitrogen(N)deep placement has been found to reduce N leaching and increase N use efficiency in paddy fields.However,relatively little is known how bacterial consortia,especially abundant and rare taxa,respond to N deep placement,which is critical for understanding the biodiversity and function of agricultural ecosystem.In this study,lllumina sequencing and ecological models were conducted to examine the diversity patterns and underlying assembly mechanisms of abundant and rare taxa in rice rhizosphere soil under different N fertilization regimes at four rice growth stages in paddy fields.The results showed that abundant and rare bacteria had distinct distribution patterns in rhizosphere samples.Abundant bacteria showed ubiquitous distribution;while rare taxa exhibited uneven distribution across all samples.Stochastic processes dominated community assembly of both abundant and rare bacteria,with dispersal limitation playing a more vital role in abundant bacteria,and undominated processes playing a more important role in rare bacteria.The N deep placement was associated with a greater influence of dispersal limitation than the broadcast N fertilizer(BN)and no N fertilizer(NN)treatments in abundant and rare taxa of rhizosphere soil;while greater contributions from homogenizing dispersal were observed for BN and NN in rare taxa.Network analysis indicated that abundant taxa with closer relationships were usually more likely to occupy the central position of the network than rare taxa.Nevertheless,most of the keystone species were rare taxa and might have played essential roles in maintaining the network stability.Overall,these findings highlighted that the ecological mechanisms and co-occurrence patterns of abundant and rare bacteria in rhizosphere soil under N deep placement.
基金Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004)Innovation Foundation for Postgraduate of Hunan Province,China (Grant No. CX2011B026)
文摘This paper investigates the temperature dependence of single-event transients（SETs） in 90-nm complementary metat-oxide semiconductor（CMOS） dual-well and triple-well negative metal-oxide semiconductor field-effect transistors（NMOSFETs）.Technology computer-aided design（TCAD） three-dimensional（3D） simulations show that the drain current pulse duration increases from 85 ps to 245 ps for triple-well but only increases from 65 ps to 98 ps for dual-well when the temperature increases from-55℃ to 125℃,which is closely correlated with the NMOSFET sources.This reveals that the pulse width increases with temperature in dual-well due to the weakening of the anti-amplification bipolar effect while increases with temperature in triple-well due to the enhancement of the bipolar amplification.
基金supported by the National High Technology Research and Development Program of China(No.2007AA01Z2A7)the Special Fund of Jiangsu Province for the Transformation of Scientific and Technological Achievements(No.BA2010073)
文摘A 0.5 V static master-slave D flip-flop （DFF） divider-by-2 is implemented with a 0.13 μm 1P8M RF- mixed signal CMOS process. Low-threshold transistors in a deep-N well with forward-body bias technology are used in the circuit. Each of the D-latch with source coupled logic consists of sensing and latching circuits. To increase the maximum operating frequency and decrease power consumption, the latching current is one half of the sensing current. The circuit optimization methods are described in this paper. The measured maximum operating frequency is 6.5 GHz and the minimum input singled-signal amplitude is 0.15 V.
