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Ionization behavior of deep level donors in passive film formed on surface of stainless steel in 5% salt solution
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作者 王超 盛敏奇 +2 位作者 钟庆东 周国治 鲁雄刚 《Journal of Central South University》 SCIE EI CAS 2010年第2期295-299,共5页
Deep level donor's ionization behavior of passive film formed on the surface of stainless steel was investigated by Mott-Schottky plots. It is indicated that transformation process of deep level donors' ionization b... Deep level donor's ionization behavior of passive film formed on the surface of stainless steel was investigated by Mott-Schottky plots. It is indicated that transformation process of deep level donors' ionization behavior of passive film on surface of stainless steel can be divided into 4 stages with rising immersion time. At the initial immersion stage (10 min), Fe(II) located in the octahedral sites of the unit cell is not ionized and the deep level does not appear in Mott-Schottky plots. At the second stage (9-38 h), Fe(II) located in the octahedral sites starts to be ionized, which results in deep level donors' generation and density of deep level donors almost is constant with augmenting immersion time but the thickness of space charge layer is more and more thicker with rising immersion time. At the third stage (48 h-12 d), density of deep level donors rises with increasing immersion time and the thickness of passive films space charge layer decreases. At last stage (above 23 d), both the space charge layer's thickness and density of deep level donors are no longer changed with increasing immersion time. In the overall immersion stage, the shallow level donors' density is invariable all the time. The mechanism of deep level donor's ionization can be the generation of metal vacancies, which results in crystal lattice's aberration and the aberration energy urges the ionization of Fe( II ) in octahedral sites. 展开更多
关键词 stainless steel deep level donor Mott-Schottky plots donor density space charge layer aberration energy
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钒掺杂Cd_(0.9)Mn_(0.1)Te晶体生长与深能级缺陷研究 被引量:1
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作者 游思伟 艾涛 栾丽君 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2022年第5期1873-1878,共6页
CdMnTe(碲锰镉)材料作为新一代的半导体材料,在核辐射探测领域具有很高的应用价值。本实验采用Te溶液垂直布里奇曼法生长Cd_(0.9)Mn_(0.1)Te:V晶体,研究其光电性能及深能级缺陷的分布。紫外-可见-近红外光谱分析表明晶锭中部和尾部的禁... CdMnTe(碲锰镉)材料作为新一代的半导体材料,在核辐射探测领域具有很高的应用价值。本实验采用Te溶液垂直布里奇曼法生长Cd_(0.9)Mn_(0.1)Te:V晶体,研究其光电性能及深能级缺陷的分布。紫外-可见-近红外光谱分析表明晶锭中部和尾部的禁带宽度分别为1.602和1.597 eV。光致发光谱中,晶体的(D^(0),X)峰形尖锐,半峰宽较小,表明缺陷或杂质含量低,晶体质量好。室温I-V测试晶锭中部和尾部晶体电阻率分别为2.85×10^(10)和9.54×10^(9)Ω·cm,漏电流分别为3和8.5 nA。霍尔测试表明晶体导电类型为n型。通过热激电流谱研究了Cd_(0.9)Mn_(0.1)Te:V晶体中缺陷的能级和浓度,其中晶锭中部和尾部样品中源于Te反位(Te_(Cd)^(2+))的深施主能级(E_(DD))的值分别为0.90和0.812 eV。并且深施主能级E_(DD)使费米能级位于禁带中央,从而使晶体呈现高电阻率。 展开更多
关键词 Cd_(0.9)Mn_(0.1)Te:V 深能级缺陷 深施主能级 费米能级
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