The electrical properties of TiO2-based varistor ceramics with different amount of CeO2 were investigated by measuring the properties of V-I, permittivity, density and boundary defect barriers. It is found that an opt...The electrical properties of TiO2-based varistor ceramics with different amount of CeO2 were investigated by measuring the properties of V-I, permittivity, density and boundary defect barriers. It is found that an optimal composition doped with 0.7% CeO2 exhibits the highest nonlinear coefficient of 10.5, the highest breakdown voltage of 12.77 V·mm^-1, the ultrahigh permittivity of 82900（measured at 1 kHz）, and the highest density of 4.15 g·cm^-3, which is consistent with the highest and narrowest grain-boundary defect barriers. In order to illustrate the grain boundary barriers formation in TiO2-Nb2O5-MnCO3-CeO2 varistor, an grain-boundary defect barrier model was also introduced.展开更多
文摘The electrical properties of TiO2-based varistor ceramics with different amount of CeO2 were investigated by measuring the properties of V-I, permittivity, density and boundary defect barriers. It is found that an optimal composition doped with 0.7% CeO2 exhibits the highest nonlinear coefficient of 10.5, the highest breakdown voltage of 12.77 V·mm^-1, the ultrahigh permittivity of 82900（measured at 1 kHz）, and the highest density of 4.15 g·cm^-3, which is consistent with the highest and narrowest grain-boundary defect barriers. In order to illustrate the grain boundary barriers formation in TiO2-Nb2O5-MnCO3-CeO2 varistor, an grain-boundary defect barrier model was also introduced.
