Impact Analysis of Microscopic Defect Types on the Macroscopic Crack Propagation in Sintered Silver Nanoparticles

Sintered silver nanoparticles(AgNPs)arewidely used in high-power electronics due to their exceptional properties.However,the material reliability is significantly affected by various microscopic defects.In this work,the three primary micro-defect types at potential stress concentrations in sintered AgNPs are identified,categorized,and quantified.Molecular dynamics(MD)simulations are employed to observe the failure evolution of different microscopic defects.The dominant mechanisms responsible for this evolution are dislocation nucleation and dislocation motion.At the same time,this paper clarifies the quantitative relationship between the tensile strain amount and the failure mechanism transitions of the three defect types by defining key strain points.The impact of defect types on the failure process is also discussed.Furthermore,traction-separation curves extracted from microscopic defect evolutions serve as a bridge to connect the macro-scale model.The validity of the crack propagation model is confirmed through tensile tests.Finally,we thoroughly analyze how micro-defect types influence macro-crack propagation and attempt to find supporting evidence from the MD model.Our findings provide a multi-perspective reference for the reliability analysis of sintered AgNPs.

Algorithmic Scheme for Concurrent Detection and Classification of Printed Circuit Board Defects

An ideal printed circuit board(PCB)defect inspection system can detect defects and classify PCB defect types.Existing defect inspection technologies can identify defects but fail to classify all PCB defect types.This research thus proposes an algorithmic scheme that can detect and categorize all 14-known PCB defect types.In the proposed algorithmic scheme,fuzzy cmeans clustering is used for image segmentation via image subtraction prior to defect detection.Arithmetic and logic operations,the circle hough transform(CHT),morphological reconstruction(MR),and connected component labeling(CCL)are used in defect classification.The algorithmic scheme achieves 100%defect detection and 99.05%defect classification accuracies.The novelty of this research lies in the concurrent use of CHT,MR,and CCL algorithms to accurately detect and classify all 14-known PCB defect types and determine the defect characteristics such as the location,area,and nature of defects.This information is helpful in electronic parts manufacturing for finding the root causes of PCB defects and appropriately adjusting the manufacturing process.Moreover,the algorithmic scheme can be integrated into machine vision to streamline the manufacturing process,improve the PCB quality,and lower the production cost.

Biomechanical study of modular hemipelvic endoprosthesis for Type I-IV defect of pelvic tumor

Background： The modular hemipelvic prosthesis has been used in patient of Type I-IV pelvic tumor with good outcomes, but how to keep the stability between the prosthesis and the residual sacrum is a problem. An additional screw-rod system seems to solve it, but its biomechanical characters are still not well understood, which need experimental evaluation. Methods： Six pelvic specimens were prepared in three conditions （normal intact pelvis, ＂normal＂; the pelvis of left Type I-IV defect and implanted with prosthesis without/with additional screw-rod system, ＂rod-＂ and ＂rod＋＂）. Compressing biomechanical experiments （50-500N） were performed in these three conditions, respectively. Results： The loadings during the experiments are in accordance with the linear elastic control mode. Under the increasing loading, the implanted pelvises displaced asymmetrically, unlike normal intact pelvis. The vertical displacement of ＂rod＋＂ changed significantly, whereas ＂rod-＂ did not. For both implanted pelvis, right side displaced less than left side （P values 〈0.05）. Conclusions： The implanted pelvis showed asymmetric displacement under loading, where healthy side displaced more. The implanted pelvis plus screw-rod system showed less displacement at implanted side but more at contralateral side in comparison with those without screw-rod system.

Transport Properties of InAs-lnP Solid Solutions

Transport phenomena, namely electrical properties of n-type crystals of InAs and InP solid solutions were investigated in the temperature range 4.2-300 K before and after irradiation with fast neutrons and electrons. Maximum integral fluence of fast neutrons was 2× 1018 n.cm2. At the irradiation with 3 MeV electrons, the integrated electron fluence was 5 × 1017 e·cm2. We show that point type defects play an important role in the radiation processes. They are effective scattering centers of charge carriers in lnAs, InP and InPxASl.x solid solutions irradiated with 3 MeV energy electrons, especially for InAs-rich solid solutions. The charge carriers scattering mechanisms and accordingly the values of mobility are defined by disordered regions in samples irradiated with fast neutrons. The presence of minimum mobility value in composition dependence of mobility disappears after fast neutrons irradiation, which indicates that the contribution of ＂alloy＂ scattering is negligibly small in crystals irradiated with fast neutrons at both room and low temperatures.