In this paper, we consider a degenerate steady-state drift-diffusion model for semiconductors. The pressure function used in this paper is ()(s) = s~α(α 〉 1). We present existence results for general nonlinea...In this paper, we consider a degenerate steady-state drift-diffusion model for semiconductors. The pressure function used in this paper is ()(s) = s~α(α 〉 1). We present existence results for general nonlinear diffhsivities for the degenerate Dirichlet-Neumann mixed boundary value problem.展开更多
基金supported by NSFC (40906048) the Tianyuan Foundation of Mathematics (11026211)+1 种基金 the Natural Science Foundation of the Jiangsu Higher Education Institutions (09KJB110005)the Science Research Foundation of NUIST (20080295)
文摘In this paper, we consider a degenerate steady-state drift-diffusion model for semiconductors. The pressure function used in this paper is ()(s) = s~α(α 〉 1). We present existence results for general nonlinear diffhsivities for the degenerate Dirichlet-Neumann mixed boundary value problem.