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Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions 被引量:1
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作者 王洪朝 何依婷 +5 位作者 孙华阳 丘志仁 谢灯 梅霆 Tin C. C 冯哲川 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第4期134-138,共5页
The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth condi... The microRaman scattering of 4H-SiC films, fabricated by low pressure chemical vapor deposition under different growth conditions, is investigated at temperatures ranging from 80 K to 550K. The effects of growth conditions on E2 (TO), E1 (TO) and A1 (LO) phonon mode frequencies are negligible. The temperature dependences of phonon linewidth and lifetime of E2 (TO) modes are analyzed in terms of an anharmonic damping effect induced by thermal and growth conditions. The results show that the lifetime of E2 (TO) mode increases when the quality of the sample improves. Unlike other phone modes, Raman shift of A1 (longitudinal optical plasma coupling (LOPC)) mode does not decrease monotonously when the temperature increases, but tends to blueshift at low temperatures and to redshift at relatively high temperatures. Theoretical analyses are given for the abnormal phenomena of A1 (LOPC) mode in 4H-SiC. 展开更多
关键词 RA SIC Temperature Dependence of Raman Scattering in 4H-SiC Films under Different growth Conditions
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Sustaining High Growth Depends on Investment
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《World Economy & China》 2000年第5期55-58,共4页
关键词 OO US Sustaining High growth Depends on Investment
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