Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the s...Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.展开更多
Grade-tonnage model is one of the research frontiers of systematical exploration theory. Based on the “Reserve Database of Mineral Resources in China (1997)”, this paper establishes the geological model, grade model...Grade-tonnage model is one of the research frontiers of systematical exploration theory. Based on the “Reserve Database of Mineral Resources in China (1997)”, this paper establishes the geological model, grade model, tonnage model, grade-tonnage model and tonnage-sequence model of contact metasomatic copper deposits in China. The mathematical properties of these models are described in detail.展开更多
Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large wor...Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures.However,common metal electrode materials have similar and high work functions,making it difficult to form an asymmetric contacts structure with a large work function difference.Herein,Mo2C crystals with low work function(3.8 eV) was obtained by chemical vapor deposition(CVD) method.The large work function difference between Mo2C and Au allowed us to synthesize an efficient Mo2C/MoS2/Au photodetector with asymmetric metal contact structure,which enables light detection without external electric power.We believe that this novel device provides a new direcfor the design of miniature self-powered photodetectors.These results also highlight the great potential of ultrathin Mo2C prepared by CVD in heterojunction device applications.展开更多
With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most pro...With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.展开更多
Cathodic arc evaporation is a well-established physical vapor deposition technique which is characterized by a high degree of ionization and high deposition rate. So far, this technique has been mainly used for the de...Cathodic arc evaporation is a well-established physical vapor deposition technique which is characterized by a high degree of ionization and high deposition rate. So far, this technique has been mainly used for the deposition of tribological coatings. In this study, anti-corrosive and electrical conductive carbon-based coatings with a metallic interlayer were prepared on stainless steel substrates as surface modification for metallic bipolar plates. Hereby, the influence of the deposition temperature during the deposition of the carbon top layer was investigated. Raman spectroscopy revealed differences in the microstructure at 200°C compared to 300°C and 100°C. Measurements of the interfacial contact resistance showed that the deposited coatings significantly improve the electrical conductivity. There are only minor differences between the different carbon top layers. The corrosion resistance of the coatings was studied via potentiodynamic polarization at room temperature and 80°C. Experiments showed that the coating with a carbon top layer deposited at 200°C, considerably reduces the current density and thus corrosion of the substrate is suppressed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61306113
文摘Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors. Low ohmic contact resistance of 0.15Ω.mm is obtained. It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance. The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at Vgs = 1 V and a maximum peak extrinsic transcondutance Gm of 216mS/ram. Moreover, a current gain cut-off frequency fT of 115 GHz and a maximum oscillation frequency fmax of 127 GHz are achieved.
基金National Doctoral Fund Project!(98024004)fund project of the L aboratoryofQuantitativePredictionExploration Assessment
文摘Grade-tonnage model is one of the research frontiers of systematical exploration theory. Based on the “Reserve Database of Mineral Resources in China (1997)”, this paper establishes the geological model, grade model, tonnage model, grade-tonnage model and tonnage-sequence model of contact metasomatic copper deposits in China. The mathematical properties of these models are described in detail.
基金supported by the National Natural Science Foundation of China(11674113,U1765105)the support of experimental facilities in WNLO of HUSTAnalysis and Testing Center of HUST for support
文摘Self-powered devices are widely used in the detection and sensing fields.Asymmetric metal contacts provide an effective way to obtain self-powered devices.Finding two stable metallic electrode materials with large work function differences is the key to obtain highly efficient asymmetric metal contacts structures.However,common metal electrode materials have similar and high work functions,making it difficult to form an asymmetric contacts structure with a large work function difference.Herein,Mo2C crystals with low work function(3.8 eV) was obtained by chemical vapor deposition(CVD) method.The large work function difference between Mo2C and Au allowed us to synthesize an efficient Mo2C/MoS2/Au photodetector with asymmetric metal contact structure,which enables light detection without external electric power.We believe that this novel device provides a new direcfor the design of miniature self-powered photodetectors.These results also highlight the great potential of ultrathin Mo2C prepared by CVD in heterojunction device applications.
基金financially supported by the National Natural Science Foundation of China (No. 51272024)the Ph.D. Programs Foundation of the Ministry of Education of China (No. 20110006110011)the Fundamental Research Funds for Central Universities (No. FRF-TP-13-035A)
文摘With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current （DC） arc jet chemical vapor deposition （CVD） are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 10^11-10^13 cm-2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method （TLM）. Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10^-5 Ω-cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.
文摘Cathodic arc evaporation is a well-established physical vapor deposition technique which is characterized by a high degree of ionization and high deposition rate. So far, this technique has been mainly used for the deposition of tribological coatings. In this study, anti-corrosive and electrical conductive carbon-based coatings with a metallic interlayer were prepared on stainless steel substrates as surface modification for metallic bipolar plates. Hereby, the influence of the deposition temperature during the deposition of the carbon top layer was investigated. Raman spectroscopy revealed differences in the microstructure at 200°C compared to 300°C and 100°C. Measurements of the interfacial contact resistance showed that the deposited coatings significantly improve the electrical conductivity. There are only minor differences between the different carbon top layers. The corrosion resistance of the coatings was studied via potentiodynamic polarization at room temperature and 80°C. Experiments showed that the coating with a carbon top layer deposited at 200°C, considerably reduces the current density and thus corrosion of the substrate is suppressed.
