Graphene films are deposited on copper （Cu） and aluminum （Al） substrates, respectively, by using a microwave plasma chemical vapour deposition technique. Furthermore, these graphene films are characterized by a fi...Graphene films are deposited on copper （Cu） and aluminum （Al） substrates, respectively, by using a microwave plasma chemical vapour deposition technique. Furthermore, these graphene films are characterized by a field emission type scanning electron microscope （FE-SEM）, Raman spectra, and field emission （FE） I-V measurements. It is found that the surface morphologies of the films deposited on Cu and Al substrates are different： the field emission property of graphene film deposited on the Cu substrate is better than that on the Al substrate, and the lowest turn-on field of 2.4 V/p-m is obtained for graphene film deposited on the Cu substrate. The macroscopic areas of the graphene samples are all above 400 mm2.展开更多
Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the pro...Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.展开更多
Titanium dioxide(TiO2) has gained burgeoning attention for potassium-ion storage because of its large theoretical capacity,wide availability,and environmental benignity.Nevertheless,the inherently poor conductivity gi...Titanium dioxide(TiO2) has gained burgeoning attention for potassium-ion storage because of its large theoretical capacity,wide availability,and environmental benignity.Nevertheless,the inherently poor conductivity gives rise to its sluggish reaction kinetics and inferior rate capability.Here,we report the direct graphene growth over TiO2 nanotubes by virtue of chemical vapor deposition.Such conformal graphene coatings effectively enhance the conductive environment and well accommodate the volume change of TiO2 upon potassiation/depotassiation.When paired with an activated carbon cathode,the graphene-armored TiO2 nanotubes allow the potassium-ion hybrid capacitor full cells to harvest an energy/power density of 81.2 Wh kg-1/3746.6 W kg-1.We further employ in situ transmis sion electron microscopy and ope rando X-ray diffraction to probe the potassium-ion storage behavior.This work offers a viable and versatile solution to the anode design and in situ probing of potassium storage technologies that is readily promising for practical applications.展开更多
We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000°C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed...We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000°C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to measure the transmittance of the carbon films;with this information we calculate that the approximate number of layers is 11.展开更多
Chemical inhomogeneity of chemical vapor deposition(CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity ...Chemical inhomogeneity of chemical vapor deposition(CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2 D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21%improvement in the standard deviation 2 D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2 D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio(low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.展开更多
基金Project supported by the Shanghai Human Resources and Social Security Bureau,China(Grant No.2009023)
文摘Graphene films are deposited on copper （Cu） and aluminum （Al） substrates, respectively, by using a microwave plasma chemical vapour deposition technique. Furthermore, these graphene films are characterized by a field emission type scanning electron microscope （FE-SEM）, Raman spectra, and field emission （FE） I-V measurements. It is found that the surface morphologies of the films deposited on Cu and Al substrates are different： the field emission property of graphene film deposited on the Cu substrate is better than that on the Al substrate, and the lowest turn-on field of 2.4 V/p-m is obtained for graphene film deposited on the Cu substrate. The macroscopic areas of the graphene samples are all above 400 mm2.
基金supported substantially by the Southwest Jiaotong University for Material and Financial Support。
文摘Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.
基金financially supported by the National Natural Science Foundation of China(51702225,11774051,61574034,51672007)the National Basic Research Program of China(No.2016YFA0200103)the Natural Science Foundation of Jiangsu Province(BK20170336)。
文摘Titanium dioxide(TiO2) has gained burgeoning attention for potassium-ion storage because of its large theoretical capacity,wide availability,and environmental benignity.Nevertheless,the inherently poor conductivity gives rise to its sluggish reaction kinetics and inferior rate capability.Here,we report the direct graphene growth over TiO2 nanotubes by virtue of chemical vapor deposition.Such conformal graphene coatings effectively enhance the conductive environment and well accommodate the volume change of TiO2 upon potassiation/depotassiation.When paired with an activated carbon cathode,the graphene-armored TiO2 nanotubes allow the potassium-ion hybrid capacitor full cells to harvest an energy/power density of 81.2 Wh kg-1/3746.6 W kg-1.We further employ in situ transmis sion electron microscopy and ope rando X-ray diffraction to probe the potassium-ion storage behavior.This work offers a viable and versatile solution to the anode design and in situ probing of potassium storage technologies that is readily promising for practical applications.
文摘We produce multilayer graphene by the Chemical Vapor Deposition (CVD) method at atmospheric pressure and 1000°C, using flexible copper substrates as catalyst and liquid hexane as the source of carbon. We designed an optical device to measure the transmittance of the carbon films;with this information we calculate that the approximate number of layers is 11.
基金Supported by the Scientific Research Project of Cankiri Karatekin University(MF200217B05)the Scientific Research Project Management Unit of Cankiri Karatekin University(CAKü-BAP)
文摘Chemical inhomogeneity of chemical vapor deposition(CVD) grown graphene compromises its usage in highperformance devices. In this study, TOPSIS based Taguchi optimization was performed to improve thickness uniformity and defect density of CVD grown graphene. 1.56% decrease in the mean 2 D/G intensity ratio, 87.96% improvement in the mean D/G intensity ratio, 56.07% improvement in the standard deviation D/G intensity ratio, 25.21%improvement in the standard deviation 2 D/G intensity ratio, and 69.32% improvement in the surface roughness were achieved with TOPSIS based Taguchi optimization. The statistical differences between the copper and silicon substrates have been found significantly in terms of their impacts on the graphene's properties with the0.000 p-value for the mean D/G intensity ratio and with the 0.009 p-value for the mean 2 D/G intensity ratio, respectively. Graphene having 11% lower mean D/G intensity ratio(low defective graphene products) compared to the values given in the literature using single-response optimization was obtained using multi-response optimization.
