In situ laser deposition of NiTi intermetallics for corrosion improvement of Ti-6Al-4V alloy

NiTi intermetallic coatings were fabricated on the surface of Ti-6Al-4V alloy by melting Ni and Ti powders using laser metal deposition（LMD） process.The effects of NiTi reinforcement content on the microstructure,hardness and corrosion properties of the coatings were examined.The results show that the deposited coatings are characterized by NiTi,NiTi2 and NiTi3 intermetallic phases.An appreciable increase in corrosion resistance is obtained for all the coatings,and Ti55Ni45 coating shows the highest corrosion resistance;while coatings Ti50Ni50 and Ti45Ni55 follow in that succession.The reinforcement materials are proven to be corrosion resistant in the tested environment,and the effect of Ti is more dominant.

Laser metal deposition of refractory high-entropy alloys for high-throughput synthesis and structure-property characterization

Progress in materials development is often paced by the time required to produce and evaluate a large number of alloys with different chemical compositions.This applies especially to refractory high-entropy alloys(RHEAs),which are difficult to synthesize and process by conventional methods.To evaluate a possible way to accelerate the process,high-throughput laser metal deposition was used in this work to prepare a quinary RHEA,TiZrNbHfTa,as well as its quaternary and ternary subsystems by in-situ alloying of elemental powders.Compositionally graded variants of the quinary RHEA were also analyzed.Our results show that the influence of various parameters such as powder shape and purity,alloy composition,and especially the solidification range,on the processability,microstructure,porosity,and mechanical properties can be investigated rapidly.The strength of these alloys was mainly affected by the oxygen and nitrogen contents of the starting powders,while substitutional solid solution strengthening played a minor role.

Effect of Mn and Ni on Microstructure and Impact Toughness of Submerged Arc Weld Metals

The influences of Mn and Ni contents on the impact toughness and microstructure in the weld metals of high strength low alloy steels were studied. The objective of this study was to determine the optimum composition ranges of Mn and Ni to develop welding consumables with better resistance to cold cracking. The results indicated that Mn and Ni had considerable effect on the microstructure of weld metal, and both Mn and Ni promoted acicular ferrite at the expense of proeutectoid ferrite and ferrite side plates. Varying Ni content influenced the Charpy impact energy, the extent of which depended on Mn content. Based on the properties and impact resistance, the optimum levels of Mn and Ni were suggested to be 0.6%—0.9%,, and 2.5%—3.5%, respectively. Additions beyond this limit promoted the formation of segregation structures and other microstructural features, which may be detrimental to weld metal toughness.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Growth and Characterization of Doped CeO_2 Buffers on Ni-W Substrates for Coated Conductors Using Metal Organic Deposition Method

CeO2 and Ce0.8M0.2O2-d films （M = Mn, Y, Gd, Sm, Nd and La） with （00l） preferred orientation have been prepared on biaxially textured Ni-W substrates by metal organic decomposition （MOD） method. The factors influencing the formation of cracks on the surface of these CeO2 and doped CeO2 films on Ni-W substrates were explored by X-ray diffraction （XRD）, scanning electron microscopy （SEM） analysis, atomic force microscopy （AFM） and differential scanning calorimetry （DSC）. The results indicate that many factors, such as the change of the ionic radii of doping cations, the transformation of crystal structure and the formation of oxygen vacancies in lattices at high annealing temperature, may be related to the formation of cracks on the surface of these films. However, the crack formation shows no dependence on the crystal lattice mismatch degree of the films with Ni-W substrates. Moreover, the suppression of surface cracks is related to the change of intrinsic elasticity of CeO2 film with doping of cations with a larger radius. SEM and AFM investigations of Ce0.8M0.2O2-d （M = Y, Gd, Sm, Nd and La） films reveal the dense, smooth and crack-free microstructure, and their lattice parameters match well with that of YBCO, illuminating that they are potentially suitable to be as buffer layer, especially as cap layer in multi-layer architecture of buffer layer for coated conductors.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As（001） substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition（LP-MOCVD） system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum（358 arc sec） of the（004） ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Effect of Powder Particle Size on the Fabrication of Ti-6Al-4V Using Direct Laser Metal Deposition from Elemental Powder Mixture

Direct LMD （laser metal deposition） was used to fabricate thin-wall Ti-6Al-4V using the powder mixture of Ti-6 wt.%Al-4 wt.%V. SEM （scanning electron microscopy）, OM （optical microscopy） and EDS （energy dispersive spectroscopy） were employed to examine the chemical composition and microstructure of the as-deposited sections. Vickers hardness tests were then applied to characterize the mechanical properties of the deposit samples which were fabricated using pre-mixed elemental powders. The EDS line scans indicated that the chemical composition of the samples was homogenous across the deposit. After significant analysis, some differences were observed among two sets of deposit samples which varied in the particle size of the mixing Ti-6wt.%Al-4wt.%V powder. It could be found that the set with similar particle number for Ti, Al and V powder made composition much more stable and could easily get industry qualified Ti-6Al-4V components.

Effects of specific surface area of metallic nickel particles on carbon deposition kinetics

Carbon deposition on nickel powders in methane involves three stages in different reaction temperature ranges. Temperature programing oxidation test and Raman spectrum results indicated the formation of complex and ordered carbon structures at high deposition temperatures. The values of I（D）/I（G） of the deposited carbon reached 1.86, 1.30, and 1.22 in the first, second, and third stages, respectively. The structure of carbon in the second stage was similar to that in the third stage. Carbon deposited in the first stage rarely contained homogeneous pyrolytic deposit layers. A kinetic model was developed to analyze the carbon deposition behavior in the first stage. The rate-determining step of the first stage is supposed to be interfacial reaction. Based on the investigation of carbon deposition kinetics on nickel powders from different resources, carbon deposition rate is suggested to have a linear relation with the square of specific surface area of nickel particles.

Formation of Ultrafine Metal Particles and Metal Oxide Precursor on Anodized Al by Electrolysis Deposition

Nickel was deposited by ac electrolysis deposition in the pores of the porous oxide film of Al produced by anodizing in phosphoric acid. Ultrafine rod-shaped Ni particles were formed in the pores. At the same time a film of Ni oxide precursor was developed on the surface of the porous oxide film. The Ni particles and the Ni oxide precursor were examined by SEM, TEM and X-ray diffraction. The thickness of the barrier layer of the porous oxide film was thin and it attributed to the formation of the metal particles, while the formation of the oxide precursor was associated with the surface pits which were developed in the pretreatment of Al.

Preparation and electrochemical lithium storage performance of porous silicon microsphere composite with metal modification and carbon coating

This work adopts a multi⁃step etching⁃heat treatment strategy to prepare porous silicon microsphere com⁃posite with Sb⁃Sn surface modification and carbon coating(pSi/Sb⁃Sn@C),using industrial grade SiAl alloy micro⁃spheres as a precursor.pSi/Sb⁃Sn@C had a 3D structure with bimetallic(Sb⁃Sn)modified porous silicon micro⁃spheres(pSi/Sb⁃Sn)as the core and carbon coating as the shell.Carbon shells can improve the electronic conductivi⁃ty and mechanical stability of porous silicon microspheres,which is beneficial for obtaining a stable solid electrolyte interface(SEI)film.The 3D porous core promotes the diffusion of lithium ions,increases the intercalation/delithia⁃tion active sites,and buffers the volume expansion during the intercalation process.The introduction of active met⁃als(Sb⁃Sn)can improve the conductivity of the composite and contribute to a certain amount of lithium storage ca⁃pacity.Due to its unique composition and microstructure,pSi/Sb⁃Sn@C showed a reversible capacity of 1247.4 mAh·g^(-1) after 300 charge/discharge cycles at a current density of 1.0 A·g^(-1),demonstrating excellent rate lithium storage performance and enhanced electrochemical cycling stability.

Microstructure transformations and improving wear resistance of austenitic stainless steel additively fabricated by arc-based DED process

In this study, austenitic stainless steel(ASS) was additively fabricated by an arc-based direct energy deposition(DED) technique. Macrostructure, microstructure, mechanical characteristics at different spatial orientations(0°, 90°, and 45°), and wear characteristics were evaluated at the deposited structure top, middle, and bottom regions. Results show that austenite(γ) and delta-ferrite(δ) phases make up most of the microstructure of additively fabricated SS316LSi steel. Within γ matrix, δ phase is dispersed both(within and along) grain boundaries, exhibiting a fine vermicular morphology. The bottom, middle,and top regions of WAAM deposited ASS exhibit similar values to those of wrought SS316L in the tensile and impact test findings. Notably, a drop in hardness values is observed as build height increases. During SEM examinations of fractured surfaces from tensile specimen, closed dimples were observed, indicating good ductility of as-built structure. Wear test findings show signs of mild oxidation and usual adhesive wear. By depositing a mechanically mixed composite layer, an increase in the oxidation percentage was discovered to facilitate healing of worn surfaces. The findings of this study will help in design, production and renovation of products/components that are prone to wear. WAAM-deposited ASS has remarkable strength and ability to withstand impacts;it can be used in the production of armour plates for defence applications, mainly military vehicles and aircraft.

A review on additive/subtractive hybrid manufacturing of directed energy deposition(DED)process

Additive manufacturing(AM)processes are reliable techniques to build highly complex metallic parts.Direct energy deposition(DED)is one of the most common technologies to 3D print metal alloys.Despite a wide range of literature that has discussed the ability of DED in metal printing,weak binding,poor accuracy,and rough surface still exist in final products.Thus,limitations in 3D printing of metal powder and wire indicate post-processing techniques required to achieve high quality in both mechanical properties and surface quality.Therefore,hybrid manufacturing(HM),specifically additive/subtractive hybrid manufacturing(ASHM)of DED has been proposed to enhance product quality.ASHM is a capable process that combines two technologies with 3-axis or multi-axis machines.Different methods have been suggested to increase the accuracy of machines to find better quality and microstructure.In contrast,drawbacks in ASHM still exist such as limitations in existing reliable materials and poor accuracy in machine coordination to avoid collision in the multi-axes machine.It should be noted that there is no review work with focuses on both DED and hybridization of DED processes.Thus,in this review work,a unique study of DED in comparison to ASHM as well as novel techniques are discussed with the objective of showing the capabilities of each process and the benefits of using them for different applications.Finally,new gaps are discussed in ASHM to enhance the layer bonding and surface quality with the processes'effects on microstructures and performance.

The Ore-forming Mechanism of the Jiajika Pegmatite-Type Rare Metal Deposit in Western Sichuan Province:Evidence from Isotope Dating

Granitic pegmatites are commonly thought to form by fractional crystallization or by liquid immiscibility of granitic magma; however, these proposals are based mainly on analyses of fluid and melt inclusions. Here, we use the Jiajika pegmatite deposit, the largest spodumene deposit in Asia, as a case study to investigate ore forming processes using isotope dating. Dating of a single granite sample from the Jiajika deposit using multiple methods gave a zircon U-Pb SHRIMP age of 208.4 ~ 3.9 Ma, an 4~Ar/39Ar age for muscovite of 182.9 ~ 1.7 Ma, and an 4~Ar/39Ar age for biotite of 169.9 ＋ 1.6 Ma. Based on these dating results and the 4~Ar/39Ar age of muscovite from the Jiajika pegmatite, a temperature-time cooling track for the Jiajika granite was constructed using closure temperatures of the different isotope systems. This track indicates that the granite cooled over ^-40 m. y., with segregation of the pegmatite fluid from the granitic magma at a temperature of ~700~C. This result suggests that the Jiajika pegmatite formed not by fractional crystallization, but by segregation of an immiscible liquid from the granitic magma. When compared with fractional crystallization, the relatively early timing of segregation of an immiscible liquid from a granitic magma can prevent the precipitation of ore-forming elements during crystallization, and suggests that liquid immiscibility could be an important ore-forming process for rare metal pegmatities. We also conclude that isotope dating is a method that can potentially be used to determine the dominant ore-forming processes that occurred during the formation of granite-related ore deposits, and suggest that this method can be employed to determine the formation history of the W-Sn ore deposits found elsewhere within the Nanling Metallogenic Belt.