Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Low-noise and low-power pixel sensor chip for gas pixel detectors

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

Flexibility potential of Cs_(2)BX_(6)(B=Hf,Sn,Pt,Zr,Ti;X=I,Br,Cl)with application in photovoltaic devices and radiation detectors

As interest in double perovskites is growing,especially in applications like photovoltaic devices,understanding their mechanical properties is vital for device durability.Despite extensive exploration of structure and optical properties,research on mechanical aspects is limited.This article builds a vacancyordered double perovskite model,employing first-principles calculations to analyze mechanical,bonding,electronic,and optical properties.Results show Cs_(2)Hfl_(6),Cs_(2)SnBr_(6),Cs_(2)SnI_(6),and Cs_(2)PtBr_(6)have Young's moduli below 13 GPa,indicating flexibility.Geometric parameters explain flexibility variations with the changes of B and X site composition.Bonding characteristic exploration reveals the influence of B and X site electronegativity on mechanical strength.Cs_(2)SnBr_(6)and Cs_(2)PtBr_(6)are suitable for solar cells,while Cs_(2)HfI_(6)and Cs_(2)TiCl_(6)show potential for semi-transparent solar cells.Optical property calculations highlight the high light absorption coefficients of up to 3.5×10^(5) cm^(-1)for Cs_(2)HfI_(6)and Cs_(2)TiCl_(6).Solar cell simulation shows Cs_(2)PtBr_(6)achieves 22.4%of conversion effciency.Cs_(2)ZrCl_(6)holds promise for ionizing radiation detection with its 3.68 eV bandgap and high absorption coefficient.Vacancy-ordered double perovskites offer superior flexibility,providing valuable insights for designing stable and flexible devices.This understanding enhances the development of functional devices based on these perovskites,especially for applications requiring high stability and flexibility.

Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance evaluation.When the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and detectors.This study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam energies.Simulations were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope layouts.The simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be ignored.Compared with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

Countermeasure against blinding attack for single-photon detectors in quantum key distribution

Quantum key distribution(QKD),rooted in quantum mechanics,offers information-theoretic security.However,practi-cal systems open security threats due to imperfections,notably bright-light blinding attacks targeting single-photon detectors.Here,we propose a concise,robust defense strategy for protecting single-photon detectors in QKD systems against blinding attacks.Our strategy uses a dual approach:detecting the bias current of the avalanche photodiode(APD)to defend against con-tinuous-wave blinding attacks,and monitoring the avalanche amplitude to protect against pulsed blinding attacks.By integrat-ing these two branches,the proposed solution effectively identifies and mitigates a wide range of bright light injection attempts,significantly enhancing the resilience of QKD systems against various bright-light blinding attacks.This method forti-fies the safeguards of quantum communications and offers a crucial contribution to the field of quantum information security.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.

FPGA implementation of 500-MHz high-count-rate high-time-resolution real-time digital neutron-gamma discrimination for fast liquid detectors

Fast neutron flux measurements with high count rates and high time resolution have important applications in equipment such as tokamaks.In this study,real-time neutron and gamma discrimination was implemented on a self-developed 500-Msps,12-bit digitizer,and the neutron and gamma spectra were calculated directly on an FPGA.A fast neutron flux measurement system with BC-501A and EJ-309 liquid scintillator detectors was developed and a fast neutron measurement experiment was successfully performed on the HL-2 M tokamak at the Southwestern Institute of Physics,China.The experimental results demonstrated that the system obtained the neutron and gamma spectra with a time accuracy of 1 ms.At count rates of up to 1 Mcps,the figure of merit was greater than 1.05 for energies between 50 keV and 2.8 MeV.

In-flight Energy Calibration of the GECAM Gamma-ray Detectors

The Gravitational wave high-energy Electromagnetic Counterpart All-sky Monitor(GECAM)mission is designed to monitor the Gamma-Ray Bursts(GRBs)associated with gravitational waves and other high-energy transient sources.The mission consists of two microsatellites which are planned to operate at the opposite sides of the Earth.Each GECAM satellite could detect and localize GRBs in about 8 keV-5 MeV with its 25 Gamma-Ray Detectors(GRDs).In this work,we report the in-flight energy calibration of GRDs using the characteristic gamma-ray lines in the background spectra,and show their performance evolution during the commissioning phase.Besides,a preliminary cross-calibration of energy response with Fermi GBM data is also presented,validating the energy response of GRDs.

深层肌肉刺激与肌电生物反馈干预脑卒中后患者小腿三头肌痉挛和步态的改变

背景:深层肌肉刺激疗法具有松解粘连、缓解痉挛、改善和恢复肌肉顺应性和弹性等作用;肌电生物反馈疗法能有效促进神经恢复和改善下肢运动功能和步态。目的:利用数字化肌肉检测仪和三维步态分析仪等手段综合评估深层肌肉刺激联合肌电生物反馈对脑卒中后小腿三头肌痉挛及步态改变的影响。方法:选取2020年10月至2023年10月在广东药科大学附属第一医院康复科住院且符合纳入标准的患者72例,随机分为对照组和联合组,每组36例。对照组接受常规康复治疗+肌电生物反馈+假性深层肌肉刺激,联合组在对照组基础上增加真性深层肌肉刺激治疗,5次/周,连续4周。统计分析两组治疗前、后患侧腓肠肌内外侧振荡频率和动态刚度、踝背屈主动关节活动度、胫骨前肌肌电信号、下肢Fugl-Meyer评分量表和三维步态分析相关参数。结果与结论:①两组患者治疗后患侧腓肠肌内外侧的振荡频率和动态刚度值较治疗前明显降低(P<0.05),联合组较对照组降低更明显(P<0.05);②两组患者治疗后踝背屈主动活动度、胫骨前肌肌电信号和下肢Fugl-Meyer量表评分较治疗前明显增大或提高(P<0.05),联合组较对照组增大或提高更明显(P<0.05);③两组患者步速、步频、步幅均较治疗前明显增大(P<0.05),联合组较对照组增大更明显(P<0.05);健患侧支撑相百分比时间较治疗前降低(P<0.05),联合组较对照组降低更明显(P<0.05);④除健侧支撑百分比治疗前后变化量两组间比较差异无显著性意义(P>0.05)外,其余指标治疗前后的变化量联合组均较对照组效果更明显(P<0.05);⑤结果说明,深层肌肉刺激治疗仪联合肌电生物反馈短期内能有效缓解脑卒中后小腿三头肌痉挛、改善踝背屈功能和提高下肢运动功能及改善步态,治疗效果显著。

MARIE:One-Stage Object Detection Mechanism for Real-Time Identifying of Firearms

Security and safety remain paramount concerns for both governments and individuals worldwide.In today’s context,the frequency of crimes and terrorist attacks is alarmingly increasing,becoming increasingly intolerable to society.Consequently,there is a pressing need for swift identification of potential threats to preemptively alert law enforcement and security forces,thereby preventing potential attacks or violent incidents.Recent advancements in big data analytics and deep learning have significantly enhanced the capabilities of computer vision in object detection,particularly in identifying firearms.This paper introduces a novel automatic firearm detection surveillance system,utilizing a one-stage detection approach named MARIE(Mechanism for Realtime Identification of Firearms).MARIE incorporates the Single Shot Multibox Detector(SSD)model,which has been specifically optimized to balance the speed-accuracy trade-off critical in firearm detection applications.The SSD model was further refined by integrating MobileNetV2 and InceptionV2 architectures for superior feature extraction capabilities.The experimental results demonstrate that this modified SSD configuration provides highly satisfactory performance,surpassing existing methods trained on the same dataset in terms of the critical speedaccuracy trade-off.Through these innovations,MARIE sets a new standard in surveillance technology,offering a robust solution to enhance public safety effectively.

Role of photon-counting computed tomography in pediatric cardiovascular imaging

Photon-counting computed tomography(PCCT)represents a significant advancement in pediatric cardiovascular imaging.Traditional CT systems employ energy-integrating detectors that convert X-ray photons into visible light,whereas PCCT utilizes photon-counting detectors that directly transform X-ray photons into electric signals.This direct conversion allows photon-counting detectors to sort photons into discrete energy levels,thereby enhancing image quality through superior noise reduction,improved spatial and contrast resolution,and reduced artifacts.In pediatric applications,PCCT offers substantial benefits,including lower radiation doses,which may help reduce the risk of malignancy in pediatric patients,with perhaps greater potential to benefit those with repeated exposure from a young age.Enhanced spatial resolution facilitates better visualization of small structures,vital for diagnosing congenital heart defects.Additionally,PCCT’s spectral capabilities improve tissue characterization and enable the creation of virtual monoenergetic images,which enhance soft-tissue contrast and potentially reduce contrast media doses.Initial clinical results indicate that PCCT provides superior image quality and diagnostic accuracy compared to conven-tional CT,particularly in challenging pediatric cardiovascular cases.As PCCT technology matures,further research and standardized protocols will be essential to fully integrate it into pediatric imaging practices,ensuring optimized diagnostic outcomes and patient safety.

以地理模拟与优化系统(GeoSOS)模型进行的升金湖湿地景观模拟与演变预测

以升金湖国际重要湿地为研究区,根据2010—2020年Landsat系列遥感影像,分析该湿地景观变化特征及驱动因素,利用地理模拟与优化系统(GeoSOS)模型对2025年该湿地在不同发展情景(自然情景、耕地保护情景和生态保护情景)进行景观模拟与预测,探究该湿地景观的未来演变趋势,并提出相关规划建议。研究表明:(1)2010—2020年间,草地面积略微减少,滩涂和水体面积有部分增加,景观结构趋于复杂化,主要受到年降水(自然因素)及GDP(人文因素)的影响;(2)GeoSOS模型中,人工神经网络-元胞自动机(ANN-CA)算法的模拟精度最高,总体精度达到63.28%,Kappa系数达到0.503,品质因数(FoM)达到0.122,适用于湖泊湿地景观模拟与预测;(3)根据2025年不同发展情景湿地景观预测结果,采取生态保护策略最能有效保障自然湿地面积,维持湿地景观的多样性与稳定性。

基于InVEST&GEO-detectors模型的会仙湿地生境质量变化及影响因素研究

喀斯特湿地是广泛分布在喀斯特地区的一种特殊的湿地类型,其生态地位举足轻重,探索喀斯特湿地生境质量变化的影响因素对喀斯特地区生态建设具有重要的意义。本文基于会仙湿地保护区2000和2020年的土地利用数据,通过InVEST模型评估会仙湿地保护区的生境质量,利用地理探测器探测影响会仙湿地保护区生境质量变化的自然和人为因素。研究结果表明:1)研究区2000至2020年建设用地明显扩张,草地和水体显著减少;2)会仙湿地保护区生境质量总体呈现下降的趋势,生境退化度有所上升,生境质量较差的区域主要集中在研究区的北部、中部和东北部;3)地理探测器识别出会仙湿地保护区生境质量空间变化受自然和人为因子的综合作用,主导影响因子是GDP(q为0.135),其次为夜间灯光指数(DMSP)(q为0.053);交互作用探测结果表明,各因子对生境质量影响呈现出双因子增强效果。研究结果有助于揭示会仙湿地保护区生境质量的时空演变过程,可针对会仙湿地生态建设的问题提出可行的应对策略。

Ohmic Contacts to n-Type Al_(0.6)Ga_(0.4)N for Solar-Blind Detectors

We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.

Development of small pixel HgCdTe infrared detectors

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition

Chemical vapor deposition(CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond(SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence(CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency(CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

Event vertex and time reconstruction in large-volume liquid scintillator detectors

Large-volume liquid scintillator detectors with ultra-low background levels have been widely used to study neutrino physics and search for dark matter.Event vertex and event time are not only useful for event selection but also essential for the reconstruction of event energy.In this study,four event vertex and event time reconstruction algorithms using charge and time information collected by photomultiplier tubes were analyzed comprehensively.The effects of photomultiplier tube properties were also investigated.The results indicate that the transit time spread is the main effect degrading the vertex reconstruction,while the effect of dark noise is limited.In addition,when the event is close to the detector boundary,the charge information provides better performance for vertex reconstruction than the time information.

Development of gated fiber detectors for laser-induced strong electromagnetic pulse environments

With the development of laser technologies,nuclear reactions can happen in high-temperature plasma environments induced by lasers and have attracted a lot of attention from different physical disciplines.However,studies on nuclear reactions in plasma are still limited by detecting technologies.This is mainly due to the fact that extremely high electromagnetic pulses(EMPs)can also be induced when high-intensity lasers hit targets to induce plasma,and then cause dysfunction of many types of traditional detectors.Therefore,new particle detecting technologies are highly needed.In this paper,we report a recently developed gated fiber detector which can be used in harsh EMP environments.In this prototype detector,scintillating photons are coupled by fiber and then transferred to a gated photomultiplier tube which is located far away from the EMP source and shielded well.With those measures,the EMPs can be avoided which may result that the device has the capability to identify a single event of nuclear reaction products generated in laser-induced plasma from noise EMP backgrounds.This new type of detector can be widely used as a time-of-flight(TOF)detector in high-intensity laser nuclear physics experiments for detecting neutrons,photons,and other charged particles.