A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabric...A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.展开更多
This paper aimed at extracting optimal structural parameters for Love wave device with structure of multi-waveguides to improve its temperature stability. The theoretical model dealing with the Love wave propagation i...This paper aimed at extracting optimal structural parameters for Love wave device with structure of multi-waveguides to improve its temperature stability. The theoretical model dealing with the Love wave propagation in multi-waveguides was established first, the dispersion characteristic is depicted by the acoustic propagation theory of stratified media and boundary conditions. Combing with the dispersion characteristics and Tomar＇s method, the optimal structural parameters for the Love wave device with zero temperature coefficient were extracted, and confirmed by the following experimental results. Excellent temperature coefficient of the Love wave device with SU-8/SiO2 on ST-90°X quartz substrate was evaluated experimentally as only 2.16 ppm/℃, which agrees well with the calculated results. The optimized Love wave device is very promising in gas sensing application.展开更多
文摘A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.
基金supported by the National Nature Science Foundation of China(11074268,10834010)
文摘This paper aimed at extracting optimal structural parameters for Love wave device with structure of multi-waveguides to improve its temperature stability. The theoretical model dealing with the Love wave propagation in multi-waveguides was established first, the dispersion characteristic is depicted by the acoustic propagation theory of stratified media and boundary conditions. Combing with the dispersion characteristics and Tomar＇s method, the optimal structural parameters for the Love wave device with zero temperature coefficient were extracted, and confirmed by the following experimental results. Excellent temperature coefficient of the Love wave device with SU-8/SiO2 on ST-90°X quartz substrate was evaluated experimentally as only 2.16 ppm/℃, which agrees well with the calculated results. The optimized Love wave device is very promising in gas sensing application.
