Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication

AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.

Fabrication and characterization of superconducting multiqubit device with niobium base layer

Superconducting transmon qubits are the leading platform in solid-state quantum computing and quantum simulation applications.In this work,we develop a fabrication process for the transmon multiqubit device with a niobium base layer,shadow-evaporated Josephson junctions,and airbridges across the qubit control lines to suppress crosstalk.Our results show that these multiqubit devices have well-characterized readout resonators,and that the energy relaxation and Ramsey(spin-echo)dephasing times are up to∼40µs and 14(47)µs,respectively.We perform single-qubit gate operations that demonstrate a maximum gate fidelity of 99.97%.In addition,two-qubit vacuum Rabi oscillations are measured to evaluate the coupling strength between qubits,and the crosstalk among qubits is found to be less than 1%with the fabricated airbridges.Further improvements in qubit coherence performance using this fabrication process are also discussed.

Effect of Device Fabrication Conditions on Photovoltaic Performance of Polymer Solar Cells Based on Poly（3-hexylthiophene） and Indene-CT0 Bisadduct

Effect of the device fabrication conditions on photovoltaic performance of the polymer solar cells based on poly（3-hexylthiophene） （P3HT） as donor and indene-C70 bisadduct （IC70BA） as acceptor was studied systematically. The device fabrication conditions we studied include pre-thermal annealing temperature, active layer thickness, and the P3HT ： IC70BA weight ratios. For devices with a 188-nm-thick active layer of P3HT ： ICToBA （1 ： 1, w ＇ w） blend film and pre-thermal annealing at 150 ℃C for 10 rain, maximum power conversion efficiency （PCE） reached 5.82% with Voc of 0.81 V, Isc of 11.37 mA/cm2, and FF of 64.0% under the illumination of AM1.5G, 100 mW/cm2.

Femtosecond laser fabrication of nanograting-based distributed fiber sensors for extreme environmental applications

The femtosecond laser has emerged as a powerful tool for micro-and nanoscale device fabrication. Through nonlinear ionization processes, nanometer-sized material modifications can be inscribed in transparent materials for device fabrication. This paper describes femtosecond precision inscription of nanograting in silica fiber cores to form both distributed and point fiber sensors for sensing applications in extreme environmental conditions. Through the use of scanning electron microscope imaging and laser processing optimization,high-temperature stable, Type II femtosecond laser modifications were continuously inscribed,point by point, with only an insertion loss at 1 d B m~(-1) or 0.001 d B per point sensor device.High-temperature performance of fiber sensors was tested at 1000℃, which showed a temperature fluctuation of ±5.5℃ over 5 days. The low laser-induced insertion loss in optical fibers enabled the fabrication of a 1.4 m, radiation-resilient distributed fiber sensor. The in-pile testing of the distributed fiber sensor further showed that fiber sensors can execute stable and distributed temperature measurements in extreme radiation environments. Overall, this paper demonstrates that femtosecond-laser-fabricated fiber sensors are suitable measurement devices for applications in extreme environments.

Fabrication and characterization of novel high-speed In GaAs/InP uni-traveling-carrier photodetector for high responsivity

A top-illuminated circular mesa uni-traveling-carrier photodetector（UTC-PD） is proposed in this paper. By employing Gaussian graded doping in In Ga As absorption layer and In P depleted layer, the responsivity and high speed response characteristics of the device are optimized simultaneously. The responsivity up to 1.071 A/W（the external quantum efficiency of 86%） is obtained at 1550 nm with a 40-μm diameter device under 10-V reverse bias condition. Meanwhile, the dark current of 7.874 n A and the 3-d B bandwidth of 11 GHz are obtained with the same device at a reverse bias voltage of3 V.

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.

Fabrication techniques and applications of flexible graphene-based electronic devices

In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future.

Fabrication of stable organometallic halide perovskite NWs based optoelectronic devices

Organometallic halide perovskite materials have triggered global attention in recent years due to their exciting and optimistic high performance energy conversion properties(high luminescence efficiency and tremendous optical absorption ability[1,2]).These interesting photovoltaic properties together make them a promising candidate for high performance optoelectronic

Recent development and application of thin-film thermoelectric cooler

Recently,the performance and fabrication of thin-ilm thermoeletric materials have been jargely enhanced.Based on this enhancement,the thin-film thermoelectric cooler(TEC)is becoming a research hot topic,due to its high cooling flux and microchip level size.To fulfill a thin-film TEC,interfacial problems are unavoidable,as they may largely reduce the properties of a thin-film TEC.Moreover,the architecture of a thin-film TEC should also be properly designed.In this review,we introduced the enhancement of thermoelectric properties of(Bi,Sb)2(Te,Se)3 solid solution materials by chemical vapor deposition,physical vapor deposition and electro-deposition.Then,the interfacial problems,including contact resistance,interfacial diffusion and thermal contact resistance,were discussed.Furthermore,the design,fabrication,as well as the performance of thin-film TECs were summarized.

Liquid deposition photolithography for submicrometer resolution three-dimensional index structuring with large throughput

Photonic devices increasingly require three-dimensional control of refractive index,but existing fabrication methods such as femtosecond micromachining,multilayer lithography and bulk diffusion can only address a select scale range,are often limited in complexity or thickness and have low throughput.We introduce a new fabrication method and polymeric material that can efficiently create mm^(3) optical devices with programmable,gradient index of refraction with arbitrary feature size.Index contrast of 0.1 is demonstrated,which is 100 times larger than femtosecond micromachining,and 20 times larger than commercial holographic photopolymers.This is achieved by repetitive microfluidic layering of a self-developing photopolymer structured by projection lithography.The process has the unusual property that total fabrication time for a fixed thickness decreases with the number of layers,enabling fabrication 10^(5) faster than femtosecond micromachining.We demonstrate the process by sequentially writing 100 layers to fabricate a mm thick waveguide array.

Monitoring magnesium degradation using microdialysis and fabric-based biosensors

This paper describes the development of a monitoring system capable of detecting the concentration of magnesium ions(Mg^(2+)) released during the degradation of magnesium implants. The system consists of a microdialysis probe that samples fluid adjacent to the implant and a catalytic biosensor specific to Mg^(2+)ions. The biosensor was fabricated on a cotton fabric platform, in which a mixture of glycerol kinase and glycerol-3-phosphate oxidase enzymes was immobilized on the fabric device via a simple matrix entrapment technique of the cotton fibers. Pure magnesium was used as the implant material. Subsequently, the concentration of ions released from the degradation of the magnesium specimen in Ringer's solution was evaluated using cyclic voltammetry technique. The device demonstrated a pseudo-linear response from 0.005 to 0.1 mmol L^(-1) with a slope of 67.48 μA mmol^(-1) L. Detectable interfering species were lesser than 1%indicating a high selectivity of the fabric device. Furthermore,the device requires only 3 μL of fluid sample to complete the measurement compared to spectroscopic method(±50 μL),hence providing a higher temporal resolution and reduced sampling time. The system could potentially provide a real time assessment of the degradation behavior, a new studied aspect in biodegradable metals research.